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Artigo de periodico
Effective masses and complex dielectric function of cubic "HfO IND.2" (2004)
Garcia, Joelson Cott; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Lino, A T; Freire, V N; Farias, G A; Silva, Junior, E F da
Source: Applied Physics Letters. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIELÉTRICOS
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ABNT
GARCIA, Joelson Cott et al. Effective masses and complex dielectric function of cubic "HfO IND.2". Applied Physics Letters, v. 85, n. 21, p. 5022-5024, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000085000021005022000001&idtype=cvips. Acesso em: 10 out. 2024.
APA
Garcia, J. C., Scolfaro, L. M. R., Leite, J. R., Lino, A. T., Freire, V. N., Farias, G. A., & Silva, J. (2004). Effective masses and complex dielectric function of cubic "HfO IND.2". Applied Physics Letters, 85( 21), 5022-5024. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000085000021005022000001&idtype=cvips
NLM
Garcia JC, Scolfaro LMR, Leite JR, Lino AT, Freire VN, Farias GA, Silva J. Effective masses and complex dielectric function of cubic "HfO IND.2" [Internet]. Applied Physics Letters. 2004 ; 85( 21): 5022-5024.[citado 2024 out. 10 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000085000021005022000001&idtype=cvips
Vancouver
Garcia JC, Scolfaro LMR, Leite JR, Lino AT, Freire VN, Farias GA, Silva J. Effective masses and complex dielectric function of cubic "HfO IND.2" [Internet]. Applied Physics Letters. 2004 ; 85( 21): 5022-5024.[citado 2024 out. 10 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000085000021005022000001&idtype=cvips
Artigo de periodico
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems (2001)
Fernandez, J R L; Araujo, C Moyses; Silva, A Ferreira da; Leite, J. R.; Sernelius, Bo E; Tabata, A; Abramog, E; Chitta, V A; Persson, C; Ahuja, R; Pepe, I; As, D J; Frey, T; Schikora, D; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: DIELÉTRICOS, RESISTÊNCIA ELÉTRICA, MATERIAIS (ANÁLISE;TESTES), RESISTÊNCIA DOS MATERIAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERNANDEZ, J R L et al. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, v. 231, n. 3, p. 420-427, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)01473-7. Acesso em: 10 out. 2024.
APA
Fernandez, J. R. L., Araujo, C. M., Silva, A. F. da, Leite, J. R., Sernelius, B. E., Tabata, A., et al. (2001). Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, 231( 3), 420-427. doi:10.1016/s0022-0248(01)01473-7
NLM
Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2024 out. 10 ] Available from: https://doi.org/10.1016/s0022-0248(01)01473-7
Vancouver
Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2024 out. 10 ] Available from: https://doi.org/10.1016/s0022-0248(01)01473-7
Artigo de periodico
Temperature dependence of optical transitions in AlGaAs (2001)
Lourenço, S A; Dias, I F L; Duarte, J L; Laureto, E; Meneses, E A; Leite, J. R.; Mazzaro, I
Source: Journal of Applied Physics. Unidade: IF
Subjects: FOTOLUMINESCÊNCIA, ÓPTICA, SEMICONDUTORES, DIELÉTRICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LOURENÇO, S A et al. Temperature dependence of optical transitions in AlGaAs. Journal of Applied Physics, v. 89, n. 11, p. 6159-6164, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1367875. Acesso em: 10 out. 2024.
APA
Lourenço, S. A., Dias, I. F. L., Duarte, J. L., Laureto, E., Meneses, E. A., Leite, J. R., & Mazzaro, I. (2001). Temperature dependence of optical transitions in AlGaAs. Journal of Applied Physics, 89( 11), 6159-6164. doi:10.1063/1.1367875
NLM
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Meneses EA, Leite JR, Mazzaro I. Temperature dependence of optical transitions in AlGaAs [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6159-6164.[citado 2024 out. 10 ] Available from: https://doi.org/10.1063/1.1367875
Vancouver
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Meneses EA, Leite JR, Mazzaro I. Temperature dependence of optical transitions in AlGaAs [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6159-6164.[citado 2024 out. 10 ] Available from: https://doi.org/10.1063/1.1367875

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