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  • Source: Abstracts. Conference titles: ECS Meeting. Unidade: IQ

    Assunto: ELETROQUÍMICA

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    • ABNT

      RODRIGUEZ, Oliver; LIMA, Alan Rogério Ferreira; LIMA, Alex Silva; BERTOTTI, Mauro; DENUAULT, Guy. Electrochemical investigation on the reduction of oxygen at a perovskite modified Au microelectrode. Anais.. Pennington: The Electrochemical Society, 2017.
    • APA

      Rodriguez, O., Lima, A. R. F., Lima, A. S., Bertotti, M., & Denuault, G. (2017). Electrochemical investigation on the reduction of oxygen at a perovskite modified Au microelectrode. In Abstracts. Pennington: The Electrochemical Society.
    • NLM

      Rodriguez O, Lima ARF, Lima AS, Bertotti M, Denuault G. Electrochemical investigation on the reduction of oxygen at a perovskite modified Au microelectrode. Abstracts. 2017 ;
    • Vancouver

      Rodriguez O, Lima ARF, Lima AS, Bertotti M, Denuault G. Electrochemical investigation on the reduction of oxygen at a perovskite modified Au microelectrode. Abstracts. 2017 ;
  • Source: Journal of the Electrochemical Society. Unidade: EP

    Subjects: LIGAS NÃO FERROSAS, FRICÇÃO, ELETROQUÍMICA

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      ABREU, Caio Palumbo de; COSTA, Isolda; MELO, Hercílio Gomes de; et al. Multiscale electrochemical study of welded Al alloys joined by friction stir welding. Journal of the Electrochemical Society, New York, The Electrochemical Society, v. 164, n. 13, p. C735- C746, 2017. Disponível em: < http://jes.ecsdl.org/content/164/13/C735 > DOI: 10.1149/2.0391713jes.
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      Abreu, C. P. de, Costa, I., Melo, H. G. de, Péberè, N., Tribollet, B., & Vivier, V. (2017). Multiscale electrochemical study of welded Al alloys joined by friction stir welding. Journal of the Electrochemical Society, 164( 13), C735- C746. doi:10.1149/2.0391713jes
    • NLM

      Abreu CP de, Costa I, Melo HG de, Péberè N, Tribollet B, Vivier V. Multiscale electrochemical study of welded Al alloys joined by friction stir welding [Internet]. Journal of the Electrochemical Society. 2017 ;164( 13): C735- C746.Available from: http://jes.ecsdl.org/content/164/13/C735
    • Vancouver

      Abreu CP de, Costa I, Melo HG de, Péberè N, Tribollet B, Vivier V. Multiscale electrochemical study of welded Al alloys joined by friction stir welding [Internet]. Journal of the Electrochemical Society. 2017 ;164( 13): C735- C746.Available from: http://jes.ecsdl.org/content/164/13/C735
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Subjects: ELETROQUÍMICA, SIMULAÇÃO DE SISTEMAS

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      COLOMBO, Fábio Belotti; MARCELO NELSON PÁEZ CARREÑO,. A multi-process microfabrication simulator based on cellular automata. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 101-108, 2010.
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      Colombo, F. B., & Marcelo Nelson Páez Carreño,. (2010). A multi-process microfabrication simulator based on cellular automata. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 101-108.
    • NLM

      Colombo FB, Marcelo Nelson Páez Carreño. A multi-process microfabrication simulator based on cellular automata. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 101-108.
    • Vancouver

      Colombo FB, Marcelo Nelson Páez Carreño. A multi-process microfabrication simulator based on cellular automata. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 101-108.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Assunto: ELETROQUÍMICA

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      NUNES, C. C. P.; MANSANO, Ronaldo Domingues. a-Si:H thin films deposited at low temperature by sputtering. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 135-142, 2010.
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      Nunes, C. C. P., & Mansano, R. D. (2010). a-Si:H thin films deposited at low temperature by sputtering. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 135-142.
    • NLM

      Nunes CCP, Mansano RD. a-Si:H thin films deposited at low temperature by sputtering. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 135-142.
    • Vancouver

      Nunes CCP, Mansano RD. a-Si:H thin films deposited at low temperature by sputtering. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 135-142.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Subjects: TRANSISTORES, SEMICONDUTORES

