ReP USP - Resultado da busca

Parte de monografia/livro
A physically-based continuous model for graded-channel SOI MOSFET (2002)
Pavanello, Marcelo Antonio; Iniguez, Benjamin; Martino, João Antonio ; Flandre, Denis
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio; INIGUEZ, Benjamin; MARTINO, João Antonio; FLANDRE, Denis. A physically-based continuous model for graded-channel SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Pavanello, M. A., Iniguez, B., Martino, J. A., & Flandre, D. (2002). A physically-based continuous model for graded-channel SOI MOSFET. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Iniguez B, Martino JA, Flandre D. A physically-based continuous model for graded-channel SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Pavanello MA, Iniguez B, Martino JA, Flandre D. A physically-based continuous model for graded-channel SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Porous silicon sacrifical layers applied on micromechanical structures fabrication (2002)
Dantas, Michel Oliveira da Silva; Galeazzo, Elisabete ; Peres, Henrique Estanislau Maldonado; Ramírez Fernandez, Francisco Javier
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
DANTAS, Michel Oliveira da Silva; GALEAZZO, Elisabete; PERES, Henrique Estanislau Maldonado; RAMÍREZ FERNANDEZ, Francisco Javier. Porous silicon sacrifical layers applied on micromechanical structures fabrication. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Dantas, M. O. da S., Galeazzo, E., Peres, H. E. M., & Ramírez Fernandez, F. J. (2002). Porous silicon sacrifical layers applied on micromechanical structures fabrication. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Porous silicon sacrifical layers applied on micromechanical structures fabrication. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Porous silicon sacrifical layers applied on micromechanical structures fabrication. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications (2002)
Santos, R.E.; Doi, Ioshiaki; Diniz, J. A.; Swart, Jacobus Willibrordus; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SANTOS, R.E.; DOI, Ioshiaki; DINIZ, J. A.; SWART, Jacobus Willibrordus; SANTOS FILHO, Sebastião Gomes dos. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Santos, R. E., Doi, I., Diniz, J. A., Swart, J. W., & Santos Filho, S. G. dos. (2002). Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Santos RE, Doi I, Diniz JA, Swart JW, Santos Filho SG dos. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Santos RE, Doi I, Diniz JA, Swart JW, Santos Filho SG dos. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
A simple analytical model of graded-channel SOI nMOSFET transconductance (2002)
Gimenez, Salvador Pinillos; Pavanello, Marcelo Antonio; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GIMENEZ, Salvador Pinillos; PAVANELLO, Marcelo Antonio; MARTINO, João Antonio. A simple analytical model of graded-channel SOI nMOSFET transconductance. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Gimenez, S. P., Pavanello, M. A., & Martino, J. A. (2002). A simple analytical model of graded-channel SOI nMOSFET transconductance. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Gimenez SP, Pavanello MA, Martino JA. A simple analytical model of graded-channel SOI nMOSFET transconductance. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Gimenez SP, Pavanello MA, Martino JA. A simple analytical model of graded-channel SOI nMOSFET transconductance. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures (2002)
Galeti, Milene; Pavanello, Marcelo Antonio; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GALETI, Milene; PAVANELLO, Marcelo Antonio; MARTINO, João Antonio. Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Galeti, M., Pavanello, M. A., & Martino, J. A. (2002). Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Galeti M, Pavanello MA, Martino JA. Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Galeti M, Pavanello MA, Martino JA. Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Semiconductor light emitting diodes: an empirical study for use in fiber optic gyroscopes (2002)
Ferreira, Eduardo dos Santos; Morimoto, Nilton Itiro; Carvalho, Ricardo Teixeira de
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
