Filtros : "IFSC" "Japão" "Moshegov,Nikolai" Limpar

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  • Source: Japanese Journal of Applied Physics. Part. 1. Unidade: IFSC

    Assunto: FÍSICA DA MATÉRIA CONDENSADA

    PrivadoAcesso à fonteDOIHow to cite
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    • ABNT

      CHIQUITO, Adenilson J et al. Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices. Japanese Journal of Applied Physics. Part. 1, v. 40, n. 3B, p. 2006-2009, 2001Tradução . . Disponível em: https://doi.org/10.1143/JJAP.40.2006. Acesso em: 16 out. 2024.
    • APA

      Chiquito, A. J., Pusep, Y. A., Mergulhao, S., Galzerani, J. C., Moshegov, N., & Miller, D. L. (2001). Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices. Japanese Journal of Applied Physics. Part. 1, 40( 3B), 2006-2009. doi:10.1143/JJAP.40.2006
    • NLM

      Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov N, Miller DL. Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices [Internet]. Japanese Journal of Applied Physics. Part. 1. 2001 ;40( 3B): 2006-2009.[citado 2024 out. 16 ] Available from: https://doi.org/10.1143/JJAP.40.2006
    • Vancouver

      Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov N, Miller DL. Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices [Internet]. Japanese Journal of Applied Physics. Part. 1. 2001 ;40( 3B): 2006-2009.[citado 2024 out. 16 ] Available from: https://doi.org/10.1143/JJAP.40.2006
  • Source: Japanese Journal of Applied Physics. Part. 1. Unidade: IFSC

    Assunto: FÍSICA DA MATÉRIA CONDENSADA

    PrivadoAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      CHIQUITO, Adenilson J et al. Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system. Japanese Journal of Applied Physics. Part. 1, v. 40, n. 3B, p. 1882-1884, 2001Tradução . . Disponível em: https://doi.org/10.1143/JJAP.40.1882. Acesso em: 16 out. 2024.
    • APA

      Chiquito, A. J., Pusep, Y. A., Mergulhao, S., Galzerani, J. C., & Moshegov, N. (2001). Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system. Japanese Journal of Applied Physics. Part. 1, 40( 3B), 1882-1884. doi:10.1143/JJAP.40.1882
    • NLM

      Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov N. Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system [Internet]. Japanese Journal of Applied Physics. Part. 1. 2001 ;40( 3B): 1882-1884.[citado 2024 out. 16 ] Available from: https://doi.org/10.1143/JJAP.40.1882
    • Vancouver

      Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov N. Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system [Internet]. Japanese Journal of Applied Physics. Part. 1. 2001 ;40( 3B): 1882-1884.[citado 2024 out. 16 ] Available from: https://doi.org/10.1143/JJAP.40.1882

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