Energy states of phosphorous donor in silicon in fields up to 18 T (2010)
Source: Journal of Low Temperature Physics. Unidade: IFSC
Subjects: ENERGIA (ESTADO), SILICIO, ESPECTROSCOPIA, SUPERCONDUTIVIDADE, MATERIAIS ELETRÔNICOS, CAMPO MAGNÉTICO
ABNT
ALFONSO, A. Bruno et al. Energy states of phosphorous donor in silicon in fields up to 18 T. Journal of Low Temperature Physics, v. 159, n. 1/2, p. 226-229, 2010Tradução . . Disponível em: https://doi.org/10.1007/s10909-009-0119-1. Acesso em: 23 ago. 2024.APA
Alfonso, A. B., Lewis, R. A., Hai, G. -Q., & Vickers, R. E. M. (2010). Energy states of phosphorous donor in silicon in fields up to 18 T. Journal of Low Temperature Physics, 159( 1/2), 226-229. doi:10.1007/s10909-009-0119-1NLM
Alfonso AB, Lewis RA, Hai G-Q, Vickers REM. Energy states of phosphorous donor in silicon in fields up to 18 T [Internet]. Journal of Low Temperature Physics. 2010 ; 159( 1/2): 226-229.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1007/s10909-009-0119-1Vancouver
Alfonso AB, Lewis RA, Hai G-Q, Vickers REM. Energy states of phosphorous donor in silicon in fields up to 18 T [Internet]. Journal of Low Temperature Physics. 2010 ; 159( 1/2): 226-229.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1007/s10909-009-0119-1