ReP USP - Resultado da busca

Artigo de periodico
Planar force-constant method for lattice dynamics of cubic InN (2002)
Alves, H W Leite; Alves, J L A; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Materials Science and Engineering B. Unidade: IF
Subjects: SEMICONDUTIVIDADE, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H W Leite et al. Planar force-constant method for lattice dynamics of cubic InN. Materials Science and Engineering B, v. 93, n. 1-3, p. 90-93, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0921-5107(02)00036-3. Acesso em: 13 nov. 2024.
APA
Alves, H. W. L., Alves, J. L. A., Scolfaro, L. M. R., & Leite, J. R. (2002). Planar force-constant method for lattice dynamics of cubic InN. Materials Science and Engineering B, 93( 1-3), 90-93. doi:10.1016/s0921-5107(02)00036-3
NLM
Alves HWL, Alves JLA, Scolfaro LMR, Leite JR. Planar force-constant method for lattice dynamics of cubic InN [Internet]. Materials Science and Engineering B. 2002 ; 93( 1-3): 90-93.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/s0921-5107(02)00036-3
Vancouver
Alves HWL, Alves JLA, Scolfaro LMR, Leite JR. Planar force-constant method for lattice dynamics of cubic InN [Internet]. Materials Science and Engineering B. 2002 ; 93( 1-3): 90-93.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/s0921-5107(02)00036-3
Artigo de periodico
Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys (2002)
Paiva, R de; Alves, J L A; Nogueira, R A; Oliveira, C de; Alves, H W L; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Materials Science and Engineering B. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAIVA, R de et al. Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys. Materials Science and Engineering B, v. 93, n. 1-3, p. p 2-5, 2002Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5589&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0e0a80acf3a4a011f94b8bacbc1c1908. Acesso em: 13 nov. 2024.
APA
Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Oliveira, C. de, Alves, H. W. L., Scolfaro, L. M. R., & Leite, J. R. (2002). Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys. Materials Science and Engineering B, 93( 1-3), p 2-5. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5589&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0e0a80acf3a4a011f94b8bacbc1c1908
NLM
Paiva R de, Alves JLA, Nogueira RA, Oliveira C de, Alves HWL, Scolfaro LMR, Leite JR. Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys [Internet]. Materials Science and Engineering B. 2002 ; 93( 1-3): p 2-5.[citado 2024 nov. 13 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5589&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0e0a80acf3a4a011f94b8bacbc1c1908
Vancouver
Paiva R de, Alves JLA, Nogueira RA, Oliveira C de, Alves HWL, Scolfaro LMR, Leite JR. Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys [Internet]. Materials Science and Engineering B. 2002 ; 93( 1-3): p 2-5.[citado 2024 nov. 13 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5589&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0e0a80acf3a4a011f94b8bacbc1c1908
Artigo de periodico
Lattice dynamics of boron nitride (1999)
Alves, H. W. L.; Alves, J. L. A.; Castineira, J. L. P.; Leite, J. R.
Source: Materials Science and Engineering B. Unidade: IF
Assunto: ENGENHARIA AUTOMOBILÍSTICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H. W. L. et al. Lattice dynamics of boron nitride. Materials Science and Engineering B, v. 59, n. 1-3, p. 264-267, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0921-5107(98)00327-4. Acesso em: 13 nov. 2024.
APA
Alves, H. W. L., Alves, J. L. A., Castineira, J. L. P., & Leite, J. R. (1999). Lattice dynamics of boron nitride. Materials Science and Engineering B, 59( 1-3), 264-267. doi:10.1016/s0921-5107(98)00327-4
NLM
