Fonte: Applied Physics Letters. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BRAGA, Nelson Liebentritt de Almeida et al. Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial Si/Si(Ge). Applied Physics Letters, v. 64, n. 11, p. 1410-2, 1994Tradução . . Acesso em: 03 nov. 2025.APA
Braga, N. L. de A., Buczkowski, A., Kirk, H. R., & Rozgonyi, G. A. (1994). Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial Si/Si(Ge). Applied Physics Letters, 64( 11), 1410-2.NLM
Braga NL de A, Buczkowski A, Kirk HR, Rozgonyi GA. Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial Si/Si(Ge). Applied Physics Letters. 1994 ;64( 11): 1410-2.[citado 2025 nov. 03 ]Vancouver
Braga NL de A, Buczkowski A, Kirk HR, Rozgonyi GA. Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial Si/Si(Ge). Applied Physics Letters. 1994 ;64( 11): 1410-2.[citado 2025 nov. 03 ]
