Source: Physica B. Unidade: IFSC
Subjects: ENGENHARIA ELÉTRICA, FÍSICA DA MATÉRIA CONDENSADA, FILMES FINOS
ABNT
MENDES, A. C. et al. Photoexpansion and photobleaching effects in oxysulfide thin films of the Ge'S IND. 2'+'Ga IND. 2''O IND. 3' system. Physica B, v. 406, n. 23, p. 4381-4386, 2011Tradução . . Disponível em: https://doi.org/10.1016/j.physb.2011.08.091. Acesso em: 16 out. 2024.APA
Mendes, A. C., Maia, L. J. Q., Messaddeq, S. H., Messaddeq, Y., Ribeiro, S. J. L., & Siu Li, M. (2011). Photoexpansion and photobleaching effects in oxysulfide thin films of the Ge'S IND. 2'+'Ga IND. 2''O IND. 3' system. Physica B, 406( 23), 4381-4386. doi:10.1016/j.physb.2011.08.091NLM
Mendes AC, Maia LJQ, Messaddeq SH, Messaddeq Y, Ribeiro SJL, Siu Li M. Photoexpansion and photobleaching effects in oxysulfide thin films of the Ge'S IND. 2'+'Ga IND. 2''O IND. 3' system [Internet]. Physica B. 2011 ; 406( 23): 4381-4386.[citado 2024 out. 16 ] Available from: https://doi.org/10.1016/j.physb.2011.08.091Vancouver
Mendes AC, Maia LJQ, Messaddeq SH, Messaddeq Y, Ribeiro SJL, Siu Li M. Photoexpansion and photobleaching effects in oxysulfide thin films of the Ge'S IND. 2'+'Ga IND. 2''O IND. 3' system [Internet]. Physica B. 2011 ; 406( 23): 4381-4386.[citado 2024 out. 16 ] Available from: https://doi.org/10.1016/j.physb.2011.08.091