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Filtros : "Applied Physics Letters" "1994" Removido: "TERRAS RARAS" Limpar

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  • Artigo de periodico

    Single-beam time-resolved z-scan measurements of slow absorbers (1994)

    Oliveira, L. C.; Zílio, Sérgio Carlos

    Source: Applied Physics Letters. Unidade: IFSC

    Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA, MATÉRIA CONDENSADA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      OLIVEIRA, L. C. e ZÍLIO, Sérgio Carlos. Single-beam time-resolved z-scan measurements of slow absorbers. Applied Physics Letters, v. 65, n. 17, p. 2121-3, 1994Tradução . . Acesso em: 04 nov. 2025.

    • APA

      Oliveira, L. C., & Zílio, S. C. (1994). Single-beam time-resolved z-scan measurements of slow absorbers. Applied Physics Letters, 65( 17), 2121-3.

    • NLM

      Oliveira LC, Zílio SC. Single-beam time-resolved z-scan measurements of slow absorbers. Applied Physics Letters. 1994 ;65( 17): 2121-3.[citado 2025 nov. 04 ]

    • Vancouver

      Oliveira LC, Zílio SC. Single-beam time-resolved z-scan measurements of slow absorbers. Applied Physics Letters. 1994 ;65( 17): 2121-3.[citado 2025 nov. 04 ]

  • Artigo de periodico

    Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial Si/Si(Ge) (1994)

    Braga, Nelson Liebentritt de Almeida; Buczkowski, A; Kirk, H R; Rozgonyi, G A

    Source: Applied Physics Letters. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      BRAGA, Nelson Liebentritt de Almeida et al. Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial Si/Si(Ge). Applied Physics Letters, v. 64, n. 11, p. 1410-2, 1994Tradução . . Acesso em: 04 nov. 2025.

    • APA

      Braga, N. L. de A., Buczkowski, A., Kirk, H. R., & Rozgonyi, G. A. (1994). Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial Si/Si(Ge). Applied Physics Letters, 64( 11), 1410-2.

    • NLM

      Braga NL de A, Buczkowski A, Kirk HR, Rozgonyi GA. Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial Si/Si(Ge). Applied Physics Letters. 1994 ;64( 11): 1410-2.[citado 2025 nov. 04 ]

    • Vancouver

      Braga NL de A, Buczkowski A, Kirk HR, Rozgonyi GA. Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial Si/Si(Ge). Applied Physics Letters. 1994 ;64( 11): 1410-2.[citado 2025 nov. 04 ]
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