Discovery of the persistent luminescence mechanism of CdSi'O IND. 3':'Tb POT. 3+' (2012)
Source: Journal of Physical Chemistry C. Unidades: IQ, IFSC
Subjects: LUMINESCÊNCIA, RADIAÇÃO SINCROTRON
ABNT
RODRIGUES, Lucas Carvalho Veloso et al. Discovery of the persistent luminescence mechanism of CdSi'O IND. 3':'Tb POT. 3+'. Journal of Physical Chemistry C, v. 116, n. 20, p. 11232-11240, 2012Tradução . . Disponível em: https://doi.org/10.1021/jp212021k. Acesso em: 16 ago. 2024.APA
Rodrigues, L. C. V., Brito, H. F. de, Hölsä, J., Stefani, R., Felinto, M. C. F. da C., Lastusaari, M., et al. (2012). Discovery of the persistent luminescence mechanism of CdSi'O IND. 3':'Tb POT. 3+'. Journal of Physical Chemistry C, 116( 20), 11232-11240. doi:10.1021/jp212021kNLM
Rodrigues LCV, Brito HF de, Hölsä J, Stefani R, Felinto MCF da C, Lastusaari M, Laamanen T, Nunes LA de O. Discovery of the persistent luminescence mechanism of CdSi'O IND. 3':'Tb POT. 3+' [Internet]. Journal of Physical Chemistry C. 2012 ; 116( 20): 11232-11240.[citado 2024 ago. 16 ] Available from: https://doi.org/10.1021/jp212021kVancouver
Rodrigues LCV, Brito HF de, Hölsä J, Stefani R, Felinto MCF da C, Lastusaari M, Laamanen T, Nunes LA de O. Discovery of the persistent luminescence mechanism of CdSi'O IND. 3':'Tb POT. 3+' [Internet]. Journal of Physical Chemistry C. 2012 ; 116( 20): 11232-11240.[citado 2024 ago. 16 ] Available from: https://doi.org/10.1021/jp212021k