ReP USP - Resultado da busca

Artigo de periodico
K center dot p calculations of electronic and optical properties of p-doped (001) AlGaN/GaN thin superlattices (2002)
Rodrigues, Sara C P; Scolfaro, L M R; Sipahi, Guilherme Matos; Noriega, O C; Leite, Jose Roberto
Source: Physica Status Solidi B. Unidades: IF, IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, Sara C P et al. K center dot p calculations of electronic and optical properties of p-doped (001) AlGaN/GaN thin superlattices. Physica Status Solidi B, v. 234, n. 3, p. 906-910, 2002Tradução . . Disponível em: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=101521325&PLACEBO=IE.pdf. Acesso em: 28 ago. 2024.
APA
Rodrigues, S. C. P., Scolfaro, L. M. R., Sipahi, G. M., Noriega, O. C., & Leite, J. R. (2002). K center dot p calculations of electronic and optical properties of p-doped (001) AlGaN/GaN thin superlattices. Physica Status Solidi B, 234( 3), 906-910. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=101521325&PLACEBO=IE.pdf
NLM
Rodrigues SCP, Scolfaro LMR, Sipahi GM, Noriega OC, Leite JR. K center dot p calculations of electronic and optical properties of p-doped (001) AlGaN/GaN thin superlattices [Internet]. Physica Status Solidi B. 2002 ; 234( 3): 906-910.[citado 2024 ago. 28 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=101521325&PLACEBO=IE.pdf
Vancouver
Rodrigues SCP, Scolfaro LMR, Sipahi GM, Noriega OC, Leite JR. K center dot p calculations of electronic and optical properties of p-doped (001) AlGaN/GaN thin superlattices [Internet]. Physica Status Solidi B. 2002 ; 234( 3): 906-910.[citado 2024 ago. 28 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=101521325&PLACEBO=IE.pdf
Artigo de periodico
Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.x''Ga IND.1-x'N/GaN superlattices (2001)
Rodrigues, S C P; Sipahi, Guilherme Matos; Scolfaro, L M R; Leite, J. R.
Source: Journal of Physics:Condensed Matter. Unidades: IFSC, IF
Subjects: MATÉRIA CONDENSADA, MECÂNICA ESTATÍSTICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, S C P et al. Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.x''Ga IND.1-x'N/GaN superlattices. Journal of Physics:Condensed Matter, v. 13, p. 3381-3387, 2001Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/13/14/311. Acesso em: 28 ago. 2024.
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2001). Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.x''Ga IND.1-x'N/GaN superlattices. Journal of Physics:Condensed Matter, 13, 3381-3387. doi:10.1088/0953-8984/13/14/311
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.x''Ga IND.1-x'N/GaN superlattices [Internet]. Journal of Physics:Condensed Matter. 2001 ; 13 3381-3387.[citado 2024 ago. 28 ] Available from: https://doi.org/10.1088/0953-8984/13/14/311
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.x''Ga IND.1-x'N/GaN superlattices [Internet]. Journal of Physics:Condensed Matter. 2001 ; 13 3381-3387.[citado 2024 ago. 28 ] Available from: https://doi.org/10.1088/0953-8984/13/14/311
Trabalho de evento-resumo
Inter and intraband transitions in cubic nitride quantum wells (2001)
Sipahi, Guilherme Matos; Rodrigues, S C P; Scolfaro, L M R; Leite, J. R.
Source: Program and abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIPAHI, Guilherme Matos et al. Inter and intraband transitions in cubic nitride quantum wells. 2001, Anais.. Guarujá: Instituto de Física de São Carlos, Universidade de São Paulo, 2001. . Acesso em: 28 ago. 2024.
APA
Sipahi, G. M., Rodrigues, S. C. P., Scolfaro, L. M. R., & Leite, J. R. (2001). Inter and intraband transitions in cubic nitride quantum wells. In Program and abstracts. Guarujá: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Leite JR. Inter and intraband transitions in cubic nitride quantum wells. Program and abstracts. 2001 ;[citado 2024 ago. 28 ]
Vancouver
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Leite JR. Inter and intraband transitions in cubic nitride quantum wells. Program and abstracts. 2001 ;[citado 2024 ago. 28 ]
Artigo de periodico
Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells (2001)
Rodrigues, S C P; Sipahi, Guilherme Matos; Scolfaro, L M R; Leite, J. R.
Source: Physica B. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, S C P et al. Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells. Physica B, v. 302-303, p. 106-113, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0921-4526(01)00413-6. Acesso em: 28 ago. 2024.
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2001). Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells. Physica B, 302-303, 106-113. doi:10.1016/s0921-4526(01)00413-6
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells [Internet]. Physica B. 2001 ;302-303 106-113.[citado 2024 ago. 28 ] Available from: https://doi.org/10.1016/s0921-4526(01)00413-6
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells [Internet]. Physica B. 2001 ;302-303 106-113.[citado 2024 ago. 28 ] Available from: https://doi.org/10.1016/s0921-4526(01)00413-6

USP Schools

ReP

Filtros

Authors