Source: JOURNAL OF APPLIED PHYSICS. Unidade: IF
Subjects: SEMICONDUTORES, RAIOS X
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FORNARI, Celso I. et al. Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates. JOURNAL OF APPLIED PHYSICS, v. 119, n. 16, p. 165303, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4947266. Acesso em: 07 ago. 2024.APA
Fornari, C. I., Rappl, P. H. O., Abramof, E., & Morelhao, S. L. (2016). Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates. JOURNAL OF APPLIED PHYSICS, 119( 16), 165303. doi:10.1063/1.4947266NLM
Fornari CI, Rappl PHO, Abramof E, Morelhao SL. Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates [Internet]. JOURNAL OF APPLIED PHYSICS. 2016 ; 119( 16): 165303.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1063/1.4947266Vancouver
Fornari CI, Rappl PHO, Abramof E, Morelhao SL. Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates [Internet]. JOURNAL OF APPLIED PHYSICS. 2016 ; 119( 16): 165303.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1063/1.4947266
