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Filtros : "IF" "SEMICONDUTORES" Removido: "ASSALI, LUCY VITORIA CREDIDIO" Limpar

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  • Artigo de periodico

    Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots (2025)

    Brubach, J. ; Huang, T.-Y. ; Borrely, T ; Greenhill, C ; Walrath, J ; Fedele, G; Yang, Y.-C. ; Zimmerman, A. ; Goldman, R. S.

    Source: Applied Physics Letters. Unidade: IF

    Subjects: DISPOSITIVOS ELETRÔNICOS, SEMICONDUTORES, POÇOS QUÂNTICOS

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      BRUBACH, J. et al. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0244331. Acesso em: 02 nov. 2025.

    • APA

      Brubach, J., Huang, T. -Y., Borrely, T., Greenhill, C., Walrath, J., Fedele, G., et al. (2025). Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters. doi:https://doi.org/10.1063/5.0244331

    • NLM

      Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 02 ] Available from: https://doi.org/10.1063/5.0244331

    • Vancouver

      Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 02 ] Available from: https://doi.org/10.1063/5.0244331

  • Trabalho de evento-resumo

    Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels (2025)

    Pusep, Yuri A ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat

    Source: Program. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidades: IFSC, IF

    Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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      PUSEP, Yuri A et al. Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels. 2025, Anais.. Singapore: International Union of Pure and Applied Physics - IUPAP, 2025. Disponível em: https://airdrive.eventsair.com/eventsaircaneprod/production-uottawacpd-public/71c8921a310a4f29b442df16673af070. Acesso em: 02 nov. 2025.

    • APA

      Pusep, Y. A., Patricio, M. A. T., Jacobsen, G. M., Teodoro, M. D., Gusev, G., & Bakarov, A. (2025). Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels. In Program. Singapore: International Union of Pure and Applied Physics - IUPAP. Recuperado de https://airdrive.eventsair.com/eventsaircaneprod/production-uottawacpd-public/71c8921a310a4f29b442df16673af070

    • NLM

      Pusep YA, Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels [Internet]. Program. 2025 ;[citado 2025 nov. 02 ] Available from: https://airdrive.eventsair.com/eventsaircaneprod/production-uottawacpd-public/71c8921a310a4f29b442df16673af070

    • Vancouver

      Pusep YA, Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels [Internet]. Program. 2025 ;[citado 2025 nov. 02 ] Available from: https://airdrive.eventsair.com/eventsaircaneprod/production-uottawacpd-public/71c8921a310a4f29b442df16673af070

  • Trabalho de evento-resumo

    Hydrodynamics of electron-hole Coulomb drag (2025)

    Pusep, Yuri A ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat

    Source: Abstract Book. Conference titles: International Conference on Nanomaterials Science and Mechanical Engineering. Unidades: IFSC, IF

    Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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      PUSEP, Yuri A et al. Hydrodynamics of electron-hole Coulomb drag. 2025, Anais.. Aveiro: Universidade de Aveiro, 2025. Disponível em: https://repositorio.usp.br/directbitstream/b3adc728-9813-4e4d-8c57-ffbb9ee43524/3267491.pdf. Acesso em: 02 nov. 2025.

    • APA

      Pusep, Y. A., Patricio, M. A. T., Jacobsen, G. M., Teodoro, M. D., Gusev, G., & Bakarov, A. (2025). Hydrodynamics of electron-hole Coulomb drag. In Abstract Book. Aveiro: Universidade de Aveiro. Recuperado de https://repositorio.usp.br/directbitstream/b3adc728-9813-4e4d-8c57-ffbb9ee43524/3267491.pdf

    • NLM

      Pusep YA, Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole Coulomb drag [Internet]. Abstract Book. 2025 ;[citado 2025 nov. 02 ] Available from: https://repositorio.usp.br/directbitstream/b3adc728-9813-4e4d-8c57-ffbb9ee43524/3267491.pdf

    • Vancouver

      Pusep YA, Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole Coulomb drag [Internet]. Abstract Book. 2025 ;[citado 2025 nov. 02 ] Available from: https://repositorio.usp.br/directbitstream/b3adc728-9813-4e4d-8c57-ffbb9ee43524/3267491.pdf

  • Artigo de periodico

    Hydrodynamics of electron-hole Coulomb drag (2025)

    Pusep, Yuri A ; Patricio, Marco Antonio Tito ; Glazov, Mikhail ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat

    Source: Physical Review Research. Unidades: IFSC, IF

    Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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      PUSEP, Yuri A et al. Hydrodynamics of electron-hole Coulomb drag. Physical Review Research, v. 7, n. 4, p. 043062-1-043062-8, 2025Tradução . . Disponível em: https://doi.org/10.1103/71yh-kprh. Acesso em: 02 nov. 2025.