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      ANDRADE, Maria Glória Caño de; MARTINO, João Antonio. Analog performance of bulk and DTMOS triple-gate devices. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 67-74, 2010.
    • APA

      Andrade, M. G. C. de, & Martino, J. A. (2010). Analog performance of bulk and DTMOS triple-gate devices. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 67-74.
    • NLM

      Andrade MGC de, Martino JA. Analog performance of bulk and DTMOS triple-gate devices. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 67-74.
    • Vancouver

      Andrade MGC de, Martino JA. Analog performance of bulk and DTMOS triple-gate devices. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 67-74.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Assunto: ELETROQUÍMICA

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      CAVALLARI, Marcelo Mattos; ALBERTIN, Katia Franklin; SANTOS, G.; et al. Voltage-depedent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 425-432, 2010.
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      Cavallari, M. M., Albertin, K. F., Santos, G., Ramos, C. A. S., Pereyra, I., Fonseca, F. J., & Andrade, A. M. (2010). Voltage-depedent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 425-432.
    • NLM

      Cavallari MM, Albertin KF, Santos G, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM. Voltage-depedent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 425-432.
    • Vancouver

      Cavallari MM, Albertin KF, Santos G, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM. Voltage-depedent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 425-432.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Assunto: ELETROQUÍMICA

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    • ABNT

      ALMEIDA, L. M.; MARTINO, João Antonio; SIMOEN, E.; CLAEYS, C. Improved analytical model for ZTC bias point for strained Tri-gates FinFETs. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 385-392, 2010.
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      Almeida, L. M., Martino, J. A., Simoen, E., & Claeys, C. (2010). Improved analytical model for ZTC bias point for strained Tri-gates FinFETs. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 385-392.
    • NLM

      Almeida LM, Martino JA, Simoen E, Claeys C. Improved analytical model for ZTC bias point for strained Tri-gates FinFETs. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 385-392.
    • Vancouver

      Almeida LM, Martino JA, Simoen E, Claeys C. Improved analytical model for ZTC bias point for strained Tri-gates FinFETs. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 385-392.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Assunto: SIMULAÇÃO DE SISTEMAS

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    • ABNT

      BUHLER, R. T.; GIACOMINI, R.; MARTINO, João Antonio. Analog parameters of strained non-rectangular triplegate FinFETs. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 21-28, 2010.
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      Buhler, R. T., Giacomini, R., & Martino, J. A. (2010). Analog parameters of strained non-rectangular triplegate FinFETs. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 21-28.
    • NLM

      Buhler RT, Giacomini R, Martino JA. Analog parameters of strained non-rectangular triplegate FinFETs. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 21-28.
    • Vancouver

      Buhler RT, Giacomini R, Martino JA. Analog parameters of strained non-rectangular triplegate FinFETs. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 21-28.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Assunto: ELETROQUÍMICA

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      MIELLI, M. Z.; BALDASSO, L. F.; LOPES, R.M.; PÁEZ CARREÑO, Marcelo Nelson. Microfluidic systems in PDMS for study of foraging abilities of marine microorganisms. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 449-455, 2010.
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      Mielli, M. Z., Baldasso, L. F., Lopes, R. M., & Páez Carreño, M. N. (2010). Microfluidic systems in PDMS for study of foraging abilities of marine microorganisms. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 449-455.
    • NLM

      Mielli MZ, Baldasso LF, Lopes RM, Páez Carreño MN. Microfluidic systems in PDMS for study of foraging abilities of marine microorganisms. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 449-455.
    • Vancouver

      Mielli MZ, Baldasso LF, Lopes RM, Páez Carreño MN. Microfluidic systems in PDMS for study of foraging abilities of marine microorganisms. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 449-455.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Subjects: TRANSISTORES, SENSOR

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    • ABNT

      RODRIGUES, B. da Silva; SAGAZAN, O. de; SALAUN, A-C.; et al. Humidity sensor thanks arrays of suspended gate field effect transistor. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 441-448, 2010.
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      Rodrigues, B. da S., Sagazan, O. de, Salaun, A. -C., Crand, S., Le Bihan, F., Mohammed-Brahim, T., et al. (2010). Humidity sensor thanks arrays of suspended gate field effect transistor. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 441-448.
    • NLM

