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Artigo de periodico
μ-near-zero metamaterial slabs for a new concept of plasmonic sensing platforms (2018)
Girón-Sedas, J. A.; Oliveira Junior, Osvaldo Novais de ; Mejía-Salazar, J. R.
Source: Superlattices and Microstructures. Unidade: IFSC
Subjects: POLÍMEROS (MATERIAIS), SENSOR, FILMES FINOS
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ABNT
GIRÓN-SEDAS, J. A. e OLIVEIRA JUNIOR, Osvaldo Novais de e MEJÍA-SALAZAR, J. R. μ-near-zero metamaterial slabs for a new concept of plasmonic sensing platforms. Superlattices and Microstructures, v. 117, p. 423-428, 2018Tradução . . Disponível em: https://doi.org/10.1016/j.spmi.2018.03.062. Acesso em: 02 nov. 2025.
APA
Girón-Sedas, J. A., Oliveira Junior, O. N. de, & Mejía-Salazar, J. R. (2018). μ-near-zero metamaterial slabs for a new concept of plasmonic sensing platforms. Superlattices and Microstructures, 117, 423-428. doi:10.1016/j.spmi.2018.03.062
NLM
Girón-Sedas JA, Oliveira Junior ON de, Mejía-Salazar JR. μ-near-zero metamaterial slabs for a new concept of plasmonic sensing platforms [Internet]. Superlattices and Microstructures. 2018 ; 117 423-428.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1016/j.spmi.2018.03.062
Vancouver
Girón-Sedas JA, Oliveira Junior ON de, Mejía-Salazar JR. μ-near-zero metamaterial slabs for a new concept of plasmonic sensing platforms [Internet]. Superlattices and Microstructures. 2018 ; 117 423-428.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1016/j.spmi.2018.03.062
Artigo de periodico
Determination of mobility edge in presence of metal-to-insulator transition (2017)
Tito, M. A.; Pusep, Yuri A
Source: Superlattices and Microstructures. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, ELÉTRONS, FOTOLUMINESCÊNCIA
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ABNT
TITO, M. A. e PUSEP, Yuri A. Determination of mobility edge in presence of metal-to-insulator transition. Superlattices and Microstructures, v. 104, p. 156-161, 2017Tradução . . Disponível em: https://doi.org/10.1016/j.spmi.2016.12.060. Acesso em: 02 nov. 2025.
APA
Tito, M. A., & Pusep, Y. A. (2017). Determination of mobility edge in presence of metal-to-insulator transition. Superlattices and Microstructures, 104, 156-161. doi:10.1016/j.spmi.2016.12.060
NLM
Tito MA, Pusep YA. Determination of mobility edge in presence of metal-to-insulator transition [Internet]. Superlattices and Microstructures. 2017 ; 104 156-161.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1016/j.spmi.2016.12.060
Vancouver
Tito MA, Pusep YA. Determination of mobility edge in presence of metal-to-insulator transition [Internet]. Superlattices and Microstructures. 2017 ; 104 156-161.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1016/j.spmi.2016.12.060
Artigo de periodico
Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells (2017)
Aquino, V M de; Iwamoto, H; Dias, I F L; Laureto, E; Silva, M A T da; Silva, Euzi Conceicao Fernandes da; Quivy, Alain Andre
Source: Superlattices and Microstructures. Unidade: IF
Subjects: POÇOS QUÂNTICOS, FOTODETECTORES, ELETRÔNICA QUÂNTICA
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ABNT
AQUINO, V M de et al. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells. Superlattices and Microstructures, v. 101, n. ja, p. 236-243, 2017Tradução . . Disponível em: https://doi.org/10.1016/j.spmi.2016.11.042. Acesso em: 02 nov. 2025.
