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Trabalho de evento
Capacitance spectroscopy of InAS/GaAs quantum dots structures (2001)
Chiquito, A J; Pusep, Yuri A; Mergulhao, S; Galzerani, J C; Moshegov, N T
Source: Proceedings. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CHIQUITO, A J et al. Capacitance spectroscopy of InAS/GaAs quantum dots structures. 2001, Anais.. Berlin: Springer-Verlag, 2001. . Acesso em: 15 set. 2024.
APA
Chiquito, A. J., Pusep, Y. A., Mergulhao, S., Galzerani, J. C., & Moshegov, N. T. (2001). Capacitance spectroscopy of InAS/GaAs quantum dots structures. In Proceedings. Berlin: Springer-Verlag.
NLM
Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov NT. Capacitance spectroscopy of InAS/GaAs quantum dots structures. Proceedings. 2001 ;[citado 2024 set. 15 ]
Vancouver
Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov NT. Capacitance spectroscopy of InAS/GaAs quantum dots structures. Proceedings. 2001 ;[citado 2024 set. 15 ]
Artigo de periodico
Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices (2001)
Chiquito, Adenilson J; Pusep, Yuri A; Mergulhao, Sergio; Galzerani, Jose Carlos; Moshegov,Nikolai; Miller, David L
Source: Japanese Journal of Applied Physics. Part. 1. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CHIQUITO, Adenilson J et al. Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices. Japanese Journal of Applied Physics. Part. 1, v. 40, n. 3B, p. 2006-2009, 2001Tradução . . Disponível em: https://doi.org/10.1143/JJAP.40.2006. Acesso em: 15 set. 2024.
APA
Chiquito, A. J., Pusep, Y. A., Mergulhao, S., Galzerani, J. C., Moshegov, N., & Miller, D. L. (2001). Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices. Japanese Journal of Applied Physics. Part. 1, 40( 3B), 2006-2009. doi:10.1143/JJAP.40.2006
NLM
Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov N, Miller DL. Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices [Internet]. Japanese Journal of Applied Physics. Part. 1. 2001 ;40( 3B): 2006-2009.[citado 2024 set. 15 ] Available from: https://doi.org/10.1143/JJAP.40.2006
Vancouver
Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov N, Miller DL. Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices [Internet]. Japanese Journal of Applied Physics. Part. 1. 2001 ;40( 3B): 2006-2009.[citado 2024 set. 15 ] Available from: https://doi.org/10.1143/JJAP.40.2006
Trabalho de evento
Collective plasma response of interacting electrons localized in disordered GaAs/AlGaAs superlattices (2001)
Pusep, Yuri A; Fortunato, W; González-Borrero, Pedro Pablo; Toropov, A I; Galzerani, J C
Source: Proceedings. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Collective plasma response of interacting electrons localized in disordered GaAs/AlGaAs superlattices. 2001, Anais.. Berlin: Springer-Verlag, 2001. . Acesso em: 15 set. 2024.
APA
Pusep, Y. A., Fortunato, W., González-Borrero, P. P., Toropov, A. I., & Galzerani, J. C. (2001). Collective plasma response of interacting electrons localized in disordered GaAs/AlGaAs superlattices. In Proceedings. Berlin: Springer-Verlag.
NLM
Pusep YA, Fortunato W, González-Borrero PP, Toropov AI, Galzerani JC. Collective plasma response of interacting electrons localized in disordered GaAs/AlGaAs superlattices. Proceedings. 2001 ;[citado 2024 set. 15 ]
Vancouver
Pusep YA, Fortunato W, González-Borrero PP, Toropov AI, Galzerani JC. Collective plasma response of interacting electrons localized in disordered GaAs/AlGaAs superlattices. Proceedings. 2001 ;[citado 2024 set. 15 ]
Artigo de periodico
Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system (2001)
Chiquito, Adenilson J; Pusep, Yuri A; Mergulhao, Sergio; Galzerani, Jose Carlos; Moshegov,Nikolai
Source: Japanese Journal of Applied Physics. Part. 1. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CHIQUITO, Adenilson J et al. Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system. Japanese Journal of Applied Physics. Part. 1, v. 40, n. 3B, p. 1882-1884, 2001Tradução . . Disponível em: https://doi.org/10.1143/JJAP.40.1882. Acesso em: 15 set. 2024.
APA
Chiquito, A. J., Pusep, Y. A., Mergulhao, S., Galzerani, J. C., & Moshegov, N. (2001). Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system. Japanese Journal of Applied Physics. Part. 1, 40( 3B), 1882-1884. doi:10.1143/JJAP.40.1882
NLM
Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov N. Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system [Internet]. Japanese Journal of Applied Physics. Part. 1. 2001 ;40( 3B): 1882-1884.[citado 2024 set. 15 ] Available from: https://doi.org/10.1143/JJAP.40.1882
Vancouver
Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov N. Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system [Internet]. Japanese Journal of Applied Physics. Part. 1. 2001 ;40( 3B): 1882-1884.[citado 2024 set. 15 ] Available from: https://doi.org/10.1143/JJAP.40.1882

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