Analysis of the mean crystallite size and microstress in titanium silicide thin films (1992)
Source: Journal of Vacuum Science and Technology. B. Microelectronics Processing and Phenomena. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
ABNT
MORIMOTO, Nilton Itiro e SWART, Jacobus Willibrordus e RIELLA, Humberto Gracher. Analysis of the mean crystallite size and microstress in titanium silicide thin films. Journal of Vacuum Science and Technology. B. Microelectronics Processing and Phenomena, v. 10, n. 2 , p. 586-90, 1992Tradução . . Disponível em: https://doi.org/10.1016/0169-4332(89)90517-5. Acesso em: 19 abr. 2024.APA
Morimoto, N. I., Swart, J. W., & Riella, H. G. (1992). Analysis of the mean crystallite size and microstress in titanium silicide thin films. Journal of Vacuum Science and Technology. B. Microelectronics Processing and Phenomena, 10( 2 ), 586-90. doi:10.1016/0169-4332(89)90517-5NLM
Morimoto NI, Swart JW, Riella HG. Analysis of the mean crystallite size and microstress in titanium silicide thin films [Internet]. Journal of Vacuum Science and Technology. B. Microelectronics Processing and Phenomena. 1992 ;10( 2 ): 586-90.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1016/0169-4332(89)90517-5Vancouver
Morimoto NI, Swart JW, Riella HG. Analysis of the mean crystallite size and microstress in titanium silicide thin films [Internet]. Journal of Vacuum Science and Technology. B. Microelectronics Processing and Phenomena. 1992 ;10( 2 ): 586-90.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1016/0169-4332(89)90517-5