APA
Aquino, V. M. de, Iwamoto, H., Dias, I. F. L., Laureto, E., Silva, M. A. T. da, Silva, E. C. F. da, & Quivy, A. A. (2017). Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells. Superlattices and Microstructures, 101( ja), 236-243. doi:10.1016/j.spmi.2016.11.042
NLM
Aquino VM de, Iwamoto H, Dias IFL, Laureto E, Silva MAT da, Silva ECF da, Quivy AA. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells [Internet]. Superlattices and Microstructures. 2017 ; 101( ja): 236-243.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1016/j.spmi.2016.11.042
Vancouver
Aquino VM de, Iwamoto H, Dias IFL, Laureto E, Silva MAT da, Silva ECF da, Quivy AA. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells [Internet]. Superlattices and Microstructures. 2017 ; 101( ja): 236-243.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1016/j.spmi.2016.11.042
Artigo de periodico
Simulation of the dark current of quantum-well infrared photodetectors (2017)
Claro, M. S.; Fernandes, F. M.; Silva, Euzi Conceicao Fernandes da; Quivy, Alain Andre
Source: Superlattices and Microstructures. Unidade: IF
Subjects: FOTODETECTORES, SEMICONDUTORES
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ABNT
CLARO, M. S. et al. Simulation of the dark current of quantum-well infrared photodetectors. Superlattices and Microstructures, v. 104, p. 232-239, 2017Tradução . . Disponível em: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via*3Dihub. Acesso em: 02 nov. 2025.
APA
Claro, M. S., Fernandes, F. M., Silva, E. C. F. da, & Quivy, A. A. (2017). Simulation of the dark current of quantum-well infrared photodetectors. Superlattices and Microstructures, 104, 232-239. doi:10.1016/j.spmi.2017.02.015
NLM
Claro MS, Fernandes FM, Silva ECF da, Quivy AA. Simulation of the dark current of quantum-well infrared photodetectors [Internet]. Superlattices and Microstructures. 2017 ; 104 232-239.[citado 2025 nov. 02 ] Available from: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via*3Dihub
Vancouver
Claro MS, Fernandes FM, Silva ECF da, Quivy AA. Simulation of the dark current of quantum-well infrared photodetectors [Internet]. Superlattices and Microstructures. 2017 ; 104 232-239.[citado 2025 nov. 02 ] Available from: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via*3Dihub
Artigo de periodico
Radial multiple quantum well GaAs/AlGaAs heterostructure formed in nanowires (2016)
Tito, M. A.; Tavares, B. G. M.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Superlattices and Microstructures. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, MATERIAIS NANOESTRUTURADOS, FOTOLUMINESCÊNCIA
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ABNT
TITO, M. A. et al. Radial multiple quantum well GaAs/AlGaAs heterostructure formed in nanowires. Superlattices and Microstructures, v. 100, p. 918-923, 2016Tradução . . Disponível em: https://doi.org/10.1016/j.spmi.2016.10.048. Acesso em: 02 nov. 2025.
APA
Tito, M. A., Tavares, B. G. M., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2016). Radial multiple quantum well GaAs/AlGaAs heterostructure formed in nanowires. Superlattices and Microstructures, 100, 918-923. doi:10.1016/j.spmi.2016.10.048
NLM
Tito MA, Tavares BGM, Arakaki H, Souza CA de, Pusep YA. Radial multiple quantum well GaAs/AlGaAs heterostructure formed in nanowires [Internet]. Superlattices and Microstructures. 2016 ; 100 918-923.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1016/j.spmi.2016.10.048
Vancouver
Tito MA, Tavares BGM, Arakaki H, Souza CA de, Pusep YA. Radial multiple quantum well GaAs/AlGaAs heterostructure formed in nanowires [Internet]. Superlattices and Microstructures. 2016 ; 100 918-923.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1016/j.spmi.2016.10.048
Artigo de periodico
Temperature dependence of excitonic transitions in 'Al IND.X''Ga IND.1-X'As/GaAs quantum wells (2001)
Lourenço, S A; Dias, I F L; Duarte, J L; Laureto, E; Iwamoto, H; Meneses, E A; Leite, J. R.
Source: Superlattices and Microstructures. Unidade: IF
Subjects: SEMICONDUTORES, INTERAÇÕES NUCLEARES
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ABNT
LOURENÇO, S A et al. Temperature dependence of excitonic transitions in 'Al IND.X''Ga IND.1-X'As/GaAs quantum wells. Superlattices and Microstructures, v. 29, n. 2, p. 225-231, 2001Tradução . . Disponível em: http://www.idealibrary.com/links/doi/10.1006/spmi.2000.0959/pdf. Acesso em: 02 nov. 2025.
