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Artigo de periodico
Electroluminescence and electric current response spectroscopy applied to the characterization of polymer light-emitting electrochemical cells (2012)
Gozzi, Giovani; Faria, Roberto Mendonça ; Santos, Lucas Fugikawa
Fonte: Applied Physics Letters. Unidade: IFSC
Assuntos: LUMINESCÊNCIA, ESPECTROSCOPIA, CARGA ELÉTRICA, ELETROQUÍMICA
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ABNT
GOZZI, Giovani e FARIA, Roberto Mendonça e SANTOS, Lucas Fugikawa. Electroluminescence and electric current response spectroscopy applied to the characterization of polymer light-emitting electrochemical cells. Applied Physics Letters, v. 101, n. 11, p. 113305-1-113305-5, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4752438. Acesso em: 05 nov. 2025.
APA
Gozzi, G., Faria, R. M., & Santos, L. F. (2012). Electroluminescence and electric current response spectroscopy applied to the characterization of polymer light-emitting electrochemical cells. Applied Physics Letters, 101( 11), 113305-1-113305-5. doi:10.1063/1.4752438
NLM
Gozzi G, Faria RM, Santos LF. Electroluminescence and electric current response spectroscopy applied to the characterization of polymer light-emitting electrochemical cells [Internet]. Applied Physics Letters. 2012 ; 101( 11): 113305-1-113305-5.[citado 2025 nov. 05 ] Available from: https://doi.org/10.1063/1.4752438
Vancouver
Gozzi G, Faria RM, Santos LF. Electroluminescence and electric current response spectroscopy applied to the characterization of polymer light-emitting electrochemical cells [Internet]. Applied Physics Letters. 2012 ; 101( 11): 113305-1-113305-5.[citado 2025 nov. 05 ] Available from: https://doi.org/10.1063/1.4752438
Artigo de periodico
Local structure around Fe ions on multiferroic Pb('Fe IND. 1/2''Nb IND. 1/2')'O IND. 3' ceramics probed by x-ray absorption spectroscopy (2012)
Mesquita, A.; Fraygola, B. M.; Mastelaro, Valmor Roberto ; Eiras, J. A.
Fonte: Applied Physics Letters. Unidade: IFSC
Assuntos: MATERIAIS CERÂMICOS, ESPECTROSCOPIA DE RAIO X, FERROELETRICIDADE
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ABNT
MESQUITA, A. et al. Local structure around Fe ions on multiferroic Pb('Fe IND. 1/2''Nb IND. 1/2')'O IND. 3' ceramics probed by x-ray absorption spectroscopy. Applied Physics Letters, v. 100, n. 17, p. 172907-1-172907-4, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4709490. Acesso em: 05 nov. 2025.
APA
Mesquita, A., Fraygola, B. M., Mastelaro, V. R., & Eiras, J. A. (2012). Local structure around Fe ions on multiferroic Pb('Fe IND. 1/2''Nb IND. 1/2')'O IND. 3' ceramics probed by x-ray absorption spectroscopy. Applied Physics Letters, 100( 17), 172907-1-172907-4. doi:10.1063/1.4709490
NLM
Mesquita A, Fraygola BM, Mastelaro VR, Eiras JA. Local structure around Fe ions on multiferroic Pb('Fe IND. 1/2''Nb IND. 1/2')'O IND. 3' ceramics probed by x-ray absorption spectroscopy [Internet]. Applied Physics Letters. 2012 ; 100( 17): 172907-1-172907-4.[citado 2025 nov. 05 ] Available from: https://doi.org/10.1063/1.4709490
Vancouver
Mesquita A, Fraygola BM, Mastelaro VR, Eiras JA. Local structure around Fe ions on multiferroic Pb('Fe IND. 1/2''Nb IND. 1/2')'O IND. 3' ceramics probed by x-ray absorption spectroscopy [Internet]. Applied Physics Letters. 2012 ; 100( 17): 172907-1-172907-4.[citado 2025 nov. 05 ] Available from: https://doi.org/10.1063/1.4709490
Artigo de periodico
Low cost ion implantation technique (2012)
Salvadori, M C ; Teixeira, F S ; Sgubin, L G ; Araújo, W W R ; Spirin, R E; Oks, E M; Yu, K M; Brown, I G
Fonte: Applied Physics Letters. Unidade: IF
Assunto: FILMES FINOS
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ABNT
SALVADORI, M C et al. Low cost ion implantation technique. Applied Physics Letters, v. 101, n. 22, p. 224104/1-224104/4, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4768699. Acesso em: 05 nov. 2025.