    • APA

      Pusep, Y. A., Patricio, M. A. T., Glazov, M., Jacobsen, G. M., Teodoro, M. D., Gusev, G., & Bakarov, A. (2025). Hydrodynamics of electron-hole Coulomb drag. Physical Review Research, 7( 4), 043062-1-043062-8. doi:10.1103/71yh-kprh

    • NLM

      Pusep YA, Patricio MAT, Glazov M, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole Coulomb drag [Internet]. Physical Review Research. 2025 ; 7( 4): 043062-1-043062-8.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/71yh-kprh

    • Vancouver

      Pusep YA, Patricio MAT, Glazov M, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole Coulomb drag [Internet]. Physical Review Research. 2025 ; 7( 4): 043062-1-043062-8.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/71yh-kprh

  • Artigo de periodico

    Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects (2024)

    Sandoval, Marcelo Alejandro Toloza ; Padilla, Jhon Elber Leon ; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos ; Chubaci, José Fernando Diniz ; Silva, Antonio Ferreira da

    Source: Journal of Applied Physics. Unidades: IFSC, IF

    Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES

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      SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 02 nov. 2025.

    • APA

      Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962

    • NLM

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1063/5.0187962

    • Vancouver

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1063/5.0187962

  • Artigo de periodico

    Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel (2024)

    Pusep, Yuri A ; Teodoro, Marcio Daldin ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Gusev, Gennady ; Bakarov, Askhat

    Source: Physical Review B. Unidades: IFSC, IF

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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      PUSEP, Yuri A et al. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, v. 109, n. 7, p. 075429-1-075429-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.075429. Acesso em: 02 nov. 2025.

    • APA

      Pusep, Y. A., Teodoro, M. D., Patricio, M. A. T., Jacobsen, G. M., Gusev, G., & Bakarov, A. (2024). Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, 109( 7), 075429-1-075429-6. doi:10.1103/PhysRevB.109.075429

    • NLM

      Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429

    • Vancouver

      Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429

  • Artigo de periodico

    Magnetic field breakdown of electron hydrodynamics (2024)

    Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Oliveira, Vinicius Andrade de ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat ; Pusep, Yuri A

    Source: Physical Review B. Unidades: IF, IFSC

    Subjects: FOTOLUMINESCÊNCIA, CAMPO ELETROMAGNÉTICO, SEMICONDUTORES

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      PATRICIO, Marco Antonio Tito et al. Magnetic field breakdown of electron hydrodynamics. Physical Review B, v. 110, n. 4, p. 45411-1-45411-5, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.110.045411. Acesso em: 02 nov. 2025.

    • APA

      Patricio, M. A. T., Jacobsen, G. M., Oliveira, V. A. de, Teodoro, M. D., Gusev, G., Bakarov, A., & Pusep, Y. A. (2024). Magnetic field breakdown of electron hydrodynamics. Physical Review B, 110( 4), 45411-1-45411-5. doi:10.1103/PhysRevB.110.045411

    • NLM

      Patricio MAT, Jacobsen GM, Oliveira VA de, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Magnetic field breakdown of electron hydrodynamics [Internet]. Physical Review B. 2024 ; 110( 4): 45411-1-45411-5.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevB.110.045411

    • Vancouver

      Patricio MAT, Jacobsen GM, Oliveira VA de, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Magnetic field breakdown of electron hydrodynamics [Internet]. Physical Review B. 2024 ; 110( 4): 45411-1-45411-5.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevB.110.045411

  • Artigo de periodico

    Impact of symmetry breaking and spin-orbit coupling on the band gap of halide perovskites (2024)

    Sabino, Fernando Pereira ; Zhao, Xin Gang; Dalpian, Gustavo Martini ; Zunger, Alex

    Source: Physical Review B. Unidade: IF

    Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES

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      SABINO, Fernando Pereira et al. Impact of symmetry breaking and spin-orbit coupling on the band gap of halide perovskites. Physical Review B, v. 110, n. 3, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.110.035160. Acesso em: 02 nov. 2025.