APA
Lourenço, S. A., Dias, I. F. L., Duarte, J. L., Laureto, E., Iwamoto, H., Meneses, E. A., & Leite, J. R. (2001). Temperature dependence of excitonic transitions in 'Al IND.X''Ga IND.1-X'As/GaAs quantum wells. Superlattices and Microstructures, 29( 2), 225-231. Recuperado de http://www.idealibrary.com/links/doi/10.1006/spmi.2000.0959/pdf
NLM
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Iwamoto H, Meneses EA, Leite JR. Temperature dependence of excitonic transitions in 'Al IND.X''Ga IND.1-X'As/GaAs quantum wells [Internet]. Superlattices and Microstructures. 2001 ; 29( 2): 225-231.[citado 2025 nov. 02 ] Available from: http://www.idealibrary.com/links/doi/10.1006/spmi.2000.0959/pdf
Vancouver
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Iwamoto H, Meneses EA, Leite JR. Temperature dependence of excitonic transitions in 'Al IND.X''Ga IND.1-X'As/GaAs quantum wells [Internet]. Superlattices and Microstructures. 2001 ; 29( 2): 225-231.[citado 2025 nov. 02 ] Available from: http://www.idealibrary.com/links/doi/10.1006/spmi.2000.0959/pdf
Artigo de periodico
Reflectivity modeling of Si-based amorphous superlattices (2000)
Zeballos-Velasquez, E L; Moncada L, H; Fantini, Márcia Carvalho de Abreu
Source: Superlattices and Microstructures. Unidade: IF
Subjects: MATÉRIA CONDENSADA, QUÍMICA
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ABNT
ZEBALLOS-VELASQUEZ, E L e MONCADA L, H e FANTINI, Márcia Carvalho de Abreu. Reflectivity modeling of Si-based amorphous superlattices. Superlattices and Microstructures, v. 28, n. 3, p. 207-215, 2000Tradução . . Disponível em: https://doi.org/10.1006/spmi.2000.0902. Acesso em: 02 nov. 2025.
APA
Zeballos-Velasquez, E. L., Moncada L, H., & Fantini, M. C. de A. (2000). Reflectivity modeling of Si-based amorphous superlattices. Superlattices and Microstructures, 28( 3), 207-215. doi:10.1006/spmi.2000.0902
NLM
Zeballos-Velasquez EL, Moncada L H, Fantini MC de A. Reflectivity modeling of Si-based amorphous superlattices [Internet]. Superlattices and Microstructures. 2000 ; 28( 3): 207-215.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.2000.0902
Vancouver
Zeballos-Velasquez EL, Moncada L H, Fantini MC de A. Reflectivity modeling of Si-based amorphous superlattices [Internet]. Superlattices and Microstructures. 2000 ; 28( 3): 207-215.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.2000.0902
Artigo de periodico
Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates (1999)
Tabata, A.; Martini, S.; Quivy, A. A.; Ceschin, Artemis Marti; Leite, J. R.
Source: Superlattices and Microstructures. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
TABATA, A. et al. Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates. Superlattices and Microstructures, v. 25, n. 1/2, p. 405-411, 1999Tradução . . Disponível em: https://doi.org/10.1006/spmi.1998.0667. Acesso em: 02 nov. 2025.
APA
Tabata, A., Martini, S., Quivy, A. A., Ceschin, A. M., & Leite, J. R. (1999). Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates. Superlattices and Microstructures, 25( 1/2), 405-411. doi:10.1006/spmi.1998.0667
NLM
Tabata A, Martini S, Quivy AA, Ceschin AM, Leite JR. Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates [Internet]. Superlattices and Microstructures. 1999 ; 25( 1/2): 405-411.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1998.0667
Vancouver
Tabata A, Martini S, Quivy AA, Ceschin AM, Leite JR. Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates [Internet]. Superlattices and Microstructures. 1999 ; 25( 1/2): 405-411.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1998.0667
Artigo de periodico
Commensurability oscillations in a stripe-shaped two-dimensional electron gas (1999)
Santos, Marcelo Trindade dos; Gusev, Guennadii Michailovich; Leite, J. R.; Bykov, A. A.; Moshegov, N. T.; Kudryashev, V. M.; Toporov, A. I.; Nataushev, Y. V.
