Source: Sensors and Actuators B. Unidade: IFSC
Subjects: SENSORES QUÍMICOS, REDUÇÃO, TEMPERATURA
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RUIZ, Elisa et al. Investigating the thermally induced p-n transition in reduced graphene oxide layers exposed to hydrogen sulfide. Sensors and Actuators B, v. 409, p. 135611-1-135611-10, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.snb.2024.135611. Acesso em: 22 ago. 2024.APA
Ruiz, E., Varenne, C., Lima, B. S. de, Gueye, T., Pauly, A., Mastelaro, V. R., et al. (2024). Investigating the thermally induced p-n transition in reduced graphene oxide layers exposed to hydrogen sulfide. Sensors and Actuators B, 409, 135611-1-135611-10. doi:10.1016/j.snb.2024.135611NLM
Ruiz E, Varenne C, Lima BS de, Gueye T, Pauly A, Mastelaro VR, Brunet J, Ndiaye AL. Investigating the thermally induced p-n transition in reduced graphene oxide layers exposed to hydrogen sulfide [Internet]. Sensors and Actuators B. 2024 ; 409 135611-1-135611-10.[citado 2024 ago. 22 ] Available from: https://doi.org/10.1016/j.snb.2024.135611Vancouver
Ruiz E, Varenne C, Lima BS de, Gueye T, Pauly A, Mastelaro VR, Brunet J, Ndiaye AL. Investigating the thermally induced p-n transition in reduced graphene oxide layers exposed to hydrogen sulfide [Internet]. Sensors and Actuators B. 2024 ; 409 135611-1-135611-10.[citado 2024 ago. 22 ] Available from: https://doi.org/10.1016/j.snb.2024.135611