Electronic structure of oxygen-related complex defects in silicon (1985)
Fonte: Proceedings. Nome do evento: Brazilian School on Physics. Unidade: IF
ABNT
GOMES, V M S e LEITE, J. R. Electronic structure of oxygen-related complex defects in silicon. 1985, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 1985. . Acesso em: 02 nov. 2025.APA
Gomes, V. M. S., & Leite, J. R. (1985). Electronic structure of oxygen-related complex defects in silicon. In Proceedings. São Paulo: Instituto de Física, Universidade de São Paulo.NLM
Gomes VMS, Leite JR. Electronic structure of oxygen-related complex defects in silicon. Proceedings. 1985 ;[citado 2025 nov. 02 ]Vancouver
Gomes VMS, Leite JR. Electronic structure of oxygen-related complex defects in silicon. Proceedings. 1985 ;[citado 2025 nov. 02 ]
