ReP USP - Resultado da busca

Trabalho de evento
Superconductive fractions in y'BA IND.2'' ('cu ind.1-x''mn ind.X') IND.3''O IND.7's compounds (1988)
Jardim, R. F.; Gama, S; Lima, O F; Torriani, I; Paduan-Filho, A.; Zacarelli, S; Becerra, Carlos Castilla
Fonte: Proceedings. Nome do evento: Latin-American Conference on High Superconductors. Unidade: IF
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ABNT
JARDIM, R. F. et al. Superconductive fractions in y'BA IND.2'' ('cu ind.1-x''mn ind.X') IND.3''O IND.7's compounds. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 01 out. 2024.
APA
Jardim, R. F., Gama, S., Lima, O. F., Torriani, I., Paduan-Filho, A., Zacarelli, S., & Becerra, C. C. (1988). Superconductive fractions in y'BA IND.2'' ('cu ind.1-x''mn ind.X') IND.3''O IND.7's compounds. In Proceedings. Singapore: World Scientific.
NLM
Jardim RF, Gama S, Lima OF, Torriani I, Paduan-Filho A, Zacarelli S, Becerra CC. Superconductive fractions in y'BA IND.2'' ('cu ind.1-x''mn ind.X') IND.3''O IND.7's compounds. Proceedings. 1988 ;[citado 2024 out. 01 ]
Vancouver
Jardim RF, Gama S, Lima OF, Torriani I, Paduan-Filho A, Zacarelli S, Becerra CC. Superconductive fractions in y'BA IND.2'' ('cu ind.1-x''mn ind.X') IND.3''O IND.7's compounds. Proceedings. 1988 ;[citado 2024 out. 01 ]
Parte de monografia/livro
Role played by interstitial 3d transition - metal atoms in gaas (1988)
Scolfaro, L M R; Fazzio, A
Fonte: Current Topics on Semiconductor Physics. Unidade: IF
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ABNT
SCOLFARO, L M R e FAZZIO, A. Role played by interstitial 3d transition - metal atoms in gaas. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 01 out. 2024.
APA
Scolfaro, L. M. R., & Fazzio, A. (1988). Role played by interstitial 3d transition - metal atoms in gaas. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Scolfaro LMR, Fazzio A. Role played by interstitial 3d transition - metal atoms in gaas. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Vancouver
Scolfaro LMR, Fazzio A. Role played by interstitial 3d transition - metal atoms in gaas. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Monografia/livro
Two dimensional models and string theories (1988)
Abdalla, E. (Editor); Abdalla, M C B (Editor)
Unidade: IF
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ABNT
Two dimensional models and string theories. . Singapore: World Scientific. . Acesso em: 01 out. 2024. , 1988
APA
Two dimensional models and string theories. (1988). Two dimensional models and string theories. Singapore: World Scientific.
NLM
Two dimensional models and string theories. 1988 ;[citado 2024 out. 01 ]
Vancouver
Two dimensional models and string theories. 1988 ;[citado 2024 out. 01 ]
Parte de monografia/livro
Resonant helical fields in tbr-1 (1988)
Caldas, Iberê Luiz ; Bender, O W; Fernandes, A S; Heller, M V A P; Kucinski, M Y; Nascimento, Ivan Cunha; Tan, I H; Vannucci, A
Fonte: Fusion Energy and Plasma Physics. Unidade: IF
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ABNT
CALDAS, Iberê Luiz et al. Resonant helical fields in tbr-1. Fusion Energy and Plasma Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 01 out. 2024.
APA
Caldas, I. L., Bender, O. W., Fernandes, A. S., Heller, M. V. A. P., Kucinski, M. Y., Nascimento, I. C., et al. (1988). Resonant helical fields in tbr-1. In Fusion Energy and Plasma Physics. Singapore: World Scientific.
NLM
Caldas IL, Bender OW, Fernandes AS, Heller MVAP, Kucinski MY, Nascimento IC, Tan IH, Vannucci A. Resonant helical fields in tbr-1. In: Fusion Energy and Plasma Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Vancouver
Caldas IL, Bender OW, Fernandes AS, Heller MVAP, Kucinski MY, Nascimento IC, Tan IH, Vannucci A. Resonant helical fields in tbr-1. In: Fusion Energy and Plasma Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Parte de monografia/livro
Deep levels induced by 3d-transition metal impurities in diamond (1988)
Alves, H W L; Leite, J. R.; Alves, J L A
Fonte: Current Topics on Semiconductor Physics. Unidade: IF
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ABNT
ALVES, H W L e LEITE, J. R. e ALVES, J L A. Deep levels induced by 3d-transition metal impurities in diamond. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 01 out. 2024.
