Filtros : "MAREGA JUNIOR, EUCLYDES" "Inglaterra" Removido: "2015" Limpar

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  • Source: Nanotechnology. Unidade: IFSC

    Subjects: SEMICONDUTORES, GASES, POÇOS QUÂNTICOS, NANOTECNOLOGIA

    Acesso à fonteDOIHow to cite
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    • ABNT

      LYTVYN, P. M. et al. Engineering of 3D self-directed quantum dot ordering in multilayer in GaAs/GaAs nanostructures by means of flux gas composition. Nanotechnology, v. 19, n. 50, p. 505605-1-505605-7, 2008Tradução . . Disponível em: https://doi.org/10.1088/0957-4484/19/50/505605. Acesso em: 23 ago. 2024.
    • APA

      Lytvyn, P. M., Mazur, Y. I., Marega Júnior, E., Dorogan, V. G., Kladko, V. P., Slobodian, M. V., et al. (2008). Engineering of 3D self-directed quantum dot ordering in multilayer in GaAs/GaAs nanostructures by means of flux gas composition. Nanotechnology, 19( 50), 505605-1-505605-7. doi:10.1088/0957-4484/19/50/505605
    • NLM

      Lytvyn PM, Mazur YI, Marega Júnior E, Dorogan VG, Kladko VP, Slobodian MV, Strelchuk VV, Hussein ML, Ware ME, Salamo GJ. Engineering of 3D self-directed quantum dot ordering in multilayer in GaAs/GaAs nanostructures by means of flux gas composition [Internet]. Nanotechnology. 2008 ; 19( 50): 505605-1-505605-7.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1088/0957-4484/19/50/505605
    • Vancouver

      Lytvyn PM, Mazur YI, Marega Júnior E, Dorogan VG, Kladko VP, Slobodian MV, Strelchuk VV, Hussein ML, Ware ME, Salamo GJ. Engineering of 3D self-directed quantum dot ordering in multilayer in GaAs/GaAs nanostructures by means of flux gas composition [Internet]. Nanotechnology. 2008 ; 19( 50): 505605-1-505605-7.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1088/0957-4484/19/50/505605
  • Source: Nanotechnology. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, FOTOLUMINESCÊNCIA, ÓPTICA (PROPRIEDADES)

    Acesso à fonteDOIHow to cite
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    • ABNT

      ABUWAAR, Ziad Y. et al. In situ photoluminescence study of uncapped in As/GaAs quantum dots. Nanotechnology, v. 19, n. 33, p. 335712-1-335712-4, 2008Tradução . . Disponível em: https://doi.org/10.1088/0957-4484/19/33/335712. Acesso em: 23 ago. 2024.
    • APA

      AbuWaar, Z. Y., Marega Júnior, E., Mortazavi, M., & Salamo, G. J. (2008). In situ photoluminescence study of uncapped in As/GaAs quantum dots. Nanotechnology, 19( 33), 335712-1-335712-4. doi:10.1088/0957-4484/19/33/335712
    • NLM

      AbuWaar ZY, Marega Júnior E, Mortazavi M, Salamo GJ. In situ photoluminescence study of uncapped in As/GaAs quantum dots [Internet]. Nanotechnology. 2008 ; 19( 33): 335712-1-335712-4.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1088/0957-4484/19/33/335712
    • Vancouver

      AbuWaar ZY, Marega Júnior E, Mortazavi M, Salamo GJ. In situ photoluminescence study of uncapped in As/GaAs quantum dots [Internet]. Nanotechnology. 2008 ; 19( 33): 335712-1-335712-4.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1088/0957-4484/19/33/335712
  • Source: Microelectronics Journal. Unidade: IFSC

    Subjects: SEMICONDUTORES, SUPERCONDUTIVIDADE, FOTOLUMINESCÊNCIA

    Acesso à fonteDOIHow to cite
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    • ABNT

      MAREGA JÚNIOR, Euclydes et al. Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces. Microelectronics Journal, v. 35, n. Ja 2004, p. 41-43, 2004Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00221-0. Acesso em: 23 ago. 2024.
    • APA

      Marega Júnior, E., Oliveira, R. M., Souza, C. A., Arakaki, H., & González-Borrero, P. P. (2004). Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces. Microelectronics Journal, 35( Ja 2004), 41-43. doi:10.1016/s0026-2692(03)00221-0
    • NLM

      Marega Júnior E, Oliveira RM, Souza CA, Arakaki H, González-Borrero PP. Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces [Internet]. Microelectronics Journal. 2004 ; 35( Ja 2004): 41-43.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1016/s0026-2692(03)00221-0
    • Vancouver

      Marega Júnior E, Oliveira RM, Souza CA, Arakaki H, González-Borrero PP. Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces [Internet]. Microelectronics Journal. 2004 ; 35( Ja 2004): 41-43.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1016/s0026-2692(03)00221-0

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