Source: Superlattices and Microstructures. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
SANTOS, Marcelo Trindade dos et al. Commensurability oscillations in a stripe-shaped two-dimensional electron gas. Superlattices and Microstructures, v. 24, n. 1/2, p. 167-173, 1999Tradução . . Disponível em: https://doi.org/10.1006/spmi.1998.0632. Acesso em: 02 nov. 2025.
APA
Santos, M. T. dos, Gusev, G. M., Leite, J. R., Bykov, A. A., Moshegov, N. T., Kudryashev, V. M., et al. (1999). Commensurability oscillations in a stripe-shaped two-dimensional electron gas. Superlattices and Microstructures, 24( 1/2), 167-173. doi:10.1006/spmi.1998.0632
NLM
Santos MT dos, Gusev GM, Leite JR, Bykov AA, Moshegov NT, Kudryashev VM, Toporov AI, Nataushev YV. Commensurability oscillations in a stripe-shaped two-dimensional electron gas [Internet]. Superlattices and Microstructures. 1999 ; 24( 1/2): 167-173.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1998.0632
Vancouver
Santos MT dos, Gusev GM, Leite JR, Bykov AA, Moshegov NT, Kudryashev VM, Toporov AI, Nataushev YV. Commensurability oscillations in a stripe-shaped two-dimensional electron gas [Internet]. Superlattices and Microstructures. 1999 ; 24( 1/2): 167-173.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1998.0632
Artigo de periodico
Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon (1999)
Rosa, A. L.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Sipahi, Guilherme Matos
Source: Superlattices and Microstructures. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
ROSA, A. L. et al. Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon. Superlattices and Microstructures, v. 25, n. 1/2, p. 67-71, 1999Tradução . . Acesso em: 02 nov. 2025.
APA
Rosa, A. L., Scolfaro, L. M. R., Leite, J. R., & Sipahi, G. M. (1999). Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon. Superlattices and Microstructures, 25( 1/2), 67-71.
NLM
Rosa AL, Scolfaro LMR, Leite JR, Sipahi GM. Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon. Superlattices and Microstructures. 1999 ; 25( 1/2): 67-71.[citado 2025 nov. 02 ]
Vancouver
Rosa AL, Scolfaro LMR, Leite JR, Sipahi GM. Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon. Superlattices and Microstructures. 1999 ; 25( 1/2): 67-71.[citado 2025 nov. 02 ]
Artigo de periodico
Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells (1999)
Choque, N. M. S.; Beliaev, D.; Soares, J. A. N. T.; Scolfaro, Luisa Maria Ribeiro; Sperandio, A. L.; Quivy, A. A.; Leite, J. R.
Source: Superlattices and Microstructures. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
CHOQUE, N. M. S. et al. Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells. Superlattices and Microstructures, v. 26, n. 4, p. 243-250, 1999Tradução . . Disponível em: https://doi.org/10.1006/spmi.1999.0770. Acesso em: 02 nov. 2025.
APA
Choque, N. M. S., Beliaev, D., Soares, J. A. N. T., Scolfaro, L. M. R., Sperandio, A. L., Quivy, A. A., & Leite, J. R. (1999). Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells. Superlattices and Microstructures, 26( 4), 243-250. doi:10.1006/spmi.1999.0770
NLM
Choque NMS, Beliaev D, Soares JANT, Scolfaro LMR, Sperandio AL, Quivy AA, Leite JR. Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells [Internet]. Superlattices and Microstructures. 1999 ; 26( 4): 243-250.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1999.0770
Vancouver
Choque NMS, Beliaev D, Soares JANT, Scolfaro LMR, Sperandio AL, Quivy AA, Leite JR. Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells [Internet]. Superlattices and Microstructures. 1999 ; 26( 4): 243-250.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1999.0770
Artigo de periodico
Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers (1998)
Levine, Alexandre ; Silva, E C F da; Scolfaro, L M R; Beliaev, D; Quivy, A. A.; Enderlein, R; Leite, J. R.
