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Parte de monografia/livro
Role played by interstitial 3d transition - metal atoms in gaas (1988)
Scolfaro, L M R; Fazzio, A
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCOLFARO, L M R e FAZZIO, A. Role played by interstitial 3d transition - metal atoms in gaas. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 28 mar. 2023.
APA
Scolfaro, L. M. R., & Fazzio, A. (1988). Role played by interstitial 3d transition - metal atoms in gaas. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Scolfaro LMR, Fazzio A. Role played by interstitial 3d transition - metal atoms in gaas. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Vancouver
Scolfaro LMR, Fazzio A. Role played by interstitial 3d transition - metal atoms in gaas. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Parte de monografia/livro
Deep levels induced by 3d-transition metal impurities in diamond (1988)
Alves, H W L; Leite, J. R.; Alves, J L A
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H W L e LEITE, J. R. e ALVES, J L A. Deep levels induced by 3d-transition metal impurities in diamond. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 28 mar. 2023.
APA
Alves, H. W. L., Leite, J. R., & Alves, J. L. A. (1988). Deep levels induced by 3d-transition metal impurities in diamond. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d-transition metal impurities in diamond. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Vancouver
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d-transition metal impurities in diamond. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Parte de monografia/livro
Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon (1988)
Assali, L. V. C. ; Leite, J. R.
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ASSALI, L. V. C. e LEITE, J. R. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 28 mar. 2023.
APA
Assali, L. V. C., & Leite, J. R. (1988). Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Vancouver
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Parte de monografia/livro
Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si (1988)
Silva, E C F; Assali, L. V. C. ; Leite, J. R.; Dal Pino Junior, A
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, E C F et al. Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 28 mar. 2023.
APA
Silva, E. C. F., Assali, L. V. C., Leite, J. R., & Dal Pino Junior, A. (1988). Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Silva ECF, Assali LVC, Leite JR, Dal Pino Junior A. Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Vancouver
Silva ECF, Assali LVC, Leite JR, Dal Pino Junior A. Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Parte de monografia/livro
Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields (1988)
Oliveira, G M G; Gomes, V M S; Leite, J. R.; Chaves, A S
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OLIVEIRA, G M G et al. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 28 mar. 2023.
APA
Oliveira, G. M. G., Gomes, V. M. S., Leite, J. R., & Chaves, A. S. (1988). Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Oliveira GMG, Gomes VMS, Leite JR, Chaves AS. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Vancouver
Oliveira GMG, Gomes VMS, Leite JR, Chaves AS. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Parte de monografia/livro
Correlation effects nad structural stability in si: o, s< and 'N POT.-' (1988)
Antonelli, A; Valle do Amaral, O A; Canuto, Sylvio; Fazzio, A
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ANTONELLI, A et al. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 28 mar. 2023.
APA
Antonelli, A., Valle do Amaral, O. A., Canuto, S., & Fazzio, A. (1988). Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Antonelli A, Valle do Amaral OA, Canuto S, Fazzio A. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Vancouver
Antonelli A, Valle do Amaral OA, Canuto S, Fazzio A. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Parte de monografia/livro
Study of 4d and 5d impurities in gallium arsenide (1988)
Makiuchi, N; Macedo, T C; Caldas, Marília Junqueira; Fazzio, A
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAKIUCHI, N et al. Study of 4d and 5d impurities in gallium arsenide. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 28 mar. 2023.
APA
Makiuchi, N., Macedo, T. C., Caldas, M. J., & Fazzio, A. (1988). Study of 4d and 5d impurities in gallium arsenide. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Makiuchi N, Macedo TC, Caldas MJ, Fazzio A. Study of 4d and 5d impurities in gallium arsenide. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Vancouver
Makiuchi N, Macedo TC, Caldas MJ, Fazzio A. Study of 4d and 5d impurities in gallium arsenide. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Parte de monografia/livro
Charge state stability of transition metals in semiconductors: negative u (1988)
Mota, R.; Fazzio, A
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MOTA, R. e FAZZIO, A. Charge state stability of transition metals in semiconductors: negative u. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 28 mar. 2023.
APA
Mota, R., & Fazzio, A. (1988). Charge state stability of transition metals in semiconductors: negative u. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Mota R, Fazzio A. Charge state stability of transition metals in semiconductors: negative u. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Vancouver
Mota R, Fazzio A. Charge state stability of transition metals in semiconductors: negative u. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Parte de monografia/livro
Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy (1988)
Dal Pino Junior, A; Silva, E C F; Leite, J. R.
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DAL PINO JUNIOR, A e SILVA, E C F e LEITE, J. R. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 28 mar. 2023.
APA
Dal Pino Junior, A., Silva, E. C. F., & Leite, J. R. (1988). Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Dal Pino Junior A, Silva ECF, Leite JR. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]
Vancouver
Dal Pino Junior A, Silva ECF, Leite JR. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2023 mar. 28 ]

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