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  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: MATERIAIS NANOESTRUTURADOS, ELÉTRONS, DIFRAÇÃO POR RAIOS X, ESTRUTURA ELETRÔNICA

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      TEODORO, M. D. et al. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure. Journal of Applied Physics, v. 112, n. 1, p. 014319-1-014319-9, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4733964. Acesso em: 18 abr. 2024.
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      Teodoro, M. D., Malachias, A., Oliveira, V. L., Cesar, D. F., Richard, V. L., Marques, G. E., et al. (2012). In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure. Journal of Applied Physics, 112( 1), 014319-1-014319-9. doi:10.1063/1.4733964
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      Teodoro MD, Malachias A, Oliveira VL, Cesar DF, Richard VL, Marques GE, Marega Júnior E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure [Internet]. Journal of Applied Physics. 2012 ; 112( 1): 014319-1-014319-9.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.4733964
    • Vancouver

      Teodoro MD, Malachias A, Oliveira VL, Cesar DF, Richard VL, Marques GE, Marega Júnior E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure [Internet]. Journal of Applied Physics. 2012 ; 112( 1): 014319-1-014319-9.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.4733964
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, POLARIZAÇÃO

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      MAZUR, Yu. I. et al. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures. Journal of Applied Physics, v. 112, n. 8, p. 084314-1-084314-7, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4759318. Acesso em: 18 abr. 2024.
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      Mazur, Y. I., Dorogan, V. G., Ware, M. E., Marega Júnior, E., Lytvyn, P. M., Zhuchenko, Z. Y., et al. (2012). Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures. Journal of Applied Physics, 112( 8), 084314-1-084314-7. doi:10.1063/1.4759318
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      Mazur YI, Dorogan VG, Ware ME, Marega Júnior E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures [Internet]. Journal of Applied Physics. 2012 ; 112( 8): 084314-1-084314-7.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.4759318
    • Vancouver

      Mazur YI, Dorogan VG, Ware ME, Marega Júnior E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures [Internet]. Journal of Applied Physics. 2012 ; 112( 8): 084314-1-084314-7.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.4759318
  • Source: Journal of Applied Physics. Conference titles: International Conference on the Study of Matter at Extreme Conditions - SMEC. Unidade: IFSC

    Subjects: OXIGÊNIO (FLUXO), ÓPTICA, FILMES FINOS

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      PEREIRA, André L. J. et al. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering. Journal of Applied Physics. College Park: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.4724334. Acesso em: 18 abr. 2024. , 2012
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      Pereira, A. L. J., Lisboa Filho, P. N., Acuña, J., Brandt, I. S., Pasa, A. A., Zanatta, A. R., et al. (2012). Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering. Journal of Applied Physics. College Park: American Institute of Physics - AIP. doi:10.1063/1.4724334
    • NLM

      Pereira ALJ, Lisboa Filho PN, Acuña J, Brandt IS, Pasa AA, Zanatta AR, Vilcarromero J, Beltrán A, Silva JHD da. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering [Internet]. Journal of Applied Physics. 2012 ; 111( 11): 113513-1-113513-11.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.4724334
    • Vancouver

      Pereira ALJ, Lisboa Filho PN, Acuña J, Brandt IS, Pasa AA, Zanatta AR, Vilcarromero J, Beltrán A, Silva JHD da. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering [Internet]. Journal of Applied Physics. 2012 ; 111( 11): 113513-1-113513-11.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.4724334
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, LUMINESCÊNCIA, BLENDAS, ZINCO

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      FARIA JUNIOR, P. E. e SIPAHI, Guilherme Matos. Band structure calculations of 'IN'P wurtzite/zinc-blende quantum wells. Journal of Applied Physics, v. 112, n. 10, p. 103716-1-103716-10, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4767511. Acesso em: 18 abr. 2024.
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      Faria Junior, P. E., & Sipahi, G. M. (2012). Band structure calculations of 'IN'P wurtzite/zinc-blende quantum wells. Journal of Applied Physics, 112( 10), 103716-1-103716-10. doi:10.1063/1.4767511
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      Faria Junior PE, Sipahi GM. Band structure calculations of 'IN'P wurtzite/zinc-blende quantum wells [Internet]. Journal of Applied Physics. 2012 ; 112( 10): 103716-1-103716-10.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.4767511
    • Vancouver