FERREIRA, Eduardo dos Santos; MORIMOTO, Nilton Itiro; CARVALHO, Ricardo Teixeira de. Semiconductor light emitting diodes: an empirical study for use in fiber optic gyroscopes. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Ferreira, E. dos S., Morimoto, N. I., & Carvalho, R. T. de. (2002). Semiconductor light emitting diodes: an empirical study for use in fiber optic gyroscopes. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Ferreira E dos S, Morimoto NI, Carvalho RT de. Semiconductor light emitting diodes: an empirical study for use in fiber optic gyroscopes. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Ferreira E dos S, Morimoto NI, Carvalho RT de. Semiconductor light emitting diodes: an empirical study for use in fiber optic gyroscopes. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Formation of nickel monosilicide onto (100) silicon wafer surfaces (2002)
Reis, Ronaldo Willian; Santos Filho, Sebastião Gomes dos ; Laganá, Armando Antonio Maria ; Doi, Ioshiaki; Swart, Jacobus Willibrordus
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
REIS, Ronaldo Willian; SANTOS FILHO, Sebastião Gomes dos; LAGANÁ, Armando Antonio Maria; DOI, Ioshiaki; SWART, Jacobus Willibrordus. Formation of nickel monosilicide onto (100) silicon wafer surfaces. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Reis, R. W., Santos Filho, S. G. dos, Laganá, A. A. M., Doi, I., & Swart, J. W. (2002). Formation of nickel monosilicide onto (100) silicon wafer surfaces. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Reis RW, Santos Filho SG dos, Laganá AAM, Doi I, Swart JW. Formation of nickel monosilicide onto (100) silicon wafer surfaces. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Reis RW, Santos Filho SG dos, Laganá AAM, Doi I, Swart JW. Formation of nickel monosilicide onto (100) silicon wafer surfaces. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes (2002)
Navia, Alan Rodrigo; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NAVIA, Alan Rodrigo; SANTOS FILHO, Sebastião Gomes dos. Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Navia, A. R., & Santos Filho, S. G. dos. (2002). Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Navia AR, Santos Filho SG dos. Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Navia AR, Santos Filho SG dos. Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Implementation of an optical integrated pressure sensor and experimental results (2002)
Siarkowski, Acácio Luiz; Bulla, Douglas Anderson Pereira; Morimoto, Nilton Itiro
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SIARKOWSKI, Acácio Luiz; BULLA, Douglas Anderson Pereira; MORIMOTO, Nilton Itiro. Implementation of an optical integrated pressure sensor and experimental results. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Siarkowski, A. L., Bulla, D. A. P., & Morimoto, N. I. (2002). Implementation of an optical integrated pressure sensor and experimental results. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Siarkowski AL, Bulla DAP, Morimoto NI. Implementation of an optical integrated pressure sensor and experimental results. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Siarkowski AL, Bulla DAP, Morimoto NI. Implementation of an optical integrated pressure sensor and experimental results. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor (2002)
Sonnenberg, Victor; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SONNENBERG, Victor; MARTINO, João Antonio. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Sonnenberg, V., & Martino, J. A. (2002). Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Sonnenberg V, Martino JA. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Sonnenberg V, Martino JA. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors (2002)
Gonçalves, L. C. D.; Silva, Antônio Nélson Rodrigues da; Alfano, C.F.; Santos, J. C.; Morimoto, Nilton Itiro
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GONÇALVES, L. C. D.; SILVA, Antônio Nélson Rodrigues da; ALFANO, C.F.; SANTOS, J. C.; MORIMOTO, Nilton Itiro. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Gonçalves, L. C. D., Silva, A. N. R. da, Alfano, C. F., Santos, J. C., & Morimoto, N. I. (2002). Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Gonçalves LCD, Silva ANR da, Alfano CF, Santos JC, Morimoto NI. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Gonçalves LCD, Silva ANR da, Alfano CF, Santos JC, Morimoto NI. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K (2002)
Pavanello, Marcelo Antonio; Martino, João Antonio ; Mercha, A.; Rafi, J.M.; Simoen, Eddy; Claeys, C.; Van Meer, H.; De Meyer, K.
