Source: Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Conference titles: Symposium Silicon-on-Insulator Technology and Devices. Unidade: EP
Subjects: MICROELETRÔNICA, CIRCUITOS INTEGRADOS
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Tradução . Pennington: The Electrochemical Society, 1997. . . Acesso em: 28 mar. 2024.APA
Pavanello, M. A., & Martino, J. A. (1997). A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Pennington: The Electrochemical Society.NLM
Pavanello MA, Martino JA. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In: Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Pennington: The Electrochemical Society; 1997. [citado 2024 mar. 28 ]Vancouver
Pavanello MA, Martino JA. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In: Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Pennington: The Electrochemical Society; 1997. [citado 2024 mar. 28 ]