Source: Polycristalline Semiconductors VI - Materials, Technologies, and Large Area Electronics. Conference titles: International Conference on Polycrystalline Semiconductors. Unidade: EP
Assunto: SEMICONDUTORES
ABNT
FERREIRA, Eduardo dos Santos e MORIMOTO, Nilton Itiro. Low-pressure chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS) and its analysis: application to power diode passivation. Polycristalline Semiconductors VI - Materials, Technologies, and Large Area Electronics. Tradução . Zuerich: Scitec, 2001. . . Acesso em: 27 set. 2024.APA
Ferreira, E. dos S., & Morimoto, N. I. (2001). Low-pressure chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS) and its analysis: application to power diode passivation. In Polycristalline Semiconductors VI - Materials, Technologies, and Large Area Electronics. Zuerich: Scitec.NLM
Ferreira E dos S, Morimoto NI. Low-pressure chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS) and its analysis: application to power diode passivation. In: Polycristalline Semiconductors VI - Materials, Technologies, and Large Area Electronics. Zuerich: Scitec; 2001. [citado 2024 set. 27 ]Vancouver
Ferreira E dos S, Morimoto NI. Low-pressure chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS) and its analysis: application to power diode passivation. In: Polycristalline Semiconductors VI - Materials, Technologies, and Large Area Electronics. Zuerich: Scitec; 2001. [citado 2024 set. 27 ]