Raman active `E IND. 2´ models in aluminum nitride films (2001)
Source: Journal of Materials Science: Materials in Electronics. Unidade: IQ
Subjects: FÍSICO-QUÍMICA, ESPECTROSCOPIA RAMAN, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OLIVEIRA, I. C. et al. Raman active `E IND. 2´ models in aluminum nitride films. Journal of Materials Science: Materials in Electronics, v. 12, n. 4-6, p. 259-262, 2001Tradução . . Acesso em: 03 out. 2024.APA
Oliveira, I. C., Otani, C., Maciel, H. S., Massi, M., Noda, L. K., & Temperini, M. L. A. (2001). Raman active `E IND. 2´ models in aluminum nitride films. Journal of Materials Science: Materials in Electronics, 12( 4-6), 259-262.NLM
Oliveira IC, Otani C, Maciel HS, Massi M, Noda LK, Temperini MLA. Raman active `E IND. 2´ models in aluminum nitride films. Journal of Materials Science: Materials in Electronics. 2001 ; 12( 4-6): 259-262.[citado 2024 out. 03 ]Vancouver
Oliveira IC, Otani C, Maciel HS, Massi M, Noda LK, Temperini MLA. Raman active `E IND. 2´ models in aluminum nitride films. Journal of Materials Science: Materials in Electronics. 2001 ; 12( 4-6): 259-262.[citado 2024 out. 03 ]