Eletronic structure of 'SI': 'O IND.4' complex as related to the thermal donors in silicon (1985)
Source: Applied Physics Letters. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOMES, V M S e LEITE, J. R. Eletronic structure of 'SI': 'O IND.4' complex as related to the thermal donors in silicon. Applied Physics Letters, v. 47, p. 824-6, 1985Tradução . . Acesso em: 04 nov. 2025.APA
Gomes, V. M. S., & Leite, J. R. (1985). Eletronic structure of 'SI': 'O IND.4' complex as related to the thermal donors in silicon. Applied Physics Letters, 47, 824-6.NLM
Gomes VMS, Leite JR. Eletronic structure of 'SI': 'O IND.4' complex as related to the thermal donors in silicon. Applied Physics Letters. 1985 ;47 824-6.[citado 2025 nov. 04 ]Vancouver
Gomes VMS, Leite JR. Eletronic structure of 'SI': 'O IND.4' complex as related to the thermal donors in silicon. Applied Physics Letters. 1985 ;47 824-6.[citado 2025 nov. 04 ]
