Annealing and temperature effects on minority carriers in ion implanted silicon solar cells (1990)
Nubile, Paulo; Beloto, Antonio Fernando; Veissid, Nelson; Waldman, Bernard; Pereyra, Inés 
; Andrade, Adnei Melges de
Source: Conference Record. Conference titles: IEEE Photovoltaic Specialists Conference. Unidade: EP
Assunto: CÉLULAS SOLARES
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NUBILE, Paulo et al. Annealing and temperature effects on minority carriers in ion implanted silicon solar cells. 1990, Anais.. New York: Ieee, 1990. . Acesso em: 06 nov. 2024.APA
Nubile, P., Beloto, A. F., Veissid, N., Waldman, B., Pereyra, I., & Andrade, A. M. de. (1990). Annealing and temperature effects on minority carriers in ion implanted silicon solar cells. In Conference Record. New York: Ieee.NLM
Nubile P, Beloto AF, Veissid N, Waldman B, Pereyra I, Andrade AM de. Annealing and temperature effects on minority carriers in ion implanted silicon solar cells. Conference Record. 1990 ;[citado 2024 nov. 06 ]Vancouver
Nubile P, Beloto AF, Veissid N, Waldman B, Pereyra I, Andrade AM de. Annealing and temperature effects on minority carriers in ion implanted silicon solar cells. Conference Record. 1990 ;[citado 2024 nov. 06 ]