      Faria Junior PE, Sipahi GM. Band structure calculations of 'IN'P wurtzite/zinc-blende quantum wells [Internet]. Journal of Applied Physics. 2012 ; 112( 10): 103716-1-103716-10.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.4767511
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: ENERGIA (TRANSFERÊNCIA), ÍONS, ÉRBIO, EMISSÃO DA LUZ

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      ZANATTA, Antonio Ricardo. Visible light emission and energy transfer processes in 'SM'-doped nitride films. Journal of Applied Physics, v. 111, n. Ju 2012, p. 123105-1-123105-8, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4729911. Acesso em: 18 abr. 2024.
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      Zanatta, A. R. (2012). Visible light emission and energy transfer processes in 'SM'-doped nitride films. Journal of Applied Physics, 111( Ju 2012), 123105-1-123105-8. doi:10.1063/1.4729911
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      Zanatta AR. Visible light emission and energy transfer processes in 'SM'-doped nitride films [Internet]. Journal of Applied Physics. 2012 ; 111( Ju 2012): 123105-1-123105-8.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.4729911
    • Vancouver

      Zanatta AR. Visible light emission and energy transfer processes in 'SM'-doped nitride films [Internet]. Journal of Applied Physics. 2012 ; 111( Ju 2012): 123105-1-123105-8.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.4729911
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, FERROMAGNETISMO, FILMES FINOS

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      FERRI, F. A. et al. Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy. Journal of Applied Physics, v. 112, n. 3, p. 034317-1-034317-6, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4745904. Acesso em: 18 abr. 2024.
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      Ferri, F. A., Coelho, L. N., Kunets, V. P., Salamo, G. J., & Marega Júnior, E. (2012). Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy. Journal of Applied Physics, 112( 3), 034317-1-034317-6. doi:10.1063/1.4745904
    • NLM

      Ferri FA, Coelho LN, Kunets VP, Salamo GJ, Marega Júnior E. Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy [Internet]. Journal of Applied Physics. 2012 ; 112( 3): 034317-1-034317-6.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.4745904
    • Vancouver

      Ferri FA, Coelho LN, Kunets VP, Salamo GJ, Marega Júnior E. Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy [Internet]. Journal of Applied Physics. 2012 ; 112( 3): 034317-1-034317-6.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.4745904
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FILMES FINOS, NANOTECNOLOGIA, NANOPARTÍCULAS, ESPECTROSCOPIA

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      ACUÑA, J. J. S. et al. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes. Journal of Applied Physics, v. 109, n. 11, p. 114317-1-114317-7, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3593269. Acesso em: 18 abr. 2024.
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      Acuña, J. J. S., Escobar, M., Goyanes, S. N., Candal, R. J., Zanatta, A. R., & Alvarez, F. (2011). Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes. Journal of Applied Physics, 109( 11), 114317-1-114317-7. doi:10.1063/1.3593269
    • NLM

      Acuña JJS, Escobar M, Goyanes SN, Candal RJ, Zanatta AR, Alvarez F. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes [Internet]. Journal of Applied Physics. 2011 ; 109( 11): 114317-1-114317-7.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3593269
    • Vancouver

      Acuña JJS, Escobar M, Goyanes SN, Candal RJ, Zanatta AR, Alvarez F. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes [Internet]. Journal of Applied Physics. 2011 ; 109( 11): 114317-1-114317-7.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3593269
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: VIDRO, ENERGIA (TRANSFERÊNCIA), ESPECTROSCOPIA

