Source: Physica Status Solidi B. Unidade: IFSC
Subjects: SEMICONDUTORES, POLÍMEROS (MATERIAIS), NANOTECNOLOGIA
ABNT
GOZZI, Giovani et al. Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions. Physica Status Solidi B, v. 252, n. 2, p. 404-410, 2015Tradução . . Disponível em: https://doi.org/10.1002/pssb.201451556. Acesso em: 18 ago. 2024.APA
Gozzi, G., Queiroz, E. L., Zucolotto, V., Faria, R. M., & Chinaglia, D. L. (2015). Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions. Physica Status Solidi B, 252( 2), 404-410. doi:10.1002/pssb.201451556NLM
Gozzi G, Queiroz EL, Zucolotto V, Faria RM, Chinaglia DL. Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions [Internet]. Physica Status Solidi B. 2015 ; 252( 2): 404-410.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1002/pssb.201451556Vancouver
Gozzi G, Queiroz EL, Zucolotto V, Faria RM, Chinaglia DL. Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions [Internet]. Physica Status Solidi B. 2015 ; 252( 2): 404-410.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1002/pssb.201451556