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Artigo de periodico
Revealing localized excitons in WSe2/β-Ga2O3 (2024)
Cavalini, Camila ; Rabahi, César Ricardo ; Brito, Caique Serati de ; Lee, Eunji ; Toledo, José Roberto de ; Cazetta, Felipe Faria ; Oliveira, Raphael Brenon Fernandes de ; Andrade, Marcelo Barbosa de ; Henini, Mohamed ; Zhang, Yuhao ; Kim, Jeongyong ; Barcelos, Ingrid David ; Gobato, Yara Galvão
Source: Applied Physics Letters. Unidade: IFSC
Subjects: ÓPTICA, FOTÔNICA, FOTOLUMINESCÊNCIA
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ABNT
CAVALINI, Camila et al. Revealing localized excitons in WSe2/β-Ga2O3. Applied Physics Letters, v. 124, n. 14, p. 142104-1-142104-7 + supplementary material, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0203628. Acesso em: 04 nov. 2025.
APA
Cavalini, C., Rabahi, C. R., Brito, C. S. de, Lee, E., Toledo, J. R. de, Cazetta, F. F., et al. (2024). Revealing localized excitons in WSe2/β-Ga2O3. Applied Physics Letters, 124( 14), 142104-1-142104-7 + supplementary material. doi:10.1063/5.0203628
NLM
Cavalini C, Rabahi CR, Brito CS de, Lee E, Toledo JR de, Cazetta FF, Oliveira RBF de, Andrade MB de, Henini M, Zhang Y, Kim J, Barcelos ID, Gobato YG. Revealing localized excitons in WSe2/β-Ga2O3 [Internet]. Applied Physics Letters. 2024 ; 124( 14): 142104-1-142104-7 + supplementary material.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0203628
Vancouver
Cavalini C, Rabahi CR, Brito CS de, Lee E, Toledo JR de, Cazetta FF, Oliveira RBF de, Andrade MB de, Henini M, Zhang Y, Kim J, Barcelos ID, Gobato YG. Revealing localized excitons in WSe2/β-Ga2O3 [Internet]. Applied Physics Letters. 2024 ; 124( 14): 142104-1-142104-7 + supplementary material.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0203628
Artigo de periodico
Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings (2007)
Hanke, Michael; Mazur, Yu I.; Marega Junior, Euclydes ; AbuWaar, Z. Y.; Salamo, G. J.; Schäfer, P.; Schmidbauer, M.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, ÓPTICA, MODELOS (TRANSFORMAÇÃO), DIFRAÇÃO POR RAIOS X, MAGNETISMO
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ABNT
HANKE, Michael et al. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings. Applied Physics Letters, v. 91, p. 043103-1-043103-3, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2760191. Acesso em: 04 nov. 2025.
APA
Hanke, M., Mazur, Y. I., Marega Junior, E., AbuWaar, Z. Y., Salamo, G. J., Schäfer, P., & Schmidbauer, M. (2007). Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings. Applied Physics Letters, 91, 043103-1-043103-3. doi:10.1063/1.2760191
NLM
Hanke M, Mazur YI, Marega Junior E, AbuWaar ZY, Salamo GJ, Schäfer P, Schmidbauer M. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings [Internet]. Applied Physics Letters. 2007 ; 91 043103-1-043103-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2760191
Vancouver
Hanke M, Mazur YI, Marega Junior E, AbuWaar ZY, Salamo GJ, Schäfer P, Schmidbauer M. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings [Internet]. Applied Physics Letters. 2007 ; 91 043103-1-043103-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2760191
Artigo de periodico
Two-photon absorption cross-section spectrum of a 'pi'-conjugated polymer obtained using the white-light continuum Z-scan technique (2006)
Oliveira, Samuel Leite; Corrêa, D. S.; De Boni, Leonardo ; Misoguti, Lino ; Zílio, Sérgio Carlos ; Mendonça, Cleber Renato
Source: Applied Physics Letters. Unidade: IFSC
Subjects: DIODOS, POLÍMEROS (MATERIAIS), ÓPTICA, LASER
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ABNT
OLIVEIRA, Samuel Leite et al. Two-photon absorption cross-section spectrum of a 'pi'-conjugated polymer obtained using the white-light continuum Z-scan technique. Applied Physics Letters, v. 88, n. Ja 2006, p. 021911-1-021911-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2164914. Acesso em: 04 nov. 2025.
