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  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Fotoluminescência, Poços Quânticos, Semicondutores

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      PATRICIO, M. A. Tito; LAPIERRE, R. R.; PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, Melville, American Institute of Physics - AIP, v. 125, n. 15, p. 155703-01-155703-06, 2019. Disponível em: < http://dx.doi.org/10.1063/1.5085493 > DOI: 10.1063/1.5085493.
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      Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493
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      Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.Available from: http://dx.doi.org/10.1063/1.5085493
    • Vancouver

      Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.Available from: http://dx.doi.org/10.1063/1.5085493
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Cerâmica, óptica Não Linear, Ferroeletricidade

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      OCHOA, Diego A.; CASALS, Jorge A.; VENET, Michel; M'PEKO, Jean Claude; GARCÍA, Jose E. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics. Journal of Applied Physics, Melville, American Institute of Physics - AIP, v. 125, n. Ja 2019, p. 024101-1-024101-8, 2019. Disponível em: < http://dx.doi.org/10.1063/1.5067243 > DOI: 10.1063/1.5067243.
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      Ochoa, D. A., Casals, J. A., Venet, M., M'Peko, J. C., & García, J. E. (2019). Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics. Journal of Applied Physics, 125( Ja 2019), 024101-1-024101-8. doi:10.1063/1.5067243
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      Ochoa DA, Casals JA, Venet M, M'Peko JC, García JE. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics [Internet]. Journal of Applied Physics. 2019 ; 125( Ja 2019): 024101-1-024101-8.Available from: http://dx.doi.org/10.1063/1.5067243
    • Vancouver

      Ochoa DA, Casals JA, Venet M, M'Peko JC, García JE. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics [Internet]. Journal of Applied Physics. 2019 ; 125( Ja 2019): 024101-1-024101-8.Available from: http://dx.doi.org/10.1063/1.5067243
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Cerâmica, óptica Não Linear, Ferroeletricidade

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      SANTA-ROSA, Washington; SILVA JR., Paulo Sergio da; M'PEKO, Jean Claude; et al. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications. Journal of Applied Physics, Melville, American Institute of Physics - AIP, v. 125, n. 7, p. 075107-1-075107-8, 2019. Disponível em: < http://dx.doi.org/10.1063/1.5063320 > DOI: 10.1063/1.5063320.
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      Santa-Rosa, W., Silva Jr., P. S. da, M'Peko, J. C., Amorín, H., Algueró, M., & Venet, M. (2019). Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications. Journal of Applied Physics, 125( 7), 075107-1-075107-8. doi:10.1063/1.5063320
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      Santa-Rosa W, Silva Jr. PS da, M'Peko JC, Amorín H, Algueró M, Venet M. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications [Internet]. Journal of Applied Physics. 2019 ; 125( 7): 075107-1-075107-8.Available from: http://dx.doi.org/10.1063/1.5063320
    • Vancouver

      Santa-Rosa W, Silva Jr. PS da, M'Peko JC, Amorín H, Algueró M, Venet M. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications [Internet]. Journal of Applied Physics. 2019 ; 125( 7): 075107-1-075107-8.Available from: http://dx.doi.org/10.1063/1.5063320
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Luminescência, Emissão Da Luz, Filmes Finos, óptica Não Linear

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      PEREIRA, Alessandra; CONTE, Gilmar; FACETO, Angelo Danilo; et al. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures. Journal of Applied Physics, Melville, American Institute of Physics - AIP, v. 126, n. 16, p. 165501-1-165501-9, 2019. Disponível em: < http://dx.doi.org/10.1063/1.5099014 > DOI: 10.1063/1.5099014.
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      Pereira, A., Conte, G., Faceto, A. D., Nunes, L. A. de O., Quirino, W. G., Guimarães, F. E. G., et al. (2019). Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures. Journal of Applied Physics, 126( 16), 165501-1-165501-9. doi:10.1063/1.5099014
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      Pereira A, Conte G, Faceto AD, Nunes LA de O, Quirino WG, Guimarães FEG, Legnani C, Gallardo H, Cremona M, Bechtold IH. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures [Internet]. Journal of Applied Physics. 2019 ; 126( 16): 165501-1-165501-9.Available from: http://dx.doi.org/10.1063/1.5099014
    • Vancouver

      Pereira A, Conte G, Faceto AD, Nunes LA de O, Quirino WG, Guimarães FEG, Legnani C, Gallardo H, Cremona M, Bechtold IH. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures [Internet]. Journal of Applied Physics. 2019 ; 126( 16): 165501-1-165501-9.Available from: http://dx.doi.org/10.1063/1.5099014
  • In: Journal of Applied Physics. Unidades: IFSC, IQSC