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio; MARTINO, João Antonio; MERCHA, A.; et al. Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Pavanello, M. A., Martino, J. A., Mercha, A., Rafi, J. M., Simoen, E., Claeys, C., et al. (2002). Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Polarization-difference imaging technique for material characterization: algorithm and some applications (2002)
Araújo, Hugo Puertas de; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ARAÚJO, Hugo Puertas de; SANTOS FILHO, Sebastião Gomes dos. Polarization-difference imaging technique for material characterization: algorithm and some applications. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Araújo, H. P. de, & Santos Filho, S. G. dos. (2002). Polarization-difference imaging technique for material characterization: algorithm and some applications. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Araújo HP de, Santos Filho SG dos. Polarization-difference imaging technique for material characterization: algorithm and some applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Araújo HP de, Santos Filho SG dos. Polarization-difference imaging technique for material characterization: algorithm and some applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C) (2002)
Viana, C.E.; Santos, J.L.R.; Morimoto, Nilton Itiro
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
VIANA, C.E.; SANTOS, J.L.R.; MORIMOTO, Nilton Itiro. High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Viana, C. E., Santos, J. L. R., & Morimoto, N. I. (2002). High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Viana CE, Santos JLR, Morimoto NI. High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Viana CE, Santos JLR, Morimoto NI. High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Characterization of SF6 plasmas by RF electrical measurements (2002)
Pisani, Marcelo Bento; Verdonck, Patrick Bernard
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PISANI, Marcelo Bento; VERDONCK, Patrick Bernard. Characterization of SF6 plasmas by RF electrical measurements. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Pisani, M. B., & Verdonck, P. B. (2002). Characterization of SF6 plasmas by RF electrical measurements. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pisani MB, Verdonck PB. Characterization of SF6 plasmas by RF electrical measurements. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Pisani MB, Verdonck PB. Characterization of SF6 plasmas by RF electrical measurements. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Difference between kink and bipolar parasitic effects in thin film SOI MOSFET (2002)
Hoashi, Paulo Tetsuo; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
HOASHI, Paulo Tetsuo; MARTINO, João Antonio. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Hoashi, P. T., & Martino, J. A. (2002). Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Hoashi PT, Martino JA. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Hoashi PT, Martino JA. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Effect of stencil alignment on the solder beading in SMT process (2002)
Silva, Flávio Sousa; Oka, Mauricio Massazumi
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SILVA, Flávio Sousa; OKA, Mauricio Massazumi. Effect of stencil alignment on the solder beading in SMT process. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Silva, F. S., & Oka, M. M. (2002). Effect of stencil alignment on the solder beading in SMT process. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Silva FS, Oka MM. Effect of stencil alignment on the solder beading in SMT process. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Silva FS, Oka MM. Effect of stencil alignment on the solder beading in SMT process. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Phosphorus implantation on near stoichiometric a-SIC:H films (2002)
Oliveira, A. R.; Paez Carreño, Marcelo Nelson
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
OLIVEIRA, A. R.; PAEZ CARREÑO, Marcelo Nelson. Phosphorus implantation on near stoichiometric a-SIC:H films. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Oliveira, A. R., & Paez Carreño, M. N. (2002). Phosphorus implantation on near stoichiometric a-SIC:H films. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Oliveira AR, Paez Carreño MN. Phosphorus implantation on near stoichiometric a-SIC:H films. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Oliveira AR, Paez Carreño MN. Phosphorus implantation on near stoichiometric a-SIC:H films. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures (2002)
Páez Carreño, Marcelo Nelson ; Lopes, A.T.; Alayo Chávez, Marco Isaías ; Pereyra, Inés
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PÁEZ CARREÑO, Marcelo Nelson; LOPES, A.T.; ALAYO CHÁVEZ, Marco Isaías; PEREYRA, Inés. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Páez Carreño, M. N., Lopes, A. T., Alayo Chávez, M. I., & Pereyra, I. (2002). 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Parte de monografia/livro
Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy; Claeys, C.
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NICOLETT, Aparecido Sirley; MARTINO, João Antonio; SIMOEN, Eddy; CLAEYS, C. Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.

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