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Artigo de periodico
Ab initio investigation of topological phase transitions induced by pressure in trilayer van der Waals structures: the example of h-BN/SnTe/h-BN (2021)
Lima, Matheus P. ; Besse, Rafael ; Silva, Juarez Lopes Ferreira da
Source: Journal of Physics: Condensed Matter. Unidades: IQSC, IFSC
Subjects: FÍSICO-QUÍMICA, NANOPARTÍCULAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LIMA, Matheus P. e BESSE, Rafael e SILVA, Juarez Lopes Ferreira da. Ab initio investigation of topological phase transitions induced by pressure in trilayer van der Waals structures: the example of h-BN/SnTe/h-BN. Journal of Physics: Condensed Matter, v. 33, n. Ja 2021, p. 025003-1 -025003-7, 2021Tradução . . Disponível em: https://doi.org/10.1088/1361-648X/abac8d. Acesso em: 04 nov. 2025.
APA
Lima, M. P., Besse, R., & Silva, J. L. F. da. (2021). Ab initio investigation of topological phase transitions induced by pressure in trilayer van der Waals structures: the example of h-BN/SnTe/h-BN. Journal of Physics: Condensed Matter, 33( Ja 2021), 025003-1 -025003-7. doi:10.1088/1361-648X/abac8d
NLM
Lima MP, Besse R, Silva JLF da. Ab initio investigation of topological phase transitions induced by pressure in trilayer van der Waals structures: the example of h-BN/SnTe/h-BN [Internet]. Journal of Physics: Condensed Matter. 2021 ; 33( Ja 2021): 025003-1 -025003-7.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1088/1361-648X/abac8d
Vancouver
Lima MP, Besse R, Silva JLF da. Ab initio investigation of topological phase transitions induced by pressure in trilayer van der Waals structures: the example of h-BN/SnTe/h-BN [Internet]. Journal of Physics: Condensed Matter. 2021 ; 33( Ja 2021): 025003-1 -025003-7.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1088/1361-648X/abac8d
Artigo de periodico
Ab initio insights into the stabilization and binding mechanisms of MoS2 nanoflakes supported on graphene (2020)
Caturello, Naidel A. M. S ; Silveira, Julian Francisco Rama Vieira ; Silva, Juarez Lopes Ferreira da
Source: Physical Chemistry Chemical Physics - PCCP. Unidade: IQSC
Assunto: FÍSICO-QUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CATURELLO, Naidel A. M. S e SILVEIRA, Julian Francisco Rama Vieira e SILVA, Juarez Lopes Ferreira da. Ab initio insights into the stabilization and binding mechanisms of MoS2 nanoflakes supported on graphene. Physical Chemistry Chemical Physics - PCCP, v. 22, p. 26865--26875, 2020Tradução . . Disponível em: https://doi.org/10.1039/D0CP04573J. Acesso em: 04 nov. 2025.
APA
Caturello, N. A. M. S., Silveira, J. F. R. V., & Silva, J. L. F. da. (2020). Ab initio insights into the stabilization and binding mechanisms of MoS2 nanoflakes supported on graphene. Physical Chemistry Chemical Physics - PCCP, 22, 26865--26875. doi:10.1039/D0CP04573J
NLM
Caturello NAMS, Silveira JFRV, Silva JLF da. Ab initio insights into the stabilization and binding mechanisms of MoS2 nanoflakes supported on graphene [Internet]. Physical Chemistry Chemical Physics - PCCP. 2020 ;22 26865--26875.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1039/D0CP04573J
Vancouver
Caturello NAMS, Silveira JFRV, Silva JLF da. Ab initio insights into the stabilization and binding mechanisms of MoS2 nanoflakes supported on graphene [Internet]. Physical Chemistry Chemical Physics - PCCP. 2020 ;22 26865--26875.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1039/D0CP04573J
Artigo de periodico
Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor (2020)
Freire, Rafael L. H. ; Marcelo O. Orlandi ; Silva, Juarez Lopes Ferreira da
Source: Physical Review Materials. Unidade: IQSC
Subjects: FÍSICO-QUÍMICA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FREIRE, Rafael L. H. e MARCELO O. ORLANDI, e SILVA, Juarez Lopes Ferreira da. Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor. Physical Review Materials, v. 4, n. 10, p. 104002, 2020Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.4.104002. Acesso em: 04 nov. 2025.
APA
Freire, R. L. H., Marcelo O. Orlandi,, & Silva, J. L. F. da. (2020). Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor. Physical Review Materials, 4( 10), 104002. doi:10.1103/PhysRevMaterials.4.104002
NLM
Freire RLH, Marcelo O. Orlandi, Silva JLF da. Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor [Internet]. Physical Review Materials. 2020 ; 4( 10): 104002.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.104002
Vancouver
Freire RLH, Marcelo O. Orlandi, Silva JLF da. Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor [Internet]. Physical Review Materials. 2020 ; 4( 10): 104002.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.104002

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