APA
Salvadori, M. C., Teixeira, F. S., Sgubin, L. G., Araújo, W. W. R., Spirin, R. E., Oks, E. M., et al. (2012). Low cost ion implantation technique. Applied Physics Letters, 101( 22), 224104/1-224104/4. doi:10.1063/1.4768699
NLM
Salvadori MC, Teixeira FS, Sgubin LG, Araújo WWR, Spirin RE, Oks EM, Yu KM, Brown IG. Low cost ion implantation technique [Internet]. Applied Physics Letters. 2012 ;101( 22): 224104/1-224104/4.[citado 2025 nov. 05 ] Available from: https://doi.org/10.1063/1.4768699
Vancouver
Salvadori MC, Teixeira FS, Sgubin LG, Araújo WWR, Spirin RE, Oks EM, Yu KM, Brown IG. Low cost ion implantation technique [Internet]. Applied Physics Letters. 2012 ;101( 22): 224104/1-224104/4.[citado 2025 nov. 05 ] Available from: https://doi.org/10.1063/1.4768699
Artigo de periodico
Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal (2012)
Kellermann, Guinther; Montoro, Luciano A; Giovanetti, Lisandro J; Claro, Paula C dos Santos; Zhang, Liang; Ramirez, Antonio J; Requejo, Félix G; Craievich, Aldo Felix
Fonte: Applied Physics Letters. Unidade: IF
Assuntos: NANOPARTÍCULAS, FILMES FINOS
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ABNT
KELLERMANN, Guinther et al. Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal. Applied Physics Letters, v. 100, n. 6, p. 063116/1-063116/5, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.3683493. Acesso em: 05 nov. 2025.
APA
Kellermann, G., Montoro, L. A., Giovanetti, L. J., Claro, P. C. dos S., Zhang, L., Ramirez, A. J., et al. (2012). Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal. Applied Physics Letters, 100( 6), 063116/1-063116/5. doi:10.1063/1.3683493
NLM
Kellermann G, Montoro LA, Giovanetti LJ, Claro PC dos S, Zhang L, Ramirez AJ, Requejo FG, Craievich AF. Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal [Internet]. Applied Physics Letters. 2012 ; 100( 6): 063116/1-063116/5.[citado 2025 nov. 05 ] Available from: https://doi.org/10.1063/1.3683493
Vancouver
Kellermann G, Montoro LA, Giovanetti LJ, Claro PC dos S, Zhang L, Ramirez AJ, Requejo FG, Craievich AF. Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal [Internet]. Applied Physics Letters. 2012 ; 100( 6): 063116/1-063116/5.[citado 2025 nov. 05 ] Available from: https://doi.org/10.1063/1.3683493
Artigo de periodico
Digital magnetic heterostructures based on GaN using GGA-1/2 approach (2012)
Santos, J P T; Marques, M; Pelá, R R; Teles, L. K.; Ferreira, Luiz Guimarães
Fonte: Applied Physics Letters. Unidade: IF
Assuntos: MATERIAIS MAGNÉTICOS, FERROMAGNETISMO, SEMICONDUTORES, FILMES FINOS, NÍQUEL
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ABNT
SANTOS, J P T et al. Digital magnetic heterostructures based on GaN using GGA-1/2 approach. Applied Physics Letters, v. 101, n. 11, p. 112403, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4751285. Acesso em: 05 nov. 2025.
APA
Santos, J. P. T., Marques, M., Pelá, R. R., Teles, L. K., & Ferreira, L. G. (2012). Digital magnetic heterostructures based on GaN using GGA-1/2 approach. Applied Physics Letters, 101( 11), 112403. doi:10.1063/1.4751285
NLM
Santos JPT, Marques M, Pelá RR, Teles LK, Ferreira LG. Digital magnetic heterostructures based on GaN using GGA-1/2 approach [Internet]. Applied Physics Letters. 2012 ;101( 11): 112403.[citado 2025 nov. 05 ] Available from: https://doi.org/10.1063/1.4751285
Vancouver
Santos JPT, Marques M, Pelá RR, Teles LK, Ferreira LG. Digital magnetic heterostructures based on GaN using GGA-1/2 approach [Internet]. Applied Physics Letters. 2012 ;101( 11): 112403.[citado 2025 nov. 05 ] Available from: https://doi.org/10.1063/1.4751285
Artigo de periodico
GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations (2012)
Pela, R R; Marques, M; Ferreira, Luiz Guimarães; Furthmüller, Jurgen; Teles, L. K.
Fonte: Applied Physics Letters. Unidade: IF
Assuntos: SEMICONDUTORES, SEMICONDUTORES (PROPRIEDADES MAGNÉTICAS)
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ABNT
PELA, R R et al. GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations. Applied Physics Letters, v. 100, n. 20, p. 202408/1-202408/4, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4718602. Acesso em: 05 nov. 2025.
APA
Pela, R. R., Marques, M., Ferreira, L. G., Furthmüller, J., & Teles, L. K. (2012). GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations. Applied Physics Letters, 100( 20), 202408/1-202408/4. doi:10.1063/1.4718602
NLM
Pela RR, Marques M, Ferreira LG, Furthmüller J, Teles LK. GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations [Internet]. Applied Physics Letters. 2012 ; 100( 20): 202408/1-202408/4.[citado 2025 nov. 05 ] Available from: https://doi.org/10.1063/1.4718602
Vancouver
Pela RR, Marques M, Ferreira LG, Furthmüller J, Teles LK. GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations [Internet]. Applied Physics Letters. 2012 ; 100( 20): 202408/1-202408/4.[citado 2025 nov. 05 ] Available from: https://doi.org/10.1063/1.4718602

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