Almeida, Luciano Mendes; Sasaki, Kátia Regina Akemi; Caillat, Christian; Aoulaiche, Marc; Collaert, Nadine 
; Jurczak, Malgorzata; Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Source: Solid-State Electronics Volume 90, December 2013, Pages 149-154. Unidade: EP
Assunto: SIMULAÇÃO
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ALMEIDA, Luciano Mendes et al. Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM. Solid-State Electronics Volume 90, December 2013, Pages 149-154, v. 90, p. 149-154, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2013.02.038. Acesso em: 27 abr. 2026.APA
Almeida, L. M., Sasaki, K. R. A., Caillat, C., Aoulaiche, M., Collaert, N., Jurczak, M., et al. (2013). Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM. Solid-State Electronics Volume 90, December 2013, Pages 149-154, 90, 149-154. doi:10.1016/j.sse.2013.02.038NLM
Almeida LM, Sasaki KRA, Caillat C, Aoulaiche M, Collaert N, Jurczak M, Simoen E, Claeys C, Martino JA. Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 149-154. 2013 ; 90 149-154.[citado 2026 abr. 27 ] Available from: https://doi.org/10.1016/j.sse.2013.02.038Vancouver
Almeida LM, Sasaki KRA, Caillat C, Aoulaiche M, Collaert N, Jurczak M, Simoen E, Claeys C, Martino JA. Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 149-154. 2013 ; 90 149-154.[citado 2026 abr. 27 ] Available from: https://doi.org/10.1016/j.sse.2013.02.038
