Páez Carreño, Marcelo Nelson 
; Lopes, Alexandre Tavares; Alayo Chávez, Marco Isaías ; Pereyra, Inés
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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PÁEZ CARREÑO, Marcelo Nelson et al. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 11 nov. 2024.APA
Páez Carreño, M. N., Lopes, A. T., Alayo Chávez, M. I., & Pereyra, I. (2002). 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.NLM
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 nov. 11 ]Vancouver
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 nov. 11 ]
