Source: Journal of Vacuum Science & Technology A. Unidade: IF
Subjects: MATERIAIS, ESPECTROSCOPIA DE RAIO X, VÁCUO
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MATSUOKA, Masao et al. Effects of arrival rate and gas pressure on the chemical bonding and composition in titanium nitride films prepared on Si(100) substrates by ion beam and vapor deposition. Journal of Vacuum Science & Technology A, v. 23, n. 1, p. 137-141, 2005Tradução . . Disponível em: https://doi.org/10.1116/1.1839895. Acesso em: 19 out. 2024.APA
Matsuoka, M., Isotani, S., Mittani, J. C. R., Chubaci, J. F. D., Ogata, K., & Kuratani, N. (2005). Effects of arrival rate and gas pressure on the chemical bonding and composition in titanium nitride films prepared on Si(100) substrates by ion beam and vapor deposition. Journal of Vacuum Science & Technology A, 23( 1), 137-141. doi:10.1116/1.1839895NLM
Matsuoka M, Isotani S, Mittani JCR, Chubaci JFD, Ogata K, Kuratani N. Effects of arrival rate and gas pressure on the chemical bonding and composition in titanium nitride films prepared on Si(100) substrates by ion beam and vapor deposition [Internet]. Journal of Vacuum Science & Technology A. 2005 ; 23( 1): 137-141.[citado 2024 out. 19 ] Available from: https://doi.org/10.1116/1.1839895Vancouver
Matsuoka M, Isotani S, Mittani JCR, Chubaci JFD, Ogata K, Kuratani N. Effects of arrival rate and gas pressure on the chemical bonding and composition in titanium nitride films prepared on Si(100) substrates by ion beam and vapor deposition [Internet]. Journal of Vacuum Science & Technology A. 2005 ; 23( 1): 137-141.[citado 2024 out. 19 ] Available from: https://doi.org/10.1116/1.1839895
