Sonnenberg, Victor 
; Martino, João Antonio
Source: Electrochemical Society. Proceedings. Conference titles: Silicon on Insulation Technology and Devices. Unidade: EP
Assunto: ELETROQUÍMICA
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SONNENBERG, Victor e MARTINO, João Antonio. A simple method to extract the oxide charge density at the buried oxide/substrate interface in SOI capacitor. Electrochemical Society. Proceedings. Pennington: Escola Politécnica, Universidade de São Paulo. . Acesso em: 08 out. 2024. , 1999APA
Sonnenberg, V., & Martino, J. A. (1999). A simple method to extract the oxide charge density at the buried oxide/substrate interface in SOI capacitor. Electrochemical Society. Proceedings. Pennington: Escola Politécnica, Universidade de São Paulo.NLM
Sonnenberg V, Martino JA. A simple method to extract the oxide charge density at the buried oxide/substrate interface in SOI capacitor. Electrochemical Society. Proceedings. 1999 ; 99-3 189-194.[citado 2024 out. 08 ]Vancouver
Sonnenberg V, Martino JA. A simple method to extract the oxide charge density at the buried oxide/substrate interface in SOI capacitor. Electrochemical Society. Proceedings. 1999 ; 99-3 189-194.[citado 2024 out. 08 ]
