Comparative study of defect energetics in 'HF' IND. 2' and 'SI' IND. 2' (2020)
Unidade: IFSubjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS
ABNT
SCOPEL, W. L. e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. Comparative study of defect energetics in 'HF' IND. 2' and 'SI' IND. 2'. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0310747.pdf. Acesso em: 16 mar. 2026. , 2020APA
Scopel, W. L., Fazzio, A., & Silva, A. J. R. da. (2020). Comparative study of defect energetics in 'HF' IND. 2' and 'SI' IND. 2'. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0310747.pdfNLM
Scopel WL, Fazzio A, Silva AJR da. Comparative study of defect energetics in 'HF' IND. 2' and 'SI' IND. 2' [Internet]. 2020 ;[citado 2026 mar. 16 ] Available from: https://arxiv.org/pdf/cond-mat/0310747.pdfVancouver
Scopel WL, Fazzio A, Silva AJR da. Comparative study of defect energetics in 'HF' IND. 2' and 'SI' IND. 2' [Internet]. 2020 ;[citado 2026 mar. 16 ] Available from: https://arxiv.org/pdf/cond-mat/0310747.pdf