      Rodrigues B da S, Sagazan O de, Salaun A-C, Crand S, Le Bihan F, Mohammed-Brahim T, Bonnaud O, Morimoto NI. Humidity sensor thanks arrays of suspended gate field effect transistor. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 441-448.
    • Vancouver

      Rodrigues B da S, Sagazan O de, Salaun A-C, Crand S, Le Bihan F, Mohammed-Brahim T, Bonnaud O, Morimoto NI. Humidity sensor thanks arrays of suspended gate field effect transistor. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 441-448.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Subjects: ELEMENTOS DE TRANSIÇÃO, SEMICONDUTORES

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      STEM, Nair; SANTOS FILHO, Sebastião Gomes dos. Nano-crystalline palladium-film catalysis deposited by e-beam evaporation aiming hydrogen sensing. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 171-178, 2010.
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      Stem, N., & Santos Filho, S. G. dos. (2010). Nano-crystalline palladium-film catalysis deposited by e-beam evaporation aiming hydrogen sensing. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 171-178.
    • NLM

      Stem N, Santos Filho SG dos. Nano-crystalline palladium-film catalysis deposited by e-beam evaporation aiming hydrogen sensing. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 171-178.
    • Vancouver

      Stem N, Santos Filho SG dos. Nano-crystalline palladium-film catalysis deposited by e-beam evaporation aiming hydrogen sensing. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 171-178.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Subjects: TRANSISTORES, SEMICONDUTORES

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      SPARVOLI, Marina; CHUBACI, Jose Fernando Diniz; MANSANO, Ronaldo Domingues. Characterization of InN thin films grown by IBAD method. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 165-170, 2010.
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      Sparvoli, M., Chubaci, J. F. D., & Mansano, R. D. (2010). Characterization of InN thin films grown by IBAD method. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 165-170.
    • NLM

      Sparvoli M, Chubaci JFD, Mansano RD. Characterization of InN thin films grown by IBAD method. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 165-170.
    • Vancouver

      Sparvoli M, Chubaci JFD, Mansano RD. Characterization of InN thin films grown by IBAD method. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 165-170.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Assunto: ELETROQUÍMICA

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      DAMIANI, L R; MANSANO, Ronaldo Domingues. Thickness dependence of indium-tin oxide thin films depodited by RF magnetron sputtering. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 117-124, 2010.
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      Damiani, L. R., & Mansano, R. D. (2010). Thickness dependence of indium-tin oxide thin films depodited by RF magnetron sputtering. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 117-124.
    • NLM

      Damiani LR, Mansano RD. Thickness dependence of indium-tin oxide thin films depodited by RF magnetron sputtering. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 117-124.
    • Vancouver

      Damiani LR, Mansano RD. Thickness dependence of indium-tin oxide thin films depodited by RF magnetron sputtering. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 117-124.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Subjects: ELETROQUÍMICA, SILÍCIO

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      HUANCA, Danilo Roque; KIM, Hae Yong; HUANCA, Danilo Roque; SALCEDO, Walter Jaimes. Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 295-303, 2010.
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      Huanca, D. R., Kim, H. Y., Huanca, D. R., & Salcedo, W. J. (2010). Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 295-303.
    • NLM

      Huanca DR, Kim HY, Huanca DR, Salcedo WJ. Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 295-303.
    • Vancouver

      Huanca DR, Kim HY, Huanca DR, Salcedo WJ. Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 295-303.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidades: EP, EESC

    Assunto: ELETROQUÍMICA

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      CACHO, V. D. D.; SIARKOWSKI, Acácio Luiz; MORIMOTO, Nilton Itiro; BORGES, Ben-Hur Viana; KASSAB, Luciana Reyes Pires. Fabrication and characterization of Teo2-ZnO rib waveguides. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 225-229, 2010.
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      Cacho, V. D. D., Siarkowski, A. L., Morimoto, N. I., Borges, B. -H. V., & Kassab, L. R. P. (2010). Fabrication and characterization of Teo2-ZnO rib waveguides. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 225-229.
    • NLM

      Cacho VDD, Siarkowski AL, Morimoto NI, Borges B-HV, Kassab LRP. Fabrication and characterization of Teo2-ZnO rib waveguides. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 225-229.
    • Vancouver