APA
Alves, H. W. L., Leite, J. R., & Alves, J. L. A. (1988). Deep levels induced by 3d-transition metal impurities in diamond. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d-transition metal impurities in diamond. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Vancouver
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d-transition metal impurities in diamond. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Parte de monografia/livro
Electric energy independence in brazil and the role of nuclear energy (1988)
Nascimento, Ivan Cunha; Moreira, J R
Fonte: Fusion Energy and Plasma Physics. Unidades: IEE, IF
Assunto: ENERGIA NUCLEAR
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ABNT
NASCIMENTO, Ivan Cunha e MOREIRA, J R. Electric energy independence in brazil and the role of nuclear energy. Fusion Energy and Plasma Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 01 out. 2024.
APA
Nascimento, I. C., & Moreira, J. R. (1988). Electric energy independence in brazil and the role of nuclear energy. In Fusion Energy and Plasma Physics. Singapore: World Scientific.
NLM
Nascimento IC, Moreira JR. Electric energy independence in brazil and the role of nuclear energy. In: Fusion Energy and Plasma Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Vancouver
Nascimento IC, Moreira JR. Electric energy independence in brazil and the role of nuclear energy. In: Fusion Energy and Plasma Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Parte de monografia/livro
Topological defects and phase transitions (1988)
Marques, G C
Fonte: J. Leite Lopes: Festschrift - a Pioneer Physicist in the Third World. Unidade: IF
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ABNT
MARQUES, G C. Topological defects and phase transitions. J. Leite Lopes: Festschrift - a Pioneer Physicist in the Third World. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 01 out. 2024.
APA
Marques, G. C. (1988). Topological defects and phase transitions. In J. Leite Lopes: Festschrift - a Pioneer Physicist in the Third World. Singapore: World Scientific.
NLM
Marques GC. Topological defects and phase transitions. In: J. Leite Lopes: Festschrift - a Pioneer Physicist in the Third World. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Vancouver
Marques GC. Topological defects and phase transitions. In: J. Leite Lopes: Festschrift - a Pioneer Physicist in the Third World. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Parte de monografia/livro
Tbr-1 (brazilian tokamak ) - recent results (1988)
Fagundes, Aluisio Neves; Cruz Junior, D F; Galvao, R M O; Elizondo, J I; Nascimento, Ivan Cunha; Sa, W P; Sanada, Edson Kenzo; Silva, Ruy Pepe da; Tuszel, A G; Vannucci, A; Vuolo, José Henrique
Fonte: Fusion Energy and Plasma Physics. Unidade: IF
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ABNT
FAGUNDES, Aluisio Neves et al. Tbr-1 (brazilian tokamak ) - recent results. Fusion Energy and Plasma Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 01 out. 2024.
APA
Fagundes, A. N., Cruz Junior, D. F., Galvao, R. M. O., Elizondo, J. I., Nascimento, I. C., Sa, W. P., et al. (1988). Tbr-1 (brazilian tokamak ) - recent results. In Fusion Energy and Plasma Physics. Singapore: World Scientific.
NLM
Fagundes AN, Cruz Junior DF, Galvao RMO, Elizondo JI, Nascimento IC, Sa WP, Sanada EK, Silva RP da, Tuszel AG, Vannucci A, Vuolo JH. Tbr-1 (brazilian tokamak ) - recent results. In: Fusion Energy and Plasma Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Vancouver
Fagundes AN, Cruz Junior DF, Galvao RMO, Elizondo JI, Nascimento IC, Sa WP, Sanada EK, Silva RP da, Tuszel AG, Vannucci A, Vuolo JH. Tbr-1 (brazilian tokamak ) - recent results. In: Fusion Energy and Plasma Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Trabalho de evento
Hadron interferometry for expanding sources (1988)
Hama, Yogiro
Fonte: Proceedings. Nome do evento: International Conference on Physics and Astrophysics of Quark-Gluon Plasmas. Unidade: IF
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ABNT
HAMA, Yogiro. Hadron interferometry for expanding sources. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 01 out. 2024.
APA
Hama, Y. (1988). Hadron interferometry for expanding sources. In Proceedings. Singapore: World Scientific.
