Source: Microelectronics Reliability. Unidade: IF
Assunto: RADIAÇÃO IONIZANTE
ABNT
ALLEGRO, Paula Rangel Pestana et al. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects. Microelectronics Reliability, v. 142, 2023Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/01378c7f-10d1-4c4c-84e2-55fa987ef98b/1-s2.0-S0026271423000161-main.pdf. Acesso em: 23 set. 2023.APA
Allegro, P. R. P., Aguiar, V. Â. P. de, Added, N., Medina, N. H., Macchione, E. L. A., & Alberton, S. G. P. N. (2023). Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects. Microelectronics Reliability, 142. doi:https://doi.org/10.1016/j.microrel.2023.114916NLM
Allegro PRP, Aguiar VÂP de, Added N, Medina NH, Macchione ELA, Alberton SGPN. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects [Internet]. Microelectronics Reliability. 2023 ; 142[citado 2023 set. 23 ] Available from: https://repositorio.usp.br/directbitstream/01378c7f-10d1-4c4c-84e2-55fa987ef98b/1-s2.0-S0026271423000161-main.pdfVancouver
Allegro PRP, Aguiar VÂP de, Added N, Medina NH, Macchione ELA, Alberton SGPN. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects [Internet]. Microelectronics Reliability. 2023 ; 142[citado 2023 set. 23 ] Available from: https://repositorio.usp.br/directbitstream/01378c7f-10d1-4c4c-84e2-55fa987ef98b/1-s2.0-S0026271423000161-main.pdf