Alves HWL, Alves JLA, Castineira JLP, Leite JR. Lattice dynamics of boron nitride [Internet]. Materials Science and Engineering B. 1999 ; 59( 1-3): 264-267.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/s0921-5107(98)00327-4
Vancouver
Alves HWL, Alves JLA, Castineira JLP, Leite JR. Lattice dynamics of boron nitride [Internet]. Materials Science and Engineering B. 1999 ; 59( 1-3): 264-267.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/s0921-5107(98)00327-4
Artigo de periodico
Theoretical LEED parameters for the zinc-blende GaN (110) surface (1999)
Alves, H. W. L.; Alves, J. L. A.; Silva, Juarez Lopes Ferreira da ; Leite, J. R.; Nogueira, R. A.
Source: Materials Science and Engineering B. Unidade: IF
Assunto: ENGENHARIA AUTOMOBILÍSTICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H. W. L. et al. Theoretical LEED parameters for the zinc-blende GaN (110) surface. Materials Science and Engineering B, v. 59, n. 1-3, p. 258-260, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0921-5107(98)00348-1. Acesso em: 13 nov. 2024.
APA
Alves, H. W. L., Alves, J. L. A., Silva, J. L. F. da, Leite, J. R., & Nogueira, R. A. (1999). Theoretical LEED parameters for the zinc-blende GaN (110) surface. Materials Science and Engineering B, 59( 1-3), 258-260. doi:10.1016/s0921-5107(98)00348-1
NLM
Alves HWL, Alves JLA, Silva JLF da, Leite JR, Nogueira RA. Theoretical LEED parameters for the zinc-blende GaN (110) surface [Internet]. Materials Science and Engineering B. 1999 ; 59( 1-3): 258-260.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/s0921-5107(98)00348-1
Vancouver
Alves HWL, Alves JLA, Silva JLF da, Leite JR, Nogueira RA. Theoretical LEED parameters for the zinc-blende GaN (110) surface [Internet]. Materials Science and Engineering B. 1999 ; 59( 1-3): 258-260.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/s0921-5107(98)00348-1
Artigo de periodico
Atomic structure of the 'GaN(100, 110,111)' surfaces (1997)
Alves, J L A; Alves, H W L; Oliveira, C de; Valadao, R D S C; Leite, J. R.
Source: Materials Science and Engineering B. Unidade: IF
Subjects: ÁTOMOS, FISICA DOS MATERIAIS E MECANICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, J L A et al. Atomic structure of the 'GaN(100, 110,111)' surfaces. Materials Science and Engineering B, v. 43, p. 288-291, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0921-5107(96)01869-7. Acesso em: 13 nov. 2024.
APA
Alves, J. L. A., Alves, H. W. L., Oliveira, C. de, Valadao, R. D. S. C., & Leite, J. R. (1997). Atomic structure of the 'GaN(100, 110,111)' surfaces. Materials Science and Engineering B, 43, 288-291. doi:10.1016/s0921-5107(96)01869-7
NLM
Alves JLA, Alves HWL, Oliveira C de, Valadao RDSC, Leite JR. Atomic structure of the 'GaN(100, 110,111)' surfaces [Internet]. Materials Science and Engineering B. 1997 ; 43 288-291.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/s0921-5107(96)01869-7
Vancouver
Alves JLA, Alves HWL, Oliveira C de, Valadao RDSC, Leite JR. Atomic structure of the 'GaN(100, 110,111)' surfaces [Internet]. Materials Science and Engineering B. 1997 ; 43 288-291.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/s0921-5107(96)01869-7
Trabalho de evento-resumo periodico
Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells (1995)
Tabata, A; Ceschin, A M; Quivy, A. A.; Levine, A; Leite, J. R.; Enderlein, R; Oliveira, J. B. B.; Laureto, E; Goncalves, J L
Source: Materials Science and Engineering B. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TABATA, A et al. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo. . Acesso em: 13 nov. 2024. , 1995
APA
Tabata, A., Ceschin, A. M., Quivy, A. A., Levine, A., Leite, J. R., Enderlein, R., et al. (1995). Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo.
NLM
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2024 nov. 13 ]
Vancouver
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2024 nov. 13 ]

USP Schools

ReP

Filtros

Authors

Subjects