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      TERRA, I. A. A. et al. Analysis of energy transfer processes in 'Yb POT. 3+'-'Tb POT. 3+' co-doped, low-silica calcium aluminosilicate glasses. Journal of Applied Physics, v. 110, n. 8, p. 083108-1-083108-5, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3653272. Acesso em: 18 abr. 2024.
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      Terra, I. A. A., Borrero-González, L. J., Nunes, L. A. de O., Belançon, M. P., Rohling, J. H., Baesso, M. L., & Malta, O. L. (2011). Analysis of energy transfer processes in 'Yb POT. 3+'-'Tb POT. 3+' co-doped, low-silica calcium aluminosilicate glasses. Journal of Applied Physics, 110( 8), 083108-1-083108-5. doi:10.1063/1.3653272
    • NLM

      Terra IAA, Borrero-González LJ, Nunes LA de O, Belançon MP, Rohling JH, Baesso ML, Malta OL. Analysis of energy transfer processes in 'Yb POT. 3+'-'Tb POT. 3+' co-doped, low-silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2011 ; 110( 8): 083108-1-083108-5.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3653272
    • Vancouver

      Terra IAA, Borrero-González LJ, Nunes LA de O, Belançon MP, Rohling JH, Baesso ML, Malta OL. Analysis of energy transfer processes in 'Yb POT. 3+'-'Tb POT. 3+' co-doped, low-silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2011 ; 110( 8): 083108-1-083108-5.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3653272
  • Source: Journal of Applied Physics. Unidades: IFSC, IQSC

    Subjects: POLÍMEROS (MATERIAIS), FILMES FINOS, ELETRÓLITOS

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      FIRMINO, A. et al. DNA-based ionic conducting membranes. Journal of Applied Physics, v. 110, n. 3, p. 033704-1-033704-5, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3610951. Acesso em: 18 abr. 2024.
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      Firmino, A., Grote, J. G., Kjzar, F., M'Peko, J. C., & Pawlicka, A. (2011). DNA-based ionic conducting membranes. Journal of Applied Physics, 110( 3), 033704-1-033704-5. doi:10.1063/1.3610951
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      Firmino A, Grote JG, Kjzar F, M'Peko JC, Pawlicka A. DNA-based ionic conducting membranes [Internet]. Journal of Applied Physics. 2011 ; 110( 3): 033704-1-033704-5.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3610951
    • Vancouver

      Firmino A, Grote JG, Kjzar F, M'Peko JC, Pawlicka A. DNA-based ionic conducting membranes [Internet]. Journal of Applied Physics. 2011 ; 110( 3): 033704-1-033704-5.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3610951
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTÔNICA, DENSIDADE (TEORIA), ABSORÇÃO DA LUZ, LASER

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      VIVAS, Marcelo Gonçalves et al. Two-photon absorption spectra of carotenoids compounds. Journal of Applied Physics, v. 109, n. 10, p. 103529-1-103529-8, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3590157. Acesso em: 18 abr. 2024.
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      Vivas, M. G., Silva, D. L., De Boni, L., Zalesny, R., Bartkowiak, W., & Mendonça, C. R. (2011). Two-photon absorption spectra of carotenoids compounds. Journal of Applied Physics, 109( 10), 103529-1-103529-8. doi:10.1063/1.3590157
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      Vivas MG, Silva DL, De Boni L, Zalesny R, Bartkowiak W, Mendonça CR. Two-photon absorption spectra of carotenoids compounds [Internet]. Journal of Applied Physics. 2011 ; 109( 10): 103529-1-103529-8.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3590157
    • Vancouver

      Vivas MG, Silva DL, De Boni L, Zalesny R, Bartkowiak W, Mendonça CR. Two-photon absorption spectra of carotenoids compounds [Internet]. Journal of Applied Physics. 2011 ; 109( 10): 103529-1-103529-8.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3590157
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA

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      PUSEP, Yuri A. et al. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, v. 110, n. 7, p. 073706-1-073706-6, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3646365. Acesso em: 18 abr. 2024.
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      Pusep, Y. A., Gold, A., Mamani, N. C., Godoy, M. P. F., Gobato, Y. G., & LaPierre, R. R. (2011). Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, 110( 7), 073706-1-073706-6. doi:10.1063/1.3646365
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      Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3646365
    • Vancouver

      Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3646365
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: DIFRAÇÃO POR RAIOS X, FOTOLUMINESCÊNCIA, CRESCIMENTO DE CRISTAIS

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      GRACIA, Lourdes et al. Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation. Journal of Applied Physics, v. 110, n. 4, p. 043501-1-043501-11, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3615948. Acesso em: 18 abr. 2024.
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      Gracia, L., Longo, V. M., Cavalcante, L. S., Beltrán, A., Avansi, W., Siu Li, M., et al. (2011). Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation. Journal of Applied Physics, 110( 4), 043501-1-043501-11. doi:10.1063/1.3615948
    • NLM

      Gracia L, Longo VM, Cavalcante LS, Beltrán A, Avansi W, Siu Li M, Mastelaro VR, Varela JA, Longo E, Andrés J. Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 043501-1-043501-11.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3615948
    • Vancouver

      Gracia L, Longo VM, Cavalcante LS, Beltrán A, Avansi W, Siu Li M, Mastelaro VR, Varela JA, Longo E, Andrés J. Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 043501-1-043501-11.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3615948
  • Source: Journal of Applied Physics. Unidades: IFSC, IF

    Subjects: POÇOS QUÂNTICOS, EFEITO HALL, SEMICONDUTORES (SISTEMAS), FÍSICA DA MATÉRIA CONDENSADA

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      PUSEP, Yuri A. et al. Magnetotransport in a wide parabolic well superimposed with a superlattice. Journal of Applied Physics, v. 109, n. 10, p. 102403-1-102403-3, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3576134. Acesso em: 18 abr. 2024.
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      Pusep, Y. A., Gusev, G. M., Bakarov, A. K., Toropov, A. I., & Portal, J. C. (2011). Magnetotransport in a wide parabolic well superimposed with a superlattice. Journal of Applied Physics, 109( 10), 102403-1-102403-3. doi:10.1063/1.3576134
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      Pusep YA, Gusev GM, Bakarov AK, Toropov AI, Portal JC. Magnetotransport in a wide parabolic well superimposed with a superlattice [Internet]. Journal of Applied Physics. 2011 ; 109( 10): 102403-1-102403-3.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3576134
    • Vancouver

      Pusep YA, Gusev GM, Bakarov AK, Toropov AI, Portal JC. Magnetotransport in a wide parabolic well superimposed with a superlattice [Internet]. Journal of Applied Physics. 2011 ; 109( 10): 102403-1-102403-3.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3576134
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FILMES FINOS, FOTOLUMINESCÊNCIA, ENERGIA (TRANSFERÊNCIA)

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      THERÉZIO, Eralci M. et al. Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers. Journal of Applied Physics, v. 110, n. 4, p. 044504-1-044504-6, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3622143. Acesso em: 18 abr. 2024.
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      Therézio, E. M., Piovesan, E., Anni, M., Silva, R. A., Oliveira Junior, O. N. de, & Marletta, A. (2011). Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers. Journal of Applied Physics, 110( 4), 044504-1-044504-6. doi:10.1063/1.3622143
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      Therézio EM, Piovesan E, Anni M, Silva RA, Oliveira Junior ON de, Marletta A. Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 044504-1-044504-6.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3622143
    • Vancouver

      Therézio EM, Piovesan E, Anni M, Silva RA, Oliveira Junior ON de, Marletta A. Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 044504-1-044504-6.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3622143
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: TERRAS RARAS, DIELÉTRICOS (PROPRIEDADES), MATERIAIS CERÂMICOS

