Source: Resumo. Conference titles: International Conference on Ion Beam Analysis. Unidade: IF
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
ABNT
CIRNE, K H et al. Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. 2011, Anais.. Itapema: IBA, 2011. . Acesso em: 29 jan. 2023.APA
Cirne, K. H., Lima, J. A. de, Seixas Jr, L. E., Silveira, M. A. G., Barbosa, M. D. L., Tabacniks, M. H., et al. (2011). Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. In Resumo. Itapema: IBA.NLM
Cirne KH, Lima JA de, Seixas Jr LE, Silveira MAG, Barbosa MDL, Tabacniks MH, Added N, Medina NH, Gimenez SP, Melo W. Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. Resumo. 2011 ;[citado 2023 jan. 29 ]Vancouver
Cirne KH, Lima JA de, Seixas Jr LE, Silveira MAG, Barbosa MDL, Tabacniks MH, Added N, Medina NH, Gimenez SP, Melo W. Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. Resumo. 2011 ;[citado 2023 jan. 29 ]