Subjects: SPIN, SEMICONDUTORES
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ABNT
VENEGAS, P. A. et al. Collapse of the 'GD' POT. 3+' ESR fine structure throughout the coherent temperature of the 'GD'-doped kondo Semiconductor 'CE''FE IND. 4''P IND. 12'. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/ftp/arxiv/papers/1607/1607.04620.pdf. Acesso em: 16 ago. 2024. , 2016APA
Venegas, P. A., Garcia, D. J., Cabrera, G., Avila, M. A., Rettori, C., & Garcia, F. A. (2016). Collapse of the 'GD' POT. 3+' ESR fine structure throughout the coherent temperature of the 'GD'-doped kondo Semiconductor 'CE''FE IND. 4''P IND. 12'. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/ftp/arxiv/papers/1607/1607.04620.pdfNLM
Venegas PA, Garcia DJ, Cabrera G, Avila MA, Rettori C, Garcia FA. Collapse of the 'GD' POT. 3+' ESR fine structure throughout the coherent temperature of the 'GD'-doped kondo Semiconductor 'CE''FE IND. 4''P IND. 12' [Internet]. 2016 ;[citado 2024 ago. 16 ] Available from: https://arxiv.org/ftp/arxiv/papers/1607/1607.04620.pdfVancouver
Venegas PA, Garcia DJ, Cabrera G, Avila MA, Rettori C, Garcia FA. Collapse of the 'GD' POT. 3+' ESR fine structure throughout the coherent temperature of the 'GD'-doped kondo Semiconductor 'CE''FE IND. 4''P IND. 12' [Internet]. 2016 ;[citado 2024 ago. 16 ] Available from: https://arxiv.org/ftp/arxiv/papers/1607/1607.04620.pdf
