A physically-based continuous model for graded-channel SOI MOSFET (2002)
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
ABNT
PAVANELLO, Marcelo Antonio; INIGUEZ, Benjamin; MARTINO, João Antonio; FLANDRE, Denis. A physically-based continuous model for graded-channel SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002.APA
Pavanello, M. A., Iniguez, B., Martino, J. A., & Flandre, D. (2002). A physically-based continuous model for graded-channel SOI MOSFET. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.NLM
Pavanello MA, Iniguez B, Martino JA, Flandre D. A physically-based continuous model for graded-channel SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.Vancouver
Pavanello MA, Iniguez B, Martino JA, Flandre D. A physically-based continuous model for graded-channel SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002.