Source: Superlattices and Microstructures. Unidade: IF
Subjects: MATÉRIA CONDENSADA, QUÍMICA
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ABNT
LEVINE, Alexandre et al. Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers. Superlattices and Microstructures, v. 23, n. 2, p. 301-306, 1998Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/67d287aa-b1d5-4f32-b25b-33bb9ed40ccd/1-s2.0-S0749603696999929-main.pdf. Acesso em: 02 nov. 2025.
APA
Levine, A., Silva, E. C. F. da, Scolfaro, L. M. R., Beliaev, D., Quivy, A. A., Enderlein, R., & Leite, J. R. (1998). Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers. Superlattices and Microstructures, 23( 2), 301-306. Recuperado de https://repositorio.usp.br/directbitstream/67d287aa-b1d5-4f32-b25b-33bb9ed40ccd/1-s2.0-S0749603696999929-main.pdf
NLM
Levine A, Silva ECF da, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers [Internet]. Superlattices and Microstructures. 1998 ; 23( 2): 301-306.[citado 2025 nov. 02 ] Available from: https://repositorio.usp.br/directbitstream/67d287aa-b1d5-4f32-b25b-33bb9ed40ccd/1-s2.0-S0749603696999929-main.pdf
Vancouver
Levine A, Silva ECF da, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers [Internet]. Superlattices and Microstructures. 1998 ; 23( 2): 301-306.[citado 2025 nov. 02 ] Available from: https://repositorio.usp.br/directbitstream/67d287aa-b1d5-4f32-b25b-33bb9ed40ccd/1-s2.0-S0749603696999929-main.pdf
Artigo de periodico
Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates (1998)
González-Borrero, Pedro Pablo; Lubyshev, D I; Marega Junior, Euclydes ; Petitprez, E; Basmaji, Pierre
Source: Superlattices and Microstructures. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
GONZÁLEZ-BORRERO, Pedro Pablo et al. Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates. Superlattices and Microstructures, v. 23, n. 2, p. 365-368, 1998Tradução . . Disponível em: https://doi.org/10.1006/spmi.1996.0353. Acesso em: 02 nov. 2025.
APA
González-Borrero, P. P., Lubyshev, D. I., Marega Junior, E., Petitprez, E., & Basmaji, P. (1998). Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates. Superlattices and Microstructures, 23( 2), 365-368. doi:10.1006/spmi.1996.0353
NLM
González-Borrero PP, Lubyshev DI, Marega Junior E, Petitprez E, Basmaji P. Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates [Internet]. Superlattices and Microstructures. 1998 ; 23( 2): 365-368.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1996.0353
Vancouver
González-Borrero PP, Lubyshev DI, Marega Junior E, Petitprez E, Basmaji P. Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates [Internet]. Superlattices and Microstructures. 1998 ; 23( 2): 365-368.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1996.0353
Artigo de periodico
Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates (1997)
González-Borrero, P P; Marega Junior, Euclydes ; Lubyshev, D I; Petitprez, E; Basmaji, Pierre
Source: Superlattices and Microstructures. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GONZÁLEZ-BORRERO, P P et al. Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures, v. 22, n. 1 , p. 85-89, 1997Tradução . . Acesso em: 02 nov. 2025.
APA
González-Borrero, P. P., Marega Junior, E., Lubyshev, D. I., Petitprez, E., & Basmaji, P. (1997). Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures, 22( 1 ), 85-89.
NLM
González-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures. 1997 ; 22( 1 ): 85-89.[citado 2025 nov. 02 ]
Vancouver
González-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures. 1997 ; 22( 1 ): 85-89.[citado 2025 nov. 02 ]
Artigo de periodico
Exchange and correlation effects in a semiconductor quantum-well wire (1995)
Campos, V B; Degani, Marcos Henrique; Hipólito, Oscar
Source: Superlattices and Microstructures. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), MATÉRIA CONDENSADA
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ABNT
CAMPOS, V B e DEGANI, Marcos Henrique e HIPÓLITO, Oscar. Exchange and correlation effects in a semiconductor quantum-well wire. Superlattices and Microstructures, v. 17, n. 1 , p. 85-90, 1995Tradução . . Disponível em: https://doi.org/10.1006/spmi.1995.1018. Acesso em: 02 nov. 2025.
