Olshanetsky, E B; Kvon, Z D; Mikhailov, N M; Dvoretsky, S A; Gusev, G M 
Source: JETP Letters. Unidade: IF
Assunto: MAGNETISMO
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OLSHANETSKY, E B et al. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, v. 96, n. 4, p. 251-254, 2012Tradução . . Disponível em: https://doi.org/10.1134/S0021364012160072. Acesso em: 12 out. 2024.APA
Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. M., Dvoretsky, S. A., & Gusev, G. M. (2012). Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, 96( 4), 251-254. doi:10.1134/S0021364012160072NLM
Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 out. 12 ] Available from: https://doi.org/10.1134/S0021364012160072Vancouver
Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 out. 12 ] Available from: https://doi.org/10.1134/S0021364012160072
