Source: Journal of Electronic Materials. Unidade: EESC
Subjects: COMUNICAÇÕES OPTO-ELETRÔNICAS, TRANSISTORES, SEMICONDUTORES, MICROELETRÔNICA
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NABET, Bahram et al. The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors. Journal of Electronic Materials, v. 33, n. 2, p. 123-127, 2004Tradução . . Disponível em: https://doi.org/10.1007/s11664-004-0281-9. Acesso em: 11 nov. 2024.APA
Nabet, B., Romero, M. A., Cola, A., & Quaranta, F. (2004). The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors. Journal of Electronic Materials, 33( 2), 123-127. doi:10.1007/s11664-004-0281-9NLM
Nabet B, Romero MA, Cola A, Quaranta F. The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors [Internet]. Journal of Electronic Materials. 2004 ; 33( 2): 123-127.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1007/s11664-004-0281-9Vancouver
Nabet B, Romero MA, Cola A, Quaranta F. The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors [Internet]. Journal of Electronic Materials. 2004 ; 33( 2): 123-127.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1007/s11664-004-0281-9