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      MORAES, A. P. A. et al. Structural and optical properties of rare earth-doped '('Ba IND. 0.77''Ca IND. 0.23') IND. 1-x''(Sm, Nd, Pr, Yb) IND. x'Ti'O IND. 3'. Journal of Applied Physics, v. 109, n. 12, p. 124102-1-124102-8, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3594710. Acesso em: 18 abr. 2024.
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      Moraes, A. P. A., Souza Filho, A. G., Freire, P. T. C., Mendes Filho, J., M'Peko, J. C., Hernandes, A. C., et al. (2011). Structural and optical properties of rare earth-doped '('Ba IND. 0.77''Ca IND. 0.23') IND. 1-x''(Sm, Nd, Pr, Yb) IND. x'Ti'O IND. 3'. Journal of Applied Physics, 109( 12), 124102-1-124102-8. doi:10.1063/1.3594710
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      Moraes APA, Souza Filho AG, Freire PTC, Mendes Filho J, M'Peko JC, Hernandes AC, Antonelli E, Blair MW, Muenchausen RE, Jacobsohn LG, Paraguassu W. Structural and optical properties of rare earth-doped '('Ba IND. 0.77''Ca IND. 0.23') IND. 1-x''(Sm, Nd, Pr, Yb) IND. x'Ti'O IND. 3' [Internet]. Journal of Applied Physics. 2011 ; 109( 12): 124102-1-124102-8.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3594710
    • Vancouver

      Moraes APA, Souza Filho AG, Freire PTC, Mendes Filho J, M'Peko JC, Hernandes AC, Antonelli E, Blair MW, Muenchausen RE, Jacobsohn LG, Paraguassu W. Structural and optical properties of rare earth-doped '('Ba IND. 0.77''Ca IND. 0.23') IND. 1-x''(Sm, Nd, Pr, Yb) IND. x'Ti'O IND. 3' [Internet]. Journal of Applied Physics. 2011 ; 109( 12): 124102-1-124102-8.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3594710
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: ESPECTROSCOPIA RAMAN, MAGNETISMO (PROPRIEDADES), FILMES FINOS

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      FERRI, F. A. et al. Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films. Journal of Applied Physics, v. 108, n. 11, p. 113922-1-113922-5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3520661. Acesso em: 18 abr. 2024.
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      Ferri, F. A., Silva, M. de A. P. da, Zanatta, A. R., Varella, A. L. S., & Oliveira, A. J. A. (2010). Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films. Journal of Applied Physics, 108( 11), 113922-1-113922-5. doi:10.1063/1.3520661
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      Ferri FA, Silva M de AP da, Zanatta AR, Varella ALS, Oliveira AJA. Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films [Internet]. Journal of Applied Physics. 2010 ; 108( 11): 113922-1-113922-5.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3520661
    • Vancouver

      Ferri FA, Silva M de AP da, Zanatta AR, Varella ALS, Oliveira AJA. Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films [Internet]. Journal of Applied Physics. 2010 ; 108( 11): 113922-1-113922-5.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3520661
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CERÂMICA, PROPRIEDADES DOS MATERIAIS, FERROELETRICIDADE, ABSORÇÃO DA LUZ, ESTADO SÓLIDO (FASES), DIFRAÇÃO POR RAIOS X

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      MASTELARO, Valmor Roberto et al. Spontaneous long and short-range ferroelectric ordering in 'Pb IND.0.55''La IND.0.30'Ti'O IND.3' ceramics. Journal of Applied Physics, v. 107, n. 11, p. 114103-1-114103-9, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3431024. Acesso em: 18 abr. 2024.
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      Mastelaro, V. R., Mascarenhas, Y. P., Neves, P. P., Mir, M., Doriguetto, A. C., Michalowicz, A., et al. (2010). Spontaneous long and short-range ferroelectric ordering in 'Pb IND.0.55''La IND.0.30'Ti'O IND.3' ceramics. Journal of Applied Physics, 107( 11), 114103-1-114103-9. doi:10.1063/1.3431024
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      Mastelaro VR, Mascarenhas YP, Neves PP, Mir M, Doriguetto AC, Michalowicz A, Moscovici J, Lente MH, Eiras JA. Spontaneous long and short-range ferroelectric ordering in 'Pb IND.0.55''La IND.0.30'Ti'O IND.3' ceramics [Internet]. Journal of Applied Physics. 2010 ; 107( 11): 114103-1-114103-9.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3431024
    • Vancouver

