Spin-polarized current produced by a double barrier resonant tunneling diode (2003)
Source: Solid State Communications. Unidade: IFSC
Assunto: SEMICONDUTORES
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ABNT
XIA, J. B. e HAI, Guo-Qiang e WANG, J.N. Spin-polarized current produced by a double barrier resonant tunneling diode. Solid State Communications, v. 127, n. 7, p. 489-492, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(03)00451-4. Acesso em: 03 set. 2024.APA
Xia, J. B., Hai, G. -Q., & Wang, J. N. (2003). Spin-polarized current produced by a double barrier resonant tunneling diode. Solid State Communications, 127( 7), 489-492. doi:10.1016/s0038-1098(03)00451-4NLM
Xia JB, Hai G-Q, Wang JN. Spin-polarized current produced by a double barrier resonant tunneling diode [Internet]. Solid State Communications. 2003 ; 127( 7): 489-492.[citado 2024 set. 03 ] Available from: https://doi.org/10.1016/s0038-1098(03)00451-4Vancouver
Xia JB, Hai G-Q, Wang JN. Spin-polarized current produced by a double barrier resonant tunneling diode [Internet]. Solid State Communications. 2003 ; 127( 7): 489-492.[citado 2024 set. 03 ] Available from: https://doi.org/10.1016/s0038-1098(03)00451-4
