Energy states of phosphorous donor in silicon in fields up to 18 T (2010)
Source: Journal of Low Temperature Physics. Unidade: IFSC
Subjects: ENERGIA (ESTADO), SILICIO, ESPECTROSCOPIA, SUPERCONDUTIVIDADE, MATERIAIS ELETRÔNICOS, CAMPO MAGNÉTICO
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ABNT
ALFONSO, A. Bruno et al. Energy states of phosphorous donor in silicon in fields up to 18 T. Journal of Low Temperature Physics, v. 159, n. 1/2, p. 226-229, 2010Tradução . . Disponível em: https://doi.org/10.1007/s10909-009-0119-1. Acesso em: 03 set. 2024.APA
Alfonso, A. B., Lewis, R. A., Hai, G. -Q., & Vickers, R. E. M. (2010). Energy states of phosphorous donor in silicon in fields up to 18 T. Journal of Low Temperature Physics, 159( 1/2), 226-229. doi:10.1007/s10909-009-0119-1NLM
Alfonso AB, Lewis RA, Hai G-Q, Vickers REM. Energy states of phosphorous donor in silicon in fields up to 18 T [Internet]. Journal of Low Temperature Physics. 2010 ; 159( 1/2): 226-229.[citado 2024 set. 03 ] Available from: https://doi.org/10.1007/s10909-009-0119-1Vancouver
Alfonso AB, Lewis RA, Hai G-Q, Vickers REM. Energy states of phosphorous donor in silicon in fields up to 18 T [Internet]. Journal of Low Temperature Physics. 2010 ; 159( 1/2): 226-229.[citado 2024 set. 03 ] Available from: https://doi.org/10.1007/s10909-009-0119-1