APA
Campos, V. B., Degani, M. H., & Hipólito, O. (1995). Exchange and correlation effects in a semiconductor quantum-well wire. Superlattices and Microstructures, 17( 1 ), 85-90. doi:10.1006/spmi.1995.1018
NLM
Campos VB, Degani MH, Hipólito O. Exchange and correlation effects in a semiconductor quantum-well wire [Internet]. Superlattices and Microstructures. 1995 ;17( 1 ): 85-90.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1995.1018
Vancouver
Campos VB, Degani MH, Hipólito O. Exchange and correlation effects in a semiconductor quantum-well wire [Internet]. Superlattices and Microstructures. 1995 ;17( 1 ): 85-90.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1995.1018
Artigo de periodico
Localization of electronic states in semiconductor superlattices (1995)
Waki, M; Watari, K.
Source: Superlattices and Microstructures. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
WAKI, M e WATARI, K. Localization of electronic states in semiconductor superlattices. Superlattices and Microstructures, v. 17, n. 1 , p. 111-5, 1995Tradução . . Disponível em: https://doi.org/10.1006/spmi.1995.1022. Acesso em: 02 nov. 2025.
APA
Waki, M., & Watari, K. (1995). Localization of electronic states in semiconductor superlattices. Superlattices and Microstructures, 17( 1 ), 111-5. doi:10.1006/spmi.1995.1022
NLM
Waki M, Watari K. Localization of electronic states in semiconductor superlattices [Internet]. Superlattices and Microstructures. 1995 ;17( 1 ): 111-5.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1995.1022
Vancouver
Waki M, Watari K. Localization of electronic states in semiconductor superlattices [Internet]. Superlattices and Microstructures. 1995 ;17( 1 ): 111-5.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1995.1022
Artigo de periodico
Random magnetic field and weak localization effects in a dimpled 2d electron gas (1995)
Gusev, G M; Gennser, U; Kleber, X; Maude, D K; Portal, J C; Lubyshev, D I; Basmaji, Pierre; Silva, Marcelo de Assumpção Pereira da ; Rossi, J C; Nastaushev, Y V
Source: Superlattices and Microstructures. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Random magnetic field and weak localization effects in a dimpled 2d electron gas. Superlattices and Microstructures, v. 18, n. 1 , p. 67-73, 1995Tradução . . Disponível em: https://doi.org/10.1006/spmi.1995.1089. Acesso em: 02 nov. 2025.
APA
Gusev, G. M., Gennser, U., Kleber, X., Maude, D. K., Portal, J. C., Lubyshev, D. I., et al. (1995). Random magnetic field and weak localization effects in a dimpled 2d electron gas. Superlattices and Microstructures, 18( 1 ), 67-73. doi:10.1006/spmi.1995.1089
NLM
Gusev GM, Gennser U, Kleber X, Maude DK, Portal JC, Lubyshev DI, Basmaji P, Silva M de AP da, Rossi JC, Nastaushev YV. Random magnetic field and weak localization effects in a dimpled 2d electron gas [Internet]. Superlattices and Microstructures. 1995 ;18( 1 ): 67-73.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1995.1089
Vancouver
Gusev GM, Gennser U, Kleber X, Maude DK, Portal JC, Lubyshev DI, Basmaji P, Silva M de AP da, Rossi JC, Nastaushev YV. Random magnetic field and weak localization effects in a dimpled 2d electron gas [Internet]. Superlattices and Microstructures. 1995 ;18( 1 ): 67-73.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1995.1089
Artigo de periodico
Evidence of localized luminescence centers in porous silicon (1995)
Basmaji, Pierre; Matvienko, B; Guimarães, Francisco Eduardo Gontijo
Source: Superlattices and Microstructures. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre e MATVIENKO, B e GUIMARÃES, Francisco Eduardo Gontijo. Evidence of localized luminescence centers in porous silicon. Superlattices and Microstructures, v. 17, n. 2 , p. 155-157, 1995Tradução . . Disponível em: https://doi.org/10.1006/spmi.1995.1030. Acesso em: 02 nov. 2025.