APA
Oliveira, S. L., Corrêa, D. S., De Boni, L., Misoguti, L., Zílio, S. C., & Mendonça, C. R. (2006). Two-photon absorption cross-section spectrum of a 'pi'-conjugated polymer obtained using the white-light continuum Z-scan technique. Applied Physics Letters, 88( Ja 2006), 021911-1-021911-3. doi:10.1063/1.2164914
NLM
Oliveira SL, Corrêa DS, De Boni L, Misoguti L, Zílio SC, Mendonça CR. Two-photon absorption cross-section spectrum of a 'pi'-conjugated polymer obtained using the white-light continuum Z-scan technique [Internet]. Applied Physics Letters. 2006 ; 88( Ja 2006): 021911-1-021911-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2164914
Vancouver
Oliveira SL, Corrêa DS, De Boni L, Misoguti L, Zílio SC, Mendonça CR. Two-photon absorption cross-section spectrum of a 'pi'-conjugated polymer obtained using the white-light continuum Z-scan technique [Internet]. Applied Physics Letters. 2006 ; 88( Ja 2006): 021911-1-021911-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2164914
Artigo de periodico
Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function (2003)
Marques, M; Teles, L. K.; Anjos, V; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Freire, V N; Farias, G A; Silva Junior, E F da
Source: Applied Physics Letters. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FILMES FINOS, ÓPTICA
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ABNT
MARQUES, M et al. Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function. Applied Physics Letters, v. 82, n. 18, p. 3074-3076, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1570922. Acesso em: 04 nov. 2025.
APA
Marques, M., Teles, L. K., Anjos, V., Scolfaro, L. M. R., Leite, J. R., Freire, V. N., et al. (2003). Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function. Applied Physics Letters, 82( 18), 3074-3076. doi:10.1063/1.1570922
NLM
Marques M, Teles LK, Anjos V, Scolfaro LMR, Leite JR, Freire VN, Farias GA, Silva Junior EF da. Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function [Internet]. Applied Physics Letters. 2003 ; 82( 18): 3074-3076.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1570922
Vancouver
Marques M, Teles LK, Anjos V, Scolfaro LMR, Leite JR, Freire VN, Farias GA, Silva Junior EF da. Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function [Internet]. Applied Physics Letters. 2003 ; 82( 18): 3074-3076.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1570922
Artigo de periodico
Determination of thickness and optical constants of amorphous silicon films from transmittance data (2000)
Mulato, Marcelo; Chambouleyron, Ivan Emílio; Birgin, Ernesto Julian Goldberg ; Martínez, José Mário
Source: Applied Physics Letters. Unidade: IME
Subjects: FÍSICA, ÓPTICA
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ABNT
MULATO, Marcelo et al. Determination of thickness and optical constants of amorphous silicon films from transmittance data. Applied Physics Letters, v. 77, n. 14, p. 2133-2135, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.1314299. Acesso em: 04 nov. 2025.
APA
Mulato, M., Chambouleyron, I. E., Birgin, E. J. G., & Martínez, J. M. (2000). Determination of thickness and optical constants of amorphous silicon films from transmittance data. Applied Physics Letters, 77( 14), 2133-2135. doi:10.1063/1.1314299
NLM
Mulato M, Chambouleyron IE, Birgin EJG, Martínez JM. Determination of thickness and optical constants of amorphous silicon films from transmittance data [Internet]. Applied Physics Letters. 2000 ; 77( 14): 2133-2135.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1314299
Vancouver
Mulato M, Chambouleyron IE, Birgin EJG, Martínez JM. Determination of thickness and optical constants of amorphous silicon films from transmittance data [Internet]. Applied Physics Letters. 2000 ; 77( 14): 2133-2135.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1314299
Artigo de periodico
Nonlinear optical response of hydrogenated amorphous silicon films studied by laser induced transient gratings (1995)
Ribeiro, R M; Margulis, W.; Leite, C. A. F.; Guedes, I.; Misoguti, Lino ; Bagnato, Vanderlei Salvador
Source: Applied Physics Letters. Unidade: IFSC
Subjects: ÓPTICA, MATÉRIA CONDENSADA, MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
RIBEIRO, R M et al. Nonlinear optical response of hydrogenated amorphous silicon films studied by laser induced transient gratings. Applied Physics Letters, v. 66, n. 9, p. 1089-1091, 1995Tradução . . Disponível em: https://doi.org/10.1063/1.113581. Acesso em: 04 nov. 2025.
APA
Ribeiro, R. M., Margulis, W., Leite, C. A. F., Guedes, I., Misoguti, L., & Bagnato, V. S. (1995). Nonlinear optical response of hydrogenated amorphous silicon films studied by laser induced transient gratings. Applied Physics Letters, 66( 9), 1089-1091. doi:10.1063/1.113581
NLM
Ribeiro RM, Margulis W, Leite CAF, Guedes I, Misoguti L, Bagnato VS. Nonlinear optical response of hydrogenated amorphous silicon films studied by laser induced transient gratings [Internet]. Applied Physics Letters. 1995 ; 66( 9): 1089-1091.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.113581
Vancouver
Ribeiro RM, Margulis W, Leite CAF, Guedes I, Misoguti L, Bagnato VS. Nonlinear optical response of hydrogenated amorphous silicon films studied by laser induced transient gratings [Internet]. Applied Physics Letters. 1995 ; 66( 9): 1089-1091.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.113581

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