Source: Opto-Electronics Review. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA
ABNT
BRAGA FILHO, Osvaldo Moraes et al. Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP. Opto-Electronics Review, v. 31, p. e144562-1-e144562-6, 2023Tradução . . Disponível em: https://doi.org/10.24425/opelre.2023.144562. Acesso em: 28 ago. 2024.APA
Braga Filho, O. M., Delfino, C. A., Kawabata, R. M. S., Pinto, L. D., Vieira, G. S., Pires, M. P., et al. (2023). Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP. Opto-Electronics Review, 31, e144562-1-e144562-6. doi:10.24425/opelre.2023.144562NLM
Braga Filho OM, Delfino CA, Kawabata RMS, Pinto LD, Vieira GS, Pires MP, Souza PL de, Marega Júnior E, Carlin JA, Krishna S. Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP [Internet]. Opto-Electronics Review. 2023 ; 31 e144562-1-e144562-6.[citado 2024 ago. 28 ] Available from: https://doi.org/10.24425/opelre.2023.144562Vancouver
Braga Filho OM, Delfino CA, Kawabata RMS, Pinto LD, Vieira GS, Pires MP, Souza PL de, Marega Júnior E, Carlin JA, Krishna S. Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP [Internet]. Opto-Electronics Review. 2023 ; 31 e144562-1-e144562-6.[citado 2024 ago. 28 ] Available from: https://doi.org/10.24425/opelre.2023.144562