APA
Basmaji, P., Matvienko, B., & Guimarães, F. E. G. (1995). Evidence of localized luminescence centers in porous silicon. Superlattices and Microstructures, 17( 2 ), 155-157. doi:10.1006/spmi.1995.1030
NLM
Basmaji P, Matvienko B, Guimarães FEG. Evidence of localized luminescence centers in porous silicon [Internet]. Superlattices and Microstructures. 1995 ; 17( 2 ): 155-157.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1995.1030
Vancouver
Basmaji P, Matvienko B, Guimarães FEG. Evidence of localized luminescence centers in porous silicon [Internet]. Superlattices and Microstructures. 1995 ; 17( 2 ): 155-157.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1995.1030
Artigo de periodico
Effect of alloy disorder and structural defects on excitonic properties in (100)-and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells (1994)
Guimarães, Francisco Eduardo Gontijo ; Lubyshev, D I; Chitta, Valmir Antonio ; Basmaji, Pierre
Source: Superlattices and Microstructures. Unidade: IFSC
Subjects: CIRCUITOS ELETRÔNICOS, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Effect of alloy disorder and structural defects on excitonic properties in (100)-and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells. Superlattices and Microstructures, v. 15, n. 3 , p. 361-5, 1994Tradução . . Acesso em: 02 nov. 2025.
APA
Guimarães, F. E. G., Lubyshev, D. I., Chitta, V. A., & Basmaji, P. (1994). Effect of alloy disorder and structural defects on excitonic properties in (100)-and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells. Superlattices and Microstructures, 15( 3 ), 361-5.
NLM
Guimarães FEG, Lubyshev DI, Chitta VA, Basmaji P. Effect of alloy disorder and structural defects on excitonic properties in (100)-and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells. Superlattices and Microstructures. 1994 ;15( 3 ): 361-5.[citado 2025 nov. 02 ]
Vancouver
Guimarães FEG, Lubyshev DI, Chitta VA, Basmaji P. Effect of alloy disorder and structural defects on excitonic properties in (100)-and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells. Superlattices and Microstructures. 1994 ;15( 3 ): 361-5.[citado 2025 nov. 02 ]
Artigo de periodico
Photo and electroreflectance spectra from spatially inhomogeneous heterostructures calculated by means of a new method (1994)
Beliaev, D; Enderlein, R; Soares, J A N T; Scolfaro, L M R; Ceschin, A M; Quivy, A. A.; Leite, J. R.
Source: Superlattices and Microstructures. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELIAEV, D et al. Photo and electroreflectance spectra from spatially inhomogeneous heterostructures calculated by means of a new method. Superlattices and Microstructures, v. 15, n. 3 , p. 339-43, 1994Tradução . . Disponível em: https://doi.org/10.1006/spmi.1994.1066. Acesso em: 02 nov. 2025.
APA
Beliaev, D., Enderlein, R., Soares, J. A. N. T., Scolfaro, L. M. R., Ceschin, A. M., Quivy, A. A., & Leite, J. R. (1994). Photo and electroreflectance spectra from spatially inhomogeneous heterostructures calculated by means of a new method. Superlattices and Microstructures, 15( 3 ), 339-43. doi:10.1006/spmi.1994.1066
NLM
Beliaev D, Enderlein R, Soares JANT, Scolfaro LMR, Ceschin AM, Quivy AA, Leite JR. Photo and electroreflectance spectra from spatially inhomogeneous heterostructures calculated by means of a new method [Internet]. Superlattices and Microstructures. 1994 ;15( 3 ): 339-43.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1994.1066
Vancouver
Beliaev D, Enderlein R, Soares JANT, Scolfaro LMR, Ceschin AM, Quivy AA, Leite JR. Photo and electroreflectance spectra from spatially inhomogeneous heterostructures calculated by means of a new method [Internet]. Superlattices and Microstructures. 1994 ;15( 3 ): 339-43.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1994.1066

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