    • APA

      Sabino, F. P., Zhao, X. G., Dalpian, G. M., & Zunger, A. (2024). Impact of symmetry breaking and spin-orbit coupling on the band gap of halide perovskites. Physical Review B, 110( 3). doi:10.1103/PhysRevB.110.035160

    • NLM

      Sabino FP, Zhao XG, Dalpian GM, Zunger A. Impact of symmetry breaking and spin-orbit coupling on the band gap of halide perovskites [Internet]. Physical Review B. 2024 ; 110( 3):[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevB.110.035160

    • Vancouver

      Sabino FP, Zhao XG, Dalpian GM, Zunger A. Impact of symmetry breaking and spin-orbit coupling on the band gap of halide perovskites [Internet]. Physical Review B. 2024 ; 110( 3):[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevB.110.035160

  • Artigo de periodico

    Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel (2024)

    Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat ; Pusep, Yuri A

    Source: Physical Review B. Unidades: IF, IFSC

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO

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      PATRICIO, Marco Antonio Tito et al. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel. Physical Review B, v. 109, n. 12, p. L121401-1-L121401-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.L121401. Acesso em: 02 nov. 2025.

    • APA

      Patricio, M. A. T., Jacobsen, G. M., Teodoro, M. D., Gusev, G., Bakarov, A., & Pusep, Y. A. (2024). Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel. Physical Review B, 109( 12), L121401-1-L121401-6. doi:10.1103/PhysRevB.109.L121401

    • NLM

      Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel [Internet]. Physical Review B. 2024 ; 109( 12): L121401-1-L121401-6.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevB.109.L121401

    • Vancouver

      Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel [Internet]. Physical Review B. 2024 ; 109( 12): L121401-1-L121401-6.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevB.109.L121401

  • Curadoria

    Encontro de Outono da Sociedade Brasileira de Física – EOSBF (2024)

    Coutinho, Kaline Rabelo (cur) ; Miranda, Paulo Barbeitas (cur) ; Santos, Carlos Eduardo Fiore dos (cur) ; Marcassa, Luís Gustavo (cur) ; Oliveira, Cristiano Luis Pinto (cur) ; Canal, Gustavo Paganini (cur) ; De Boni, Leonardo (cur) ; Rizzo, Luciana Varanda (cur)

    Unidades: IF, IFSC

    Subjects: FÍSICA ATÔMICA, ESTATÍSTICA COMPUTACIONAL, CIÊNCIA DA COMPUTAÇÃO, SEMICONDUTORES, MAGNETISMO, FÍSICA MODERNA

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      Encontro de Outono da Sociedade Brasileira de Física – EOSBF. . São Paulo: Sociedade Brasileira de Física - SBF. . Acesso em: 02 nov. 2025. , 2024

    • APA

      Encontro de Outono da Sociedade Brasileira de Física – EOSBF. (2024). Encontro de Outono da Sociedade Brasileira de Física – EOSBF. São Paulo: Sociedade Brasileira de Física - SBF.

    • NLM

      Encontro de Outono da Sociedade Brasileira de Física – EOSBF. 2024 ;[citado 2025 nov. 02 ]

    • Vancouver

      Encontro de Outono da Sociedade Brasileira de Física – EOSBF. 2024 ;[citado 2025 nov. 02 ]

  • Artigo de periodico

    Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure (2023)

    Izquierdo, Jose Enrique Eirez ; Cavallari, Marco Roberto ; García, Dennis Cabrera ; Fonseca, Fernando Josepetti ; Quivy, Alain André

    Source: Sensors. Unidades: EP, IF

    Subjects: SEMICONDUTORES, FILMES FINOS, ESPECTROSCOPIA

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      IZQUIERDO, Jose Enrique Eirez et al. Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure. Sensors, v. 23, n. 18, 2023Tradução . . Disponível em: https://doi.org/10.3390/s23187981. Acesso em: 02 nov. 2025.

