ReP USP - Resultado da busca

Trabalho de evento
Nitrogen antisite defect in zincblende-type boron nitride (1996)
Castineira, J L P; Leite, J. R.; Scolfaro, L M R; Enderlein, R; Alves, J L A; Kajaj, K K
Source: Anais. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CASTINEIRA, J L P et al. Nitrogen antisite defect in zincblende-type boron nitride. 1996, Anais.. Singapore: World Scientific, 1996. . Acesso em: 29 set. 2024.
APA
Castineira, J. L. P., Leite, J. R., Scolfaro, L. M. R., Enderlein, R., Alves, J. L. A., & Kajaj, K. K. (1996). Nitrogen antisite defect in zincblende-type boron nitride. In Anais. Singapore: World Scientific.
NLM
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves JLA, Kajaj KK. Nitrogen antisite defect in zincblende-type boron nitride. Anais. 1996 ;[citado 2024 set. 29 ]
Vancouver
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves JLA, Kajaj KK. Nitrogen antisite defect in zincblende-type boron nitride. Anais. 1996 ;[citado 2024 set. 29 ]
Parte de monografia/livro
Band structure and surface geometry of 'AL''AS' (110) (1992)
Grossi, A C A S; Alves, J L A; Ferraz, A. C.
Source: Brazilian School Semiconductor Physics, 5. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GROSSI, A C A S e ALVES, J L A e FERRAZ, A. C. Band structure and surface geometry of 'AL''AS' (110). Brazilian School Semiconductor Physics, 5. Tradução . Singapura: World Scientific, 1992. . . Acesso em: 29 set. 2024.
APA
Grossi, A. C. A. S., Alves, J. L. A., & Ferraz, A. C. (1992). Band structure and surface geometry of 'AL''AS' (110). In Brazilian School Semiconductor Physics, 5. Singapura: World Scientific.
NLM
Grossi ACAS, Alves JLA, Ferraz AC. Band structure and surface geometry of 'AL''AS' (110). In: Brazilian School Semiconductor Physics, 5. Singapura: World Scientific; 1992. [citado 2024 set. 29 ]
Vancouver
Grossi ACAS, Alves JLA, Ferraz AC. Band structure and surface geometry of 'AL''AS' (110). In: Brazilian School Semiconductor Physics, 5. Singapura: World Scientific; 1992. [citado 2024 set. 29 ]
Parte de monografia/livro
One-electron states induced by 3d-transition metal impurities in diamond (1992)
Alves, H W L; Alves, J L A; Leite, J. R.
Source: 3rd School on Instrumentation in Elementary Particle Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H W L e ALVES, J L A e LEITE, J. R. One-electron states induced by 3d-transition metal impurities in diamond. 3rd School on Instrumentation in Elementary Particle Physics. Tradução . Singapore: World Scientific, 1992. . . Acesso em: 29 set. 2024.
APA
Alves, H. W. L., Alves, J. L. A., & Leite, J. R. (1992). One-electron states induced by 3d-transition metal impurities in diamond. In 3rd School on Instrumentation in Elementary Particle Physics. Singapore: World Scientific.
NLM
Alves HWL, Alves JLA, Leite JR. One-electron states induced by 3d-transition metal impurities in diamond. In: 3rd School on Instrumentation in Elementary Particle Physics. Singapore: World Scientific; 1992. [citado 2024 set. 29 ]
Vancouver
Alves HWL, Alves JLA, Leite JR. One-electron states induced by 3d-transition metal impurities in diamond. In: 3rd School on Instrumentation in Elementary Particle Physics. Singapore: World Scientific; 1992. [citado 2024 set. 29 ]
Trabalho de evento-resumo
Microscopic models for 'AU'-'AU' and 'PT'-'PT' pair complexes in silicon (1990)
Alves, J L A; Chacham, H; Leite, J. R.
Conference titles: Brazilian School of Semiconductors Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, J L A e CHACHAM, H e LEITE, J. R. Microscopic models for 'AU'-'AU' and 'PT'-'PT' pair complexes in silicon. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 29 set. 2024.
APA
Alves, J. L. A., Chacham, H., & Leite, J. R. (1990). Microscopic models for 'AU'-'AU' and 'PT'-'PT' pair complexes in silicon. In . Singapure: World Scientific.
NLM
Alves JLA, Chacham H, Leite JR. Microscopic models for 'AU'-'AU' and 'PT'-'PT' pair complexes in silicon. 1990 ;[citado 2024 set. 29 ]
Vancouver
Alves JLA, Chacham H, Leite JR. Microscopic models for 'AU'-'AU' and 'PT'-'PT' pair complexes in silicon. 1990 ;[citado 2024 set. 29 ]
Trabalho de evento-resumo
Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium (1990)
Alves, H W L; Leite, J. R.; Alves, J L A
Conference titles: Brazilian School on Semiconductors Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H W L e LEITE, J. R. e ALVES, J L A. Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 29 set. 2024.
APA
Alves, H. W. L., Leite, J. R., & Alves, J. L. A. (1990). Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium. In . Singapure: World Scientific.
NLM
Alves HWL, Leite JR, Alves JLA. Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium. 1990 ;[citado 2024 set. 29 ]
Vancouver
Alves HWL, Leite JR, Alves JLA. Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium. 1990 ;[citado 2024 set. 29 ]
Parte de monografia/livro
Deep levels induced by 3d-transition metal impurities in diamond (1988)
Alves, H W L; Leite, J. R.; Alves, J L A
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H W L e LEITE, J. R. e ALVES, J L A. Deep levels induced by 3d-transition metal impurities in diamond. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 29 set. 2024.
APA
Alves, H. W. L., Leite, J. R., & Alves, J. L. A. (1988). Deep levels induced by 3d-transition metal impurities in diamond. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d-transition metal impurities in diamond. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 set. 29 ]
Vancouver
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d-transition metal impurities in diamond. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 set. 29 ]
Trabalho de evento-resumo
Deep levels induced by 3d transition metal impurities in diamond (1988)
Alves, H W L; Leite, J. R.; Alves, J L A
Source: Proceedings. Conference titles: Escola Brasileira de Fisica de Semicondutores. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H W L e LEITE, J. R. e ALVES, J L A. Deep levels induced by 3d transition metal impurities in diamond. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 29 set. 2024.
APA
Alves, H. W. L., Leite, J. R., & Alves, J. L. A. (1988). Deep levels induced by 3d transition metal impurities in diamond. In Proceedings. Singapore: World Scientific.
NLM
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d transition metal impurities in diamond. Proceedings. 1988 ;[citado 2024 set. 29 ]
Vancouver
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d transition metal impurities in diamond. Proceedings. 1988 ;[citado 2024 set. 29 ]

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