    Subjects: Semicondutores, Magnetismo, Dispositivos Eletrônicos

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      BASTOS, Carlos M. O.; SABINO, Fernando P.; SIPAHI, Guilherme Matos; SILVA, Juarez Lopes Ferreira da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 123, n. 6, p. 065702-1-065702-13, 2018. Disponível em: < http://dx.doi.org/10.1063/1.5018325 > DOI: 10.1063/1.5018325.
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      Bastos, C. M. O., Sabino, F. P., Sipahi, G. M., & Silva, J. L. F. da. (2018). A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, 123( 6), 065702-1-065702-13. doi:10.1063/1.5018325
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      Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.Available from: http://dx.doi.org/10.1063/1.5018325
    • Vancouver

      Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.Available from: http://dx.doi.org/10.1063/1.5018325
  • In: Journal of Applied Physics. Unidades: IFSC, IQSC

    Subjects: óptica, Física Teórica

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      SABINO, Fernando P.; OLIVEIRA, Luiz Nunes de; WEI, Su-Huai; SILVA, Juarez Lopes Ferreira da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 123, n. 5, p. 055704-1-055704-9, 2018. Disponível em: < http://dx.doi.org/10.1063/1.5018056 > DOI: 10.1063/1.5018056.
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      Sabino, F. P., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2018). Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, 123( 5), 055704-1-055704-9. doi:10.1063/1.5018056
    • NLM

      Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.Available from: http://dx.doi.org/10.1063/1.5018056
    • Vancouver

      Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.Available from: http://dx.doi.org/10.1063/1.5018056
  • In: Journal of Applied Physics. Unidades: IFSC, IF

    Subjects: Polímeros (materiais), Filmes Finos, Células Solares

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      BRENES-BADILLA, D.; COUTINHO, D. J.; AMORIM, D. R. B.; FARIA, Roberto Mendonça; SALVADORI, Maria Cecília Barbosa da Silveira. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 123, n. 15, p. 155502-1-155502-7, 2018. Disponível em: < http://dx.doi.org/10.1063/1.5017672 > DOI: 10.1063/1.5017672.
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      Brenes-Badilla, D., Coutinho, D. J., Amorim, D. R. B., Faria, R. M., & Salvadori, M. C. B. da S. (2018). Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer. Journal of Applied Physics, 123( 15), 155502-1-155502-7. doi:10.1063/1.5017672
    • NLM

      Brenes-Badilla D, Coutinho DJ, Amorim DRB, Faria RM, Salvadori MCB da S. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer [Internet]. Journal of Applied Physics. 2018 ; 123( 15): 155502-1-155502-7.Available from: http://dx.doi.org/10.1063/1.5017672
    • Vancouver

      Brenes-Badilla D, Coutinho DJ, Amorim DRB, Faria RM, Salvadori MCB da S. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer [Internet]. Journal of Applied Physics. 2018 ; 123( 15): 155502-1-155502-7.Available from: http://dx.doi.org/10.1063/1.5017672
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Semicondutores, Magnetismo, Dispositivos Eletrônicos

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      MARTINS, R. J.; SIQUEIRA, J. P.; CLAVERO, I. Manglano; et al. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 123, n. 24, p. 243101-1-243101-5, 2018. Disponível em: < http://dx.doi.org/10.1063/1.5027395 > DOI: 10.1063/1.5027395.
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      Martins, R. J., Siqueira, J. P., Clavero, I. M., Margenfeld, C., Fündling, S., Vogt, A., et al. (2018). Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, 123( 24), 243101-1-243101-5. doi:10.1063/1.5027395
    • NLM

      Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.Available from: http://dx.doi.org/10.1063/1.5027395
    • Vancouver

      Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.Available from: http://dx.doi.org/10.1063/1.5027395
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Neoplasias (tratamento), Carcinoma Basocelular

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      STRINGASCI, Mirian Denise; SALVIO, Ana Gabriela; SBRISSA NETO, David; et al. Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 124, n. 4, p. 044701-1-044701-8, 2018. Disponível em: < http://dx.doi.org/10.1063/1.5036640 > DOI: 10.1063/1.5036640.
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      Stringasci, M. D., Salvio, A. G., Sbrissa Neto, D., Vollet-Filho, J. D., Bagnato, V. S., & Kurachi, C. (2018). Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier. Journal of Applied Physics, 124( 4), 044701-1-044701-8. doi:10.1063/1.5036640
    • NLM

      Stringasci MD, Salvio AG, Sbrissa Neto D, Vollet-Filho JD, Bagnato VS, Kurachi C. Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier [Internet]. Journal of Applied Physics. 2018 ; 124( 4): 044701-1-044701-8.Available from: http://dx.doi.org/10.1063/1.5036640
    • Vancouver