      Cacho VDD, Siarkowski AL, Morimoto NI, Borges B-HV, Kassab LRP. Fabrication and characterization of Teo2-ZnO rib waveguides. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 225-229.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Subjects: ELETROQUÍMICA, NÍQUEL

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      HUANCA, Danilo Roque; SALCEDO, Walter Jaimes. The nickel micro-tubes fabrication by galvanic displacement method using microporus silicon as template. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 179-187, 2010.
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      Huanca, D. R., & Salcedo, W. J. (2010). The nickel micro-tubes fabrication by galvanic displacement method using microporus silicon as template. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 179-187.
    • NLM

      Huanca DR, Salcedo WJ. The nickel micro-tubes fabrication by galvanic displacement method using microporus silicon as template. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 179-187.
    • Vancouver

      Huanca DR, Salcedo WJ. The nickel micro-tubes fabrication by galvanic displacement method using microporus silicon as template. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 179-187.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Subjects: GRANULOMETRIA, MICROSCOPIA ELETRÔNICA

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      MARUTA, Ricardo Hitoshi; KIM, Hae Yong; HUANCA, Danilo Roque; SALCEDO, Walter Jaimes. A new correlation-based granulometry algorithm with application in characterizing porus silicon nanomaterials. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 273-280, 2010.
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      Maruta, R. H., Kim, H. Y., Huanca, D. R., & Salcedo, W. J. (2010). A new correlation-based granulometry algorithm with application in characterizing porus silicon nanomaterials. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 273-280.
    • NLM

      Maruta RH, Kim HY, Huanca DR, Salcedo WJ. A new correlation-based granulometry algorithm with application in characterizing porus silicon nanomaterials. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 273-280.
    • Vancouver

      Maruta RH, Kim HY, Huanca DR, Salcedo WJ. A new correlation-based granulometry algorithm with application in characterizing porus silicon nanomaterials. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 273-280.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Assunto: ELETROQUÍMICA

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      STEM, Nair; SANTOS FILHO, Sebastião Gomes dos. Carbon-modified titanium dioxide deposited by e-beam aiming hydrogen sensing. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 433-439, 2010.
    • APA

      Stem, N., & Santos Filho, S. G. dos. (2010). Carbon-modified titanium dioxide deposited by e-beam aiming hydrogen sensing. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 433-439.
    • NLM

      Stem N, Santos Filho SG dos. Carbon-modified titanium dioxide deposited by e-beam aiming hydrogen sensing. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 433-439.
    • Vancouver

      Stem N, Santos Filho SG dos. Carbon-modified titanium dioxide deposited by e-beam aiming hydrogen sensing. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 433-439.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Subjects: TRANSISTORES, SEMICONDUTORES

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      MARTINO, Márcio Dalla Valle; AGOPIAN, Paula Ghedini Der; MARTINO, João Antonio. Cross-section features influence on surrounding MuGFETs. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 91-98, 2010.
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      Martino, M. D. V., Agopian, P. G. D., & Martino, J. A. (2010). Cross-section features influence on surrounding MuGFETs. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 91-98.
    • NLM

      Martino MDV, Agopian PGD, Martino JA. Cross-section features influence on surrounding MuGFETs. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 91-98.
    • Vancouver

      Martino MDV, Agopian PGD, Martino JA. Cross-section features influence on surrounding MuGFETs. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 91-98.
  • Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP

    Assunto: ELETROQUÍMICA

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      CHRISTIANO, V.; CRIADO, D; SONNENBERG, Victor; SANTOS FILHO, Sebastião Gomes dos. Conductance moddeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films. Microelectronics Technology and Devices - SBMicro 2010, New Jersey, The Electrochemical Society, v. 31, n. 1, p. 333-340, 2010.
    • APA

      Christiano, V., Criado, D., Sonnenberg, V., & Santos Filho, S. G. dos. (2010). Conductance moddeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 333-340.
    • NLM

      Christiano V, Criado D, Sonnenberg V, Santos Filho SG dos. Conductance moddeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 333-340.
    • Vancouver

      Christiano V, Criado D, Sonnenberg V, Santos Filho SG dos. Conductance moddeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 333-340.

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