    • APA

      Izquierdo, J. E. E., Cavallari, M. R., García, D. C., Fonseca, F. J., & Quivy, A. A. (2023). Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure. Sensors, 23( 18). doi:10.3390/s23187981

    • NLM

      Izquierdo JEE, Cavallari MR, García DC, Fonseca FJ, Quivy AA. Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure [Internet]. Sensors. 2023 ; 23( 18):[citado 2025 nov. 02 ] Available from: https://doi.org/10.3390/s23187981

    • Vancouver

      Izquierdo JEE, Cavallari MR, García DC, Fonseca FJ, Quivy AA. Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure [Internet]. Sensors. 2023 ; 23( 18):[citado 2025 nov. 02 ] Available from: https://doi.org/10.3390/s23187981

  • Artigo de periodico

    Multifractal conductance fluctuations of helical edge states (2023)

    Olshanetsky, E. B.; Gusev, Gennady ; Levine, Alexandre ; Kvon, Z. D.; Armand, Johnnier Perez

    Source: Physical Review Letters. Unidade: IF

    Assunto: SEMICONDUTORES

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      OLSHANETSKY, E. B. et al. Multifractal conductance fluctuations of helical edge states. Physical Review Letters, v. 131, n. 7, p. 076301, 2023Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.131.076301. Acesso em: 02 nov. 2025.

    • APA

      Olshanetsky, E. B., Gusev, G., Levine, A., Kvon, Z. D., & Armand, J. P. (2023). Multifractal conductance fluctuations of helical edge states. Physical Review Letters, 131( 7), 076301. doi:10.1103/PhysRevLett.131.076301

    • NLM

      Olshanetsky EB, Gusev G, Levine A, Kvon ZD, Armand JP. Multifractal conductance fluctuations of helical edge states [Internet]. Physical Review Letters. 2023 ; 131( 7): 076301.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevLett.131.076301

    • Vancouver

      Olshanetsky EB, Gusev G, Levine A, Kvon ZD, Armand JP. Multifractal conductance fluctuations of helical edge states [Internet]. Physical Review Letters. 2023 ; 131( 7): 076301.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevLett.131.076301

  • Trabalho de evento

    On the importance of atom probe tomography for the development of new nanoscale devices (2022)

    Santos, Thales Borrely dos ; Huang, Tao-Yu; Yang, Yu-Chen; Goldman, Rachel S; Quivy, Alain André

    Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF

    Subjects: TOMOGRAFIA, SEMICONDUTORES

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      SANTOS, Thales Borrely dos et al. On the importance of atom probe tomography for the development of new nanoscale devices. 2022, Anais.. New York: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881039. Acesso em: 02 nov. 2025.

    • APA

      Santos, T. B. dos, Huang, T. -Y., Yang, Y. -C., Goldman, R. S., & Quivy, A. A. (2022). On the importance of atom probe tomography for the development of new nanoscale devices. In . New York: IEEE. doi:10.1109/SBMICRO55822.2022.9881039

    • NLM

      Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2025 nov. 02 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039

    • Vancouver

      Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2025 nov. 02 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039

  • Artigo de periodico

    Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET (2022)

    Alberton, S. G. ; Aguiar, Vitor^Ângelo Paulino de ; Medina, Nilberto H. ; Added, Nemitala ; Macchione, E L A ; Menegasso, R. ; Cesário, G. J.; Santos, Hellen Cristine ; Scarduelli, V B ; Alcántara-Núñez, J. A.; Guazzelli, M. A.; Santos, R. B. B.; Flechas, D.

    Source: Microelectronics Reliability. Unidade: IF

    Subjects: FÍSICA NUCLEAR, ÍONS PESADOS, SEMICONDUTORES

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      ALBERTON, S. G. et al. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, v. 137, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2022.114784. Acesso em: 02 nov. 2025.

    • APA

      Alberton, S. G., Aguiar, V. ^Â. P. de, Medina, N. H., Added, N., Macchione, E. L. A., Menegasso, R., et al. (2022). Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, 137. doi:10.1016/j.microrel.2022.114784

    • NLM

      Alberton SG, Aguiar V^ÂP de, Medina NH, Added N, Macchione ELA, Menegasso R, Cesário GJ, Santos HC, Scarduelli VB, Alcántara-Núñez JA, Guazzelli MA, Santos RBB, Flechas D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET [Internet]. Microelectronics Reliability. 2022 ; 137[citado 2025 nov. 02 ] Available from: https://doi.org/10.1016/j.microrel.2022.114784