      Stringasci MD, Salvio AG, Sbrissa Neto D, Vollet-Filho JD, Bagnato VS, Kurachi C. Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier [Internet]. Journal of Applied Physics. 2018 ; 124( 4): 044701-1-044701-8.Available from: http://dx.doi.org/10.1063/1.5036640
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Fotoluminescência, Poços Quânticos, Semicondutores

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      TITO, M. A.; PUSEP, Yuri A.; GOLD, A.; et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 119, n. 9, p. 094301-1-094301-8, 2016. Disponível em: < http://dx.doi.org/10.1063/1.4942854 > DOI: 10.1063/1.4942854.
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      Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
    • NLM

      Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.Available from: http://dx.doi.org/10.1063/1.4942854
    • Vancouver

      Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.Available from: http://dx.doi.org/10.1063/1.4942854
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Fotoluminescência, Poços Quânticos, Semicondutores

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      TAVARES, B. G. M.; TITO, M. A.; PUSEP, Yuri A. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 119, n. 23, p. 234305-1-234305-4, 2016. Disponível em: < http://dx.doi.org/10.1063/1.4954161 > DOI: 10.1063/1.4954161.
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      Tavares, B. G. M., Tito, M. A., & Pusep, Y. A. (2016). Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, 119( 23), 234305-1-234305-4. doi:10.1063/1.4954161
    • NLM

      Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.Available from: http://dx.doi.org/10.1063/1.4954161
    • Vancouver

      Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.Available from: http://dx.doi.org/10.1063/1.4954161
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Materiais Nanoestruturados, Matéria Condensada

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      ZANATTA, Antonio Ricardo. An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 119, n. 14, p. 145302-1-145302-5, 2016. Disponível em: < http://dx.doi.org/10.1063/1.4945677 > DOI: 10.1063/1.4945677.
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      Zanatta, A. R. (2016). An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, 119( 14), 145302-1-145302-5. doi:10.1063/1.4945677
    • NLM

      Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.Available from: http://dx.doi.org/10.1063/1.4945677
    • Vancouver

      Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.Available from: http://dx.doi.org/10.1063/1.4945677
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Fotoluminescência, Energia, Alumínio

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      SANTOS, J. F. M.; TERRA, I. A. A.; ASTRATH, N. G. C.; et al. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 117, n. 5, p. 053102-1-053102-8, 2015. Disponível em: < http://dx.doi.org/10.1063/1.4906781 > DOI: 10.1063/1.4906781.
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      Santos, J. F. M., Terra, I. A. A., Astrath, N. G. C., Guimarães, F. B., Baesso, M. L., Nunes, L. A. de O., & Catunda, T. (2015). Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses. Journal of Applied Physics, 117( 5), 053102-1-053102-8. doi:10.1063/1.4906781
    • NLM

      Santos JFM, Terra IAA, Astrath NGC, Guimarães FB, Baesso ML, Nunes LA de O, Catunda T. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2015 ; 117( 5): 053102-1-053102-8.Available from: http://dx.doi.org/10.1063/1.4906781
    • Vancouver

      Santos JFM, Terra IAA, Astrath NGC, Guimarães FB, Baesso ML, Nunes LA de O, Catunda T. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2015 ; 117( 5): 053102-1-053102-8.Available from: http://dx.doi.org/10.1063/1.4906781
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Fotoluminescência, Poços Quânticos

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      MAZUR, Yu. I.; LOPES-OLIVEIRA, V.; SOUZA, L. D.; et al. Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 117, n. 15, p. 154307-1-154307-9, 2015. Disponível em: < http://dx.doi.org/10.1063/1.4918544 > DOI: 10.1063/1.4918544.
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      Mazur, Y. I., Lopes-Oliveira, V., Souza, L. D., Lopez-Richard, V., Teodoro, M. D., Dorogan, V. G., et al. (2015). Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, 117( 15), 154307-1-154307-9. doi:10.1063/1.4918544
    • NLM

      Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Júnior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.Available from: http://dx.doi.org/10.1063/1.4918544
    • Vancouver

      Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Júnior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.Available from: http://dx.doi.org/10.1063/1.4918544
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Fotoluminescência, Filmes Finos

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      SCOCA, D.; MORALES, M.; MERLO, R.; ALVAREZ, F.; ZANATTA, Antonio Ricardo. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 117, n. 20, p. 205304-1-205304-6, 2015. Disponível em: < http://dx.doi.org/10.1063/1.4921809 > DOI: 10.1063/1.4921809.
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      Scoca, D., Morales, M., Merlo, R., Alvarez, F., & Zanatta, A. R. (2015). Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, 117( 20), 205304-1-205304-6. doi:10.1063/1.4921809
    • NLM

      Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.Available from: http://dx.doi.org/10.1063/1.4921809
    • Vancouver

      Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.Available from: http://dx.doi.org/10.1063/1.4921809
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Silício, Alumínio, Filmes Finos (composição;estrutura;propriedades)

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      ZANATTA, Antonio Ricardo; KORDESCH, M. E. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 116, n. 7, p. 073511-1-073511-7, 2014. Disponível em: < http://dx.doi.org/10.1063/1.4893654 > DOI: 10.1063/1.4893654.
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      Zanatta, A. R., & Kordesch, M. E. (2014). On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, 116( 7), 073511-1-073511-7. doi:10.1063/1.4893654
    • NLM

      Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.Available from: http://dx.doi.org/10.1063/1.4893654
    • Vancouver

      Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.Available from: http://dx.doi.org/10.1063/1.4893654
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: óptica, Nanopartículas, Prata

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      ALMEIDA, J. M. P.; FERREIRA, P. H. D.; MANZANI, D.; et al. Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 115, n. 19, p. 193507-1-193507-5, 2014. Disponível em: < http://dx.doi.org/10.1063/1.4875485 > DOI: 10.1063/1.4875485.
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      Almeida, J. M. P., Ferreira, P. H. D., Manzani, D., Napoli, M., Ribeiro, S. J. L., & Mendonça, C. R. (2014). Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides. Journal of Applied Physics, 115( 19), 193507-1-193507-5. doi:10.1063/1.4875485
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      Almeida JMP, Ferreira PHD, Manzani D, Napoli M, Ribeiro SJL, Mendonça CR. Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides [Internet]. Journal of Applied Physics. 2014 ; 115( 19): 193507-1-193507-5.Available from: http://dx.doi.org/10.1063/1.4875485
    • Vancouver

      Almeida JMP, Ferreira PHD, Manzani D, Napoli M, Ribeiro SJL, Mendonça CR. Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides [Internet]. Journal of Applied Physics. 2014 ; 115( 19): 193507-1-193507-5.Available from: http://dx.doi.org/10.1063/1.4875485
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Semicondutores, Nanotecnologia

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      BARBOSA, B. G.; ARAKAKI, Haroldo; SOUZA, Carlos Alberto de; PUSEP, Yuri A. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 115, p. 114312-1-114312-5, 2014. Disponível em: < http://dx.doi.org/10.1063/1.4869218 > DOI: 10.1063/1.4869218.
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      Barbosa, B. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2014). Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, 115, 114312-1-114312-5. doi:10.1063/1.4869218
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      Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.Available from: http://dx.doi.org/10.1063/1.4869218
    • Vancouver

      Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.Available from: http://dx.doi.org/10.1063/1.4869218
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Níquel, Semicondutores, Difração Por Raios X, Cristalização, Filmes Finos (composição;estrutura;propriedades)

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      ZANATTA, Antonio Ricardo; INGRAM, D. C.; KORDESCH, M. E. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 116, n. 12, p. 123508-1-123508-6, 2014. Disponível em: < http://dx.doi.org/10.1063/1.4896589 > DOI: 10.1063/1.4896589.
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      Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2014). Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, 116( 12), 123508-1-123508-6. doi:10.1063/1.4896589
    • NLM

      Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.Available from: http://dx.doi.org/10.1063/1.4896589
    • Vancouver

      Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.Available from: http://dx.doi.org/10.1063/1.4896589
  • In: Journal of Applied Physics. Unidade: IFSC

    Subjects: Polarização, Absorção Da Luz, Física Computacional

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      FARIA JUNIOR, P. E.; CAMPOS, T.; SIPAHI, Guilherme Matos. Interband polarized absorption in InP polytypic superlattices. Journal of Applied Physics, College Park, American Institute of Physics - AIP, v. 116, n. 19, p. 193501-1-193501-8, 2014. Disponível em: < http://dx.doi.org/10.1063/1.4901209 > DOI: 10.1063/1.4901209.
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      Faria Junior, P. E., Campos, T., & Sipahi, G. M. (2014). Interband polarized absorption in InP polytypic superlattices. Journal of Applied Physics, 116( 19), 193501-1-193501-8. doi:10.1063/1.4901209
    • NLM

      Faria Junior PE, Campos T, Sipahi GM. Interband polarized absorption in InP polytypic superlattices [Internet]. Journal of Applied Physics. 2014 ; 116( 19): 193501-1-193501-8.Available from: http://dx.doi.org/10.1063/1.4901209
    • Vancouver

      Faria Junior PE, Campos T, Sipahi GM. Interband polarized absorption in InP polytypic superlattices [Internet]. Journal of Applied Physics. 2014 ; 116( 19): 193501-1-193501-8.Available from: http://dx.doi.org/10.1063/1.4901209


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