Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching (1992)
Source: Cbecimat: Anais. Conference titles: Congresso Brasileiro de Engenharia e Ciencia dos Materiais. Unidade: EP
Subjects: SEMICONDUTORES, PLASMA (MICROELETRÔNICA), SILÍCIO
ABNT
YAMAMOTO, R K et al. Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching. 1992, Anais.. Campinas: Unicamp, 1992. . Acesso em: 02 set. 2024.APA
Yamamoto, R. K., Lopes, M. C. V., Akamine, C. T., Santos Filho, S. G. dos, & Hasenack, C. M. (1992). Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching. In Cbecimat: Anais. Campinas: Unicamp.NLM
Yamamoto RK, Lopes MCV, Akamine CT, Santos Filho SG dos, Hasenack CM. Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching. Cbecimat: Anais. 1992 ;[citado 2024 set. 02 ]Vancouver
Yamamoto RK, Lopes MCV, Akamine CT, Santos Filho SG dos, Hasenack CM. Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching. Cbecimat: Anais. 1992 ;[citado 2024 set. 02 ]