    • Vancouver

      Alberton SG, Aguiar V^ÂP de, Medina NH, Added N, Macchione ELA, Menegasso R, Cesário GJ, Santos HC, Scarduelli VB, Alcántara-Núñez JA, Guazzelli MA, Santos RBB, Flechas D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET [Internet]. Microelectronics Reliability. 2022 ; 137[citado 2025 nov. 02 ] Available from: https://doi.org/10.1016/j.microrel.2022.114784

  • Artigo de periodico

    Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides (2022)

    Darriba, G N ; Muñoz, Emiliano L ; Richard, Diego ; Ayala, Alejandro Pedro ; Carbonari, A W ; Petrilli, Helena Maria ; Renteria, M

    Source: Physical Review B. Unidade: IF

    Assunto: SEMICONDUTORES

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      DARRIBA, G N et al. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides. Physical Review B, v. 105, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.105.195201. Acesso em: 02 nov. 2025.

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      Darriba, G. N., Muñoz, E. L., Richard, D., Ayala, A. P., Carbonari, A. W., Petrilli, H. M., & Renteria, M. (2022). Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides. Physical Review B, 105. doi:10.1103/PhysRevB.105.195201

    • NLM

      Darriba GN, Muñoz EL, Richard D, Ayala AP, Carbonari AW, Petrilli HM, Renteria M. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides [Internet]. Physical Review B. 2022 ; 105[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevB.105.195201

    • Vancouver

      Darriba GN, Muñoz EL, Richard D, Ayala AP, Carbonari AW, Petrilli HM, Renteria M. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides [Internet]. Physical Review B. 2022 ; 105[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevB.105.195201

  • Artigo de periodico

    Excitonic effects in graphene-like C3N (2022)

    Bonacci, Miki ; Zanfrognini, Matteo ; Molinari, Elisa ; Ruini, Alice; Caldas, Marilia Junqueira ; Ferretti, Andrea ; Varsano, Daniele

    Source: Physical Review Materials. Unidade: IF

    Assunto: SEMICONDUTORES

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      BONACCI, Miki et al. Excitonic effects in graphene-like C3N. Physical Review Materials, v. 6, n. 3, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.6.034009. Acesso em: 02 nov. 2025.

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      Bonacci, M., Zanfrognini, M., Molinari, E., Ruini, A., Caldas, M. J., Ferretti, A., & Varsano, D. (2022). Excitonic effects in graphene-like C3N. Physical Review Materials, 6( 3). doi:10.1103/PhysRevMaterials.6.034009

    • NLM

      Bonacci M, Zanfrognini M, Molinari E, Ruini A, Caldas MJ, Ferretti A, Varsano D. Excitonic effects in graphene-like C3N [Internet]. Physical Review Materials. 2022 ; 6( 3):[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.034009

    • Vancouver

      Bonacci M, Zanfrognini M, Molinari E, Ruini A, Caldas MJ, Ferretti A, Varsano D. Excitonic effects in graphene-like C3N [Internet]. Physical Review Materials. 2022 ; 6( 3):[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.034009

  • Relatorio tecnico

    Investigation of role of antisite disorder in the pristine cage compound 'FE''GA' IND. 3' (2022)

    Ribeiro, Cauê Kaufmann ; Mello, Luiz Adolfo de; Cornejo, Daniel Reinaldo ; Silva Neto, M. B.; Fogh, E.; Rønnow, H. M.; Martelli, Valentina ; Jiménez, Julio Antonio Larrea

    Unidade: IF

    Subjects: SEMICONDUTORES, PARAMAGNETISMO

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      RIBEIRO, Cauê Kaufmann et al. Investigation of role of antisite disorder in the pristine cage compound 'FE''GA' IND. 3'. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/ftp/arxiv/papers/2208/2208.09064.pdf. Acesso em: 02 nov. 2025. , 2022

    • APA

      Ribeiro, C. K., Mello, L. A. de, Cornejo, D. R., Silva Neto, M. B., Fogh, E., Rønnow, H. M., et al. (2022). Investigation of role of antisite disorder in the pristine cage compound 'FE''GA' IND. 3'. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/ftp/arxiv/papers/2208/2208.09064.pdf

    • NLM

      Ribeiro CK, Mello LA de, Cornejo DR, Silva Neto MB, Fogh E, Rønnow HM, Martelli V, Jiménez JAL. Investigation of role of antisite disorder in the pristine cage compound 'FE''GA' IND. 3' [Internet]. 2022 ;[citado 2025 nov. 02 ] Available from: https://arxiv.org/ftp/arxiv/papers/2208/2208.09064.pdf