      Mastelaro VR, Mascarenhas YP, Neves PP, Mir M, Doriguetto AC, Michalowicz A, Moscovici J, Lente MH, Eiras JA. Spontaneous long and short-range ferroelectric ordering in 'Pb IND.0.55''La IND.0.30'Ti'O IND.3' ceramics [Internet]. Journal of Applied Physics. 2010 ; 107( 11): 114103-1-114103-9.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3431024
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, TEMPERATURA (VARIAÇÃO)

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      BORRERO-GONZÁLEZ, L. J. et al. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, v. 108, n. 1, p. 013105-1-013105-5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3457900. Acesso em: 18 abr. 2024.
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      Borrero-González, L. J., Nunes, L. A. de O., Andreeta, M. R. B., Wojcik, J., Mascher, P., Pusep, Y. A., et al. (2010). The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, 108( 1), 013105-1-013105-5. doi:10.1063/1.3457900
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      Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3457900
    • Vancouver

      Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3457900
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SUPERCONDUTIVIDADE, ELETROMAGNETISMO, ELETRODINÂMICA, ELETRICIDADE E ELETRÔNICA

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      SERGEENKOV, S. et al. Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions. Journal of Applied Physics, v. 107, n. 9, p. 096102-1-096102-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3407566. Acesso em: 18 abr. 2024.
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      Sergeenkov, S., Rivera, V. A. G., Marega Júnior, E., & Moreira, F. M. A. (2010). Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions. Journal of Applied Physics, 107( 9), 096102-1-096102-3. doi:10.1063/1.3407566
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      Sergeenkov S, Rivera VAG, Marega Júnior E, Moreira FMA. Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions [Internet]. Journal of Applied Physics. 2010 ; 107( 9): 096102-1-096102-3.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3407566
    • Vancouver

      Sergeenkov S, Rivera VAG, Marega Júnior E, Moreira FMA. Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions [Internet]. Journal of Applied Physics. 2010 ; 107( 9): 096102-1-096102-3.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3407566
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: DIFRAÇÃO POR RAIOS X, NANOTECNOLOGIA, ESTRUTURA ELETRÔNICA, OXIDAÇÃO, FILMES FINOS, SEMICONDUTORES

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      BERENGUE, O. M. et al. Semiconducting 'Sn IND. 3''O IND.4' nanobelts: growth and electronic structure. Journal of Applied Physics, v. 107, n. 3, p. 033717-1-033717-4, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3294613. Acesso em: 18 abr. 2024.
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      Berengue, O. M., Simon, R. A., Chiquito, A. J., Dalmaschio, C. J., Leite, E. R., Guerreiro, H. A., & Guimarães, F. E. G. (2010). Semiconducting 'Sn IND. 3''O IND.4' nanobelts: growth and electronic structure. Journal of Applied Physics, 107( 3), 033717-1-033717-4. doi:10.1063/1.3294613
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      Berengue OM, Simon RA, Chiquito AJ, Dalmaschio CJ, Leite ER, Guerreiro HA, Guimarães FEG. Semiconducting 'Sn IND. 3''O IND.4' nanobelts: growth and electronic structure [Internet]. Journal of Applied Physics. 2010 ; 107( 3): 033717-1-033717-4.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3294613
    • Vancouver

      Berengue OM, Simon RA, Chiquito AJ, Dalmaschio CJ, Leite ER, Guerreiro HA, Guimarães FEG. Semiconducting 'Sn IND. 3''O IND.4' nanobelts: growth and electronic structure [Internet]. Journal of Applied Physics. 2010 ; 107( 3): 033717-1-033717-4.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.3294613

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