Characteristics of silicon nitride films deposited by inductively coulped plasma CVD (2000)
Source: SBMicro 2000: proceedings. Conference title: International Conference on Microelectronics and Packaging. Unidade: EP
Subject: CIRCUITOS INTEGRADOS
ABNT
ZAMBOM, Luís da Silva e MANSANO, Ronaldo Domingues e FURLAN, Rogério. Characteristics of silicon nitride films deposited by inductively coulped plasma CVD. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 29 jun. 2022.APA
Zambom, L. da S., Mansano, R. D., & Furlan, R. (2000). Characteristics of silicon nitride films deposited by inductively coulped plasma CVD. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.NLM
Zambom L da S, Mansano RD, Furlan R. Characteristics of silicon nitride films deposited by inductively coulped plasma CVD. SBMicro 2000: proceedings. 2000 ;[citado 2022 jun. 29 ]Vancouver
Zambom L da S, Mansano RD, Furlan R. Characteristics of silicon nitride films deposited by inductively coulped plasma CVD. SBMicro 2000: proceedings. 2000 ;[citado 2022 jun. 29 ]