    • Vancouver

      Ribeiro CK, Mello LA de, Cornejo DR, Silva Neto MB, Fogh E, Rønnow HM, Martelli V, Jiménez JAL. Investigation of role of antisite disorder in the pristine cage compound 'FE''GA' IND. 3' [Internet]. 2022 ;[citado 2025 nov. 02 ] Available from: https://arxiv.org/ftp/arxiv/papers/2208/2208.09064.pdf

  • Artigo de periodico

    A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry (2021)

    Malafronte, A. A.; Petri, A. R.; Gonçalves, J. A. C.; Barros, Suelen ; Bueno, Carmen ; Maidana, Nora Lia ; Mangiarotti, Alessio ; Martins, Marcos ; Quivy, Alain André ; Vanin, Vito

    Source: Radiation Physics and Chemistry. Unidades: IF, IPEN

    Subjects: FOTODETECTORES, SEMICONDUTORES, DIODOS, ESPECTROSCOPIA DE RAIO GAMA, ESPECTROSCOPIA DE RAIO X, SILÍCIO

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      MALAFRONTE, A. A. et al. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. Radiation Physics and Chemistry, v. 179, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.radphyschem.2020.109103. Acesso em: 02 nov. 2025.

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      Malafronte, A. A., Petri, A. R., Gonçalves, J. A. C., Barros, S., Bueno, C., Maidana, N. L., et al. (2021). A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. Radiation Physics and Chemistry, 179. doi:10.1016/j.radphyschem.2020.109103

    • NLM

      Malafronte AA, Petri AR, Gonçalves JAC, Barros S, Bueno C, Maidana NL, Mangiarotti A, Martins M, Quivy AA, Vanin V. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry [Internet]. Radiation Physics and Chemistry. 2021 ; 179[citado 2025 nov. 02 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109103

    • Vancouver

      Malafronte AA, Petri AR, Gonçalves JAC, Barros S, Bueno C, Maidana NL, Mangiarotti A, Martins M, Quivy AA, Vanin V. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry [Internet]. Radiation Physics and Chemistry. 2021 ; 179[citado 2025 nov. 02 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109103

  • Relatorio tecnico

    Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors (2020)

    Silva, Antonio Jose Roque da ; Santos, Raimundo R. dos; Oliveira, Luiz E.; Fazzio, Adalberto

    Unidade: IF

    Subjects: SEMICONDUTORES, FERROMAGNETISMO

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      SILVA, Antonio Jose Roque da et al. Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0505500.pdf. Acesso em: 02 nov. 2025. , 2020

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      Silva, A. J. R. da, Santos, R. R. dos, Oliveira, L. E., & Fazzio, A. (2020). Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0505500.pdf

    • NLM

      Silva AJR da, Santos RR dos, Oliveira LE, Fazzio A. Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors [Internet]. 2020 ;[citado 2025 nov. 02 ] Available from: https://arxiv.org/pdf/cond-mat/0505500.pdf

    • Vancouver

      Silva AJR da, Santos RR dos, Oliveira LE, Fazzio A. Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors [Internet]. 2020 ;[citado 2025 nov. 02 ] Available from: https://arxiv.org/pdf/cond-mat/0505500.pdf

  • Relatorio tecnico

    Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films (2020)

    Morelhão, Sergio Luiz ; Kycia, Stefan; Netzke, Samuel; Fornari, Celso I.; Rappl, Paulo H. O.; Abramof, Eduardo

    Unidade: IF

    Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X

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      MORELHÃO, Sergio Luiz et al. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. . Melville: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/2007.15042.pdf. Acesso em: 02 nov. 2025. , 2020

    • APA

      Morelhão, S. L., Kycia, S., Netzke, S., Fornari, C. I., Rappl, P. H. O., & Abramof, E. (2020). Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. Melville: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/2007.15042.pdf

    • NLM

      Morelhão SL, Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films [Internet]. 2020 ;[citado 2025 nov. 02 ] Available from: https://arxiv.org/pdf/2007.15042.pdf

    • Vancouver

      Morelhão SL, Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films [Internet]. 2020 ;[citado 2025 nov. 02 ] Available from: https://arxiv.org/pdf/2007.15042.pdf

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