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Filtros : "Dvoretsky, S A" "JETP Letters" Limpar

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  • Artigo de periodico

    Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field (2012)

    Olshanetsky, E B; Kvon, Z D; Mikhailov, N M; Dvoretsky, S A; Gusev, G M

    Source: JETP Letters. Unidade: IF

    Assunto: MAGNETISMO

    Versão PublicadaAcesso à fonteAcesso à fonteDOIHow to cite
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    • ABNT

      OLSHANETSKY, E B et al. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, v. 96, n. 4, p. 251-254, 2012Tradução . . Disponível em: https://doi.org/10.1134/S0021364012160072. Acesso em: 16 nov. 2024.

    • APA

      Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. M., Dvoretsky, S. A., & Gusev, G. M. (2012). Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, 96( 4), 251-254. doi:10.1134/S0021364012160072

    • NLM

      Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364012160072

    • Vancouver

      Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364012160072

  • Artigo de periodico

    Weak antilocalization in HgTe quantum wells near a topological transition (2010)

    Olshanetskya, E B; Kvon, Z D; Gusev, Guennadii Michailovich ; Mikhailov, Nikolai N; Dvoretsky, S A; Portal, J C

    Source: JETP Letters. Unidade: IF

    Assunto: POÇOS QUÂNTICOS

    Versão PublicadaAcesso à fonteAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      OLSHANETSKYA, E B et al. Weak antilocalization in HgTe quantum wells near a topological transition. JETP Letters, v. 91, n. 7, p. 347-350, 2010Tradução . . Disponível em: https://doi.org/10.1134/S0021364010070052. Acesso em: 16 nov. 2024.

    • APA

      Olshanetskya, E. B., Kvon, Z. D., Gusev, G. M., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2010). Weak antilocalization in HgTe quantum wells near a topological transition. JETP Letters, 91( 7), 347-350. doi:10.1134/S0021364010070052

    • NLM

      Olshanetskya EB, Kvon ZD, Gusev GM, Mikhailov NN, Dvoretsky SA, Portal JC. Weak antilocalization in HgTe quantum wells near a topological transition [Internet]. JETP Letters. 2010 ; 91( 7): 347-350.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364010070052

    • Vancouver

      Olshanetskya EB, Kvon ZD, Gusev GM, Mikhailov NN, Dvoretsky SA, Portal JC. Weak antilocalization in HgTe quantum wells near a topological transition [Internet]. JETP Letters. 2010 ; 91( 7): 347-350.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364010070052
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