Source: Abstracts. Conference titles: International Conference on Defects in Insulating Materials - ICDIM. Unidade: IFSC
Subjects: CRESCIMENTO DE CRISTAIS, TERMOLUMINESCÊNCIA, LUMINESCÊNCIA, MATERIAIS CERÂMICOS, LUMINESCÊNCIA (PROPRIEDADES)
ABNT
SILVA, Ronaldo Santos et al. Scintillating mechanism of 'Bi IND.4''Ge IND.3''O IND.12' studied via radioluminescence and thermoluminescence techniques. 2008, Anais.. São Cristovão: Universidade Federal de Sergipe, 2008. . Acesso em: 15 set. 2024.APA
Silva, R. S., Hernandes, A. C., Macedo, Z. S., & Valerio, M. E. G. (2008). Scintillating mechanism of 'Bi IND.4''Ge IND.3''O IND.12' studied via radioluminescence and thermoluminescence techniques. In Abstracts. São Cristovão: Universidade Federal de Sergipe.NLM
Silva RS, Hernandes AC, Macedo ZS, Valerio MEG. Scintillating mechanism of 'Bi IND.4''Ge IND.3''O IND.12' studied via radioluminescence and thermoluminescence techniques. Abstracts. 2008 ;[citado 2024 set. 15 ]Vancouver
Silva RS, Hernandes AC, Macedo ZS, Valerio MEG. Scintillating mechanism of 'Bi IND.4''Ge IND.3''O IND.12' studied via radioluminescence and thermoluminescence techniques. Abstracts. 2008 ;[citado 2024 set. 15 ]