NLM
Hama Y. Hadron interferometry for expanding sources. Proceedings. 1988 ;[citado 2024 out. 01 ]
Vancouver
Hama Y. Hadron interferometry for expanding sources. Proceedings. 1988 ;[citado 2024 out. 01 ]
Parte de monografia/livro
Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon (1988)
Assali, L. V. C. ; Leite, J. R.
Fonte: Current Topics on Semiconductor Physics. Unidade: IF
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ABNT
ASSALI, L. V. C. e LEITE, J. R. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 01 out. 2024.
APA
Assali, L. V. C., & Leite, J. R. (1988). Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Vancouver
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Trabalho de evento-resumo
Theoretical studies of ' (GAAS) IND.N'' (ALAS) IND.N' superlattices (1988)
Ferraz, A. C.; Srivastava, G. P.
Fonte: Proceedings. Nome do evento: Escola Brasileira de Fisica de Semicondutores. Unidade: IF
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ABNT
FERRAZ, A. C. e SRIVASTAVA, G. P. Theoretical studies of ' (GAAS) IND.N'' (ALAS) IND.N' superlattices. 1988, Anais.. Sisngapore: World Scientific, 1988. . Acesso em: 01 out. 2024.
APA
Ferraz, A. C., & Srivastava, G. P. (1988). Theoretical studies of ' (GAAS) IND.N'' (ALAS) IND.N' superlattices. In Proceedings. Sisngapore: World Scientific.
NLM
Ferraz AC, Srivastava GP. Theoretical studies of ' (GAAS) IND.N'' (ALAS) IND.N' superlattices. Proceedings. 1988 ;[citado 2024 out. 01 ]
Vancouver
Ferraz AC, Srivastava GP. Theoretical studies of ' (GAAS) IND.N'' (ALAS) IND.N' superlattices. Proceedings. 1988 ;[citado 2024 out. 01 ]
Trabalho de evento-resumo
Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon (1988)
Assali, L. V. C. ; Leite, J. R.
Fonte: Proceedings. Nome do evento: Escola Brasileira de Fisica de Semicondutores. Unidade: IF
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ABNT
ASSALI, L. V. C. e LEITE, J. R. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 01 out. 2024.
APA
Assali, L. V. C., & Leite, J. R. (1988). Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In Proceedings. Singapore: World Scientific.
NLM
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. Proceedings. 1988 ;[citado 2024 out. 01 ]
Vancouver
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. Proceedings. 1988 ;[citado 2024 out. 01 ]
Trabalho de evento-resumo
Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy (1988)
Dal Pino Junior, A; Silva, E C F; Leite, J. R.
Fonte: Proceedings. Nome do evento: Escola Brasileira de Fisica de Semicondutores. Unidade: IF
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ABNT
DAL PINO JUNIOR, A e SILVA, E C F e LEITE, J. R. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 01 out. 2024.
APA
Dal Pino Junior, A., Silva, E. C. F., & Leite, J. R. (1988). Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. In Proceedings. Singapore: World Scientific.
NLM
Dal Pino Junior A, Silva ECF, Leite JR. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. Proceedings. 1988 ;[citado 2024 out. 01 ]
Vancouver
Dal Pino Junior A, Silva ECF, Leite JR. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. Proceedings. 1988 ;[citado 2024 out. 01 ]
Parte de monografia/livro
Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si (1988)
Silva, E C F; Assali, L. V. C. ; Leite, J. R.; Dal Pino Junior, A
Fonte: Current Topics on Semiconductor Physics. Unidade: IF
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ABNT
SILVA, E C F et al. Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 01 out. 2024.
APA
Silva, E. C. F., Assali, L. V. C., Leite, J. R., & Dal Pino Junior, A. (1988). Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Silva ECF, Assali LVC, Leite JR, Dal Pino Junior A. Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Vancouver
Silva ECF, Assali LVC, Leite JR, Dal Pino Junior A. Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Parte de monografia/livro
Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields (1988)
Oliveira, G M G; Gomes, V M S; Leite, J. R.; Chaves, A S
Fonte: Current Topics on Semiconductor Physics. Unidade: IF
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ABNT
OLIVEIRA, G M G et al. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 01 out. 2024.
APA
Oliveira, G. M. G., Gomes, V. M. S., Leite, J. R., & Chaves, A. S. (1988). Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Oliveira GMG, Gomes VMS, Leite JR, Chaves AS. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Vancouver
Oliveira GMG, Gomes VMS, Leite JR, Chaves AS. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Trabalho de evento-resumo
Role playde by interstitial 3d transition-metal atoms in gaas (1988)
Scolfaro, L M R; Fazzio, A
Fonte: Proceedings. Nome do evento: Escola Brasileira de Fisica de Semicondutores. Unidade: IF
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ABNT
SCOLFARO, L M R e FAZZIO, A. Role playde by interstitial 3d transition-metal atoms in gaas. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 01 out. 2024.
APA
Scolfaro, L. M. R., & Fazzio, A. (1988). Role playde by interstitial 3d transition-metal atoms in gaas. In Proceedings. Singapore: World Scientific.
NLM
Scolfaro LMR, Fazzio A. Role playde by interstitial 3d transition-metal atoms in gaas. Proceedings. 1988 ;[citado 2024 out. 01 ]
Vancouver
Scolfaro LMR, Fazzio A. Role playde by interstitial 3d transition-metal atoms in gaas. Proceedings. 1988 ;[citado 2024 out. 01 ]
Trabalho de evento-resumo
Deep levels induced by 3d transition metal impurities in diamond (1988)
Alves, H W L; Leite, J. R.; Alves, J L A
Fonte: Proceedings. Nome do evento: Escola Brasileira de Fisica de Semicondutores. Unidade: IF
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ABNT
ALVES, H W L e LEITE, J. R. e ALVES, J L A. Deep levels induced by 3d transition metal impurities in diamond. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 01 out. 2024.
APA
Alves, H. W. L., Leite, J. R., & Alves, J. L. A. (1988). Deep levels induced by 3d transition metal impurities in diamond. In Proceedings. Singapore: World Scientific.
NLM
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d transition metal impurities in diamond. Proceedings. 1988 ;[citado 2024 out. 01 ]
Vancouver
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d transition metal impurities in diamond. Proceedings. 1988 ;[citado 2024 out. 01 ]
Parte de monografia/livro
Correlation effects nad structural stability in si: o, s< and 'N POT.-' (1988)
Antonelli, A; Valle do Amaral, O A; Canuto, Sylvio; Fazzio, A
Fonte: Current Topics on Semiconductor Physics. Unidade: IF
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ABNT
ANTONELLI, A et al. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 01 out. 2024.
APA
Antonelli, A., Valle do Amaral, O. A., Canuto, S., & Fazzio, A. (1988). Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Antonelli A, Valle do Amaral OA, Canuto S, Fazzio A. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Vancouver
Antonelli A, Valle do Amaral OA, Canuto S, Fazzio A. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Monografia/livro
Current topics on semiconductor physics. Brazilian School of Semiconductor Physics, 3, Campinas, 1987. Proceedings (1988)
Hipólito, Oscar (Editor); Fazzio, A (Editor); Marques, G E (Editor)
Unidades: IFSC, IF
Assuntos: SEMICONDUTORES, FÍSICA
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ABNT
Current topics on semiconductor physics. Brazilian School of Semiconductor Physics, 3, Campinas, 1987. Proceedings. . Singapore: World Scientific. . Acesso em: 01 out. 2024. , 1988
APA
Current topics on semiconductor physics. Brazilian School of Semiconductor Physics, 3, Campinas, 1987. Proceedings. (1988). Current topics on semiconductor physics. Brazilian School of Semiconductor Physics, 3, Campinas, 1987. Proceedings. Singapore: World Scientific.
NLM
Current topics on semiconductor physics. Brazilian School of Semiconductor Physics, 3, Campinas, 1987. Proceedings. 1988 ;[citado 2024 out. 01 ]
Vancouver
Current topics on semiconductor physics. Brazilian School of Semiconductor Physics, 3, Campinas, 1987. Proceedings. 1988 ;[citado 2024 out. 01 ]
Parte de monografia/livro
Study of 4d and 5d impurities in gallium arsenide (1988)
Makiuchi, N; Macedo, T C; Caldas, Marília Junqueira; Fazzio, A
Fonte: Current Topics on Semiconductor Physics. Unidade: IF
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ABNT
MAKIUCHI, N et al. Study of 4d and 5d impurities in gallium arsenide. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 01 out. 2024.
APA
Makiuchi, N., Macedo, T. C., Caldas, M. J., & Fazzio, A. (1988). Study of 4d and 5d impurities in gallium arsenide. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Makiuchi N, Macedo TC, Caldas MJ, Fazzio A. Study of 4d and 5d impurities in gallium arsenide. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]
Vancouver
Makiuchi N, Macedo TC, Caldas MJ, Fazzio A. Study of 4d and 5d impurities in gallium